PIXEL COMPENSATION CIRCUIT AND MANUFACTURING METHOD THEREOF, OLED ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

    公开(公告)号:US20210265439A1

    公开(公告)日:2021-08-26

    申请号:US17255866

    申请日:2020-04-10

    Abstract: The present disclosure provides a pixel compensation circuit and a manufacturing method thereof, an OLED array substrate and a manufacturing method thereof, and a display device. The pixel compensation circuit includes a first TFT and a second TFT on a substrate. The first TFT includes: a first electrode on the substrate, a first interlayer dielectric layer on a side of the first electrode away from the substrate and having an opening exposing at least a portion of the first electrode; a second electrode on a side of the first interlayer dielectric layer away from the first electrode; and an active layer extending from the second electrode to the first electrode. The second TFT includes: an active layer on the substrate; and a first electrode and a second electrode in a same layer and on a side of the active layer of the second TFT away from the substrate.

    THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE, AND DISPLAY DEVICE

    公开(公告)号:US20210193700A1

    公开(公告)日:2021-06-24

    申请号:US16077777

    申请日:2017-12-13

    Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The thin film transistor includes a gate, a source, a drain, and an active layer. Forming the active layer includes: forming a pattern comprising a thermal insulation layer; forming a pattern comprising an amorphous silicon layer on the thermal insulation layer, wherein the pattern comprising the amorphous silicon layer includes a first portion on the thermal insulation layer and a second portion extending beyond the thermal insulation layer; and treating the pattern comprising the amorphous silicon layer with a laser annealing process, so that the amorphous silicon layer grows grain in a direction from the second portion to the first portion to form the active layer from polycrystalline silicon.

    DISPLAY PANEL, PREPARING METHOD THEREOF, AND DISPLAY DEVICE

    公开(公告)号:US20210025768A1

    公开(公告)日:2021-01-28

    申请号:US16832567

    申请日:2020-03-27

    Abstract: The present disclosure relates to the field of display technologies, and discloses a display panel, a preparing method thereof, and a display device. The display panel has a bending area, and the display panel includes a sensing component; the sensing component includes a differential bridge connection circuit composed of a first strain sensor, a second strain sensor, a third strain sensor, and a fourth strain sensor; the first strain sensor, the second strain sensor, the third strain sensor, and the fourth strain sensor are resistance transducers, and are located in the bending area; the first strain sensor and the fourth strain sensor constitute first opposite bridge arms; the second strain sensor and the third strain sensor constitute second opposite bridge arms, and the first opposite bridge arms and the second opposite bridge arms are separately located on two sides of a neutral layer of the display panel.

    STRUCTURED LIGHT GENERATOR
    35.
    发明申请

    公开(公告)号:US20200233124A1

    公开(公告)日:2020-07-23

    申请号:US16527751

    申请日:2019-07-31

    Abstract: The present disclosure provides a structured light generator. The structured light generator includes a transparent substrate, a plurality of transflective structure layers disposed on one side of the transparent substrate and mutually laminated and parallel, wherein distances between any two adjacent transflective structure layers are equal and 0.1λ to 10λ, λ being a wavelength of incident light, and a transparent filling layer disposed between any two adjacent transflective structure layers.

    DISPLAY PANEL, METHOD OF DRIVING THE SAME, AND DISPLAY APPARATUS

    公开(公告)号:US20190392768A1

    公开(公告)日:2019-12-26

    申请号:US16436238

    申请日:2019-06-10

    Abstract: The present application provides a display panel, a method of driving the same and a display apparatus. The display panel has pixel regions, each of which has pixel structures. Each of the pixel structures includes an anode, a cathode and a light emitting layer. The display panel further includes a controller and power signal lines coupled to the controller. Cathodes or anodes in a same pixel region are coupled to a same power signal line. The controller is configured to control a duty cycle of a control signal input to a power signal line coupled to a pixel region in response to a motion picture being displayed in the pixel region.

    TRANSPARENT DISPLAY PANEL AND TRANSPARENT DISPLAY DEVICE

    公开(公告)号:US20190086714A1

    公开(公告)日:2019-03-21

    申请号:US16009536

    申请日:2018-06-15

    Inventor: Wei QIN Xiaolong LI

    Abstract: A transparent display panel is provided, including a liquid crystal cell, a chromic material and a trigger component. The liquid crystal cell includes an array substrate and a first transparent substrate disposed opposite each other. A liquid crystal layer is arranged between the array substrate and the first transparent substrate. The chromic material is arranged at a side of the first transparent substrate away from the array substrate. The trigger component is connected to the chromic material for enabling the chromic material to perform a reversible change between a transparent state and a colored state.

    Method for Manufacturing Thin Film Transistor

    公开(公告)号:US20190027587A1

    公开(公告)日:2019-01-24

    申请号:US15989773

    申请日:2018-05-25

    Abstract: The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.

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