公开(公告)号：US20190212656A1

公开(公告)日：2019-07-11

申请号：US16244381

申请日：2019-01-10

Applicant: Applied Materials, Inc. ,  International Business Machines Corporation

Inventor： Huixiong Dai ,  Weimin Zeng ,  Daniel Lee Diehl ,  Yong Cao ,  Hsiang Ning Wu ,  Khoi Phan ,  Christopher S. Ngai ,  Mingwei Zhu ,  Michael Stolfi ,  Nelson M. Felix ,  Ekmini Anuja DeSilva ,  Xianmin Tang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70058 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/70033

Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.

公开(公告)号：US20190172973A1

公开(公告)日：2019-06-06

申请号：US16265895

申请日：2019-02-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/32 ,  H01L33/00 ,  H01L31/18 ,  H01J37/34 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20180135183A1

公开(公告)日：2018-05-17

申请号：US15806500

申请日：2017-11-08

Applicant: Applied Materials, Inc.

Inventor： Weimin Zeng ,  Yong Cao ,  Daniel Lee Diehl ,  Khoi Phan ,  Huixiong Dai ,  Christopher S. Ngai

IPC: C23C16/56 ,  C23C16/455 ,  G03F1/22

CPC classification number: C23C16/56 ,  C23C14/06 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/0272 ,  C23C16/455 ,  G03F1/22

Abstract: Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.

公开(公告)号：US09633839B2

公开(公告)日：2017-04-25

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yana Cheng ,  Yong Cao ,  Daniel Lee Diehl ,  Srinivas Guggilla ,  Rongjun Wang ,  Xianmin Tang

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.