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    Semiconductor device
    31.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20090212398A1

    公开(公告)日：2009-08-27

    申请号：US12379574

    申请日：2009-02-25

    申请人： Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomohiko Sagimori ,  Tomoki Igari ,  Hironori Furuta ,  Yusuke Nakai ,  Mitutsuhiko Ogihara

    发明人： Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomohiko Sagimori ,  Tomoki Igari ,  Hironori Furuta ,  Yusuke Nakai ,  Mitutsuhiko Ogihara

    IPC分类号： H01L23/34

    CPC分类号： H01L33/12 ,  H01L23/145 ,  H01L23/3735 ,  H01L33/20 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.

    摘要翻译： 在半导体器件中的塑料基板上形成薄膜半导体元件。 在薄膜半导体元件和塑料基板之间插入热膨胀缓冲层。 尽管薄膜半导体元件由具有与塑料基板的热膨胀系数不同的热膨胀系数的材料制成，但介于薄膜半导体元件和塑料基板之间的热膨胀缓冲层保护薄膜 半导体元件由于不同的热膨胀系数而在器件制造过程中由机械应力引起的损坏，使半导体器件能够可靠地工作。

    METHOD FOR MANUFACTURING LIGHT TRANSMISSIVE FILM, ACTIVE ENERGY RAY-CURABLE COMPOSITION, AND LIGHT TRANSMISSIVE FILM
    35.
    发明申请
    METHOD FOR MANUFACTURING LIGHT TRANSMISSIVE FILM, ACTIVE ENERGY RAY-CURABLE COMPOSITION, AND LIGHT TRANSMISSIVE FILM 有权
    光传输薄膜的制造方法，活性能量可固化组合物和光透射膜

    公开(公告)号：US20130277881A1

    公开(公告)日：2013-10-24

    申请号：US13976193

    申请日：2011-12-28

    申请人： Satoru Ozawa ,  Katsuhiro Kojima ,  Yusuke Nakai ,  Hiroshi Onomoto

    发明人： Satoru Ozawa ,  Katsuhiro Kojima ,  Yusuke Nakai ,  Hiroshi Onomoto

    IPC分类号： C08K5/521 ,  B29C59/04 ,  B29C43/00 ,  B29C43/28

    CPC分类号： B29C43/003 ,  B29C33/60 ,  B29C39/148 ,  B29C39/18 ,  B29C43/28 ,  B29C59/04 ,  C08K5/521

    摘要： A method for manufacturing a light transmissive film having a cured resin layer with a fine concavo-convex structure on a surface of a base material film is provided. The method includes sandwiching an active energy ray-curable composition including a mold dissolving component between a mold having an inversion structure of the fine concavo-convex structure and the base material film, obtaining a light transmissive film in which a cured resin layer having the inversion structure of the mold transferred is formed on one surface of the base material film, and separating the obtained light transmissive film and the mold. Thus, it is possible to productively manufacture a light transmissive film, and to prevent the deposition of an attachment on the mold surface and the contamination of the mold surface. Moreover, a light transmissive film can be manufactured having excellent performances, such as antireflection properties.

    摘要翻译： 提供了在基材膜的表面上制造具有微细凹凸结构的固化树脂层的透光膜的方法。 该方法包括将具有模具溶解成分的活性能量射线固化性组合物夹在具有微细凹凸结构的反转结构的模具和基材膜之间，得到透光膜，其中具有反转的固化树脂层 转印模具的结构形成在基材薄膜的一个表面上，并分离所得的透光膜和模具。 因此，可以有效地制造透光膜，并且防止附着在模具表面上的沉积和模具表面的污染。 此外，可以制造具有优异性能的透光膜，例如抗反射性能。

    Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face
    37.
    发明授权
    Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face 有权
    通过在不产生垂直面的情况下水平蚀刻半导体衬底来制造方法

    公开(公告)号：US07947576B2

    公开(公告)日：2011-05-24

    申请号：US12401754

    申请日：2009-03-11

    申请人： Tomoki Igari ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Hironori Furuta ,  Takahito Suzuki ,  Tomohiko Sagimori ,  Yusuke Nakai

    发明人： Tomoki Igari ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Hironori Furuta ,  Takahito Suzuki ,  Tomohiko Sagimori ,  Yusuke Nakai

    IPC分类号： H01L21/20

    CPC分类号： H01L33/0095 ,  H01L33/0079

    摘要： An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

    摘要翻译： 本发明的一个方面提供一种制造半导体元件的方法的方法，包括以下步骤：在半导体衬底的顶部上外延生长半导体层; 通过在生长的半导体层的顶部上的图案化工艺形成图案来形成生长的半导体层的图案化部分; 通过第一蚀刻方法用第一蚀刻剂除去图案化部分以外的半导体层的一部分; 以及将第一蚀刻方法的结果浸入通过第二蚀刻方法仅蚀刻半导体衬底的第二蚀刻剂，从而从半导体层移除衬底。