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135 条记录 (耗时 0.026 秒)

    X-ray detectors including diffusion barrier films
    32.
    发明授权
    X-ray detectors including diffusion barrier films 有权
    X射线探测器包括扩散阻挡膜

    公开(公告)号：US08766202B2

    公开(公告)日：2014-07-01

    申请号：US13247512

    申请日：2011-09-28

    申请人： Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    IPC分类号： G01T1/24 ,  H04N5/32

    CPC分类号： H01L27/14659 ,  H01L27/14632 ,  H01L27/14676

    摘要： An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

    摘要翻译： X射线检测器包括光电导体，在感光体的第一表面上的第一扩散阻挡膜，第一扩散阻挡膜上的至少一个像素电极，用于处理从至少一个像素输出的电信号的信号发送单元 电极和与光电导体的第一表面相对的光电导体的第二表面上的公共电极。

    Thin film transistor and method of forming the same
    33.
    发明授权
    Thin film transistor and method of forming the same 有权
    薄膜晶体管及其形成方法

    公开(公告)号：US08614442B2

    公开(公告)日：2013-12-24

    申请号：US12929818

    申请日：2011-02-17

    申请人： Jae-chul Park ,  Young-soo Park ,  Sun-Il Kim

    发明人： Jae-chul Park ,  Young-soo Park ,  Sun-Il Kim

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869 ,  H01L29/78609

    摘要： A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

    摘要翻译： 薄膜晶体管（TFT）可以包括沟道层，源电极，漏电极，保护层，栅电极和/或栅极绝缘层。 沟道层可以包括氧化物半导体材料。 源电极和漏电极可以在沟道层上彼此面对。 保护层可以在源极和漏极之下，和/或可以覆盖沟道层。 栅电极可以被配置为向沟道层施加电场。 栅极绝缘层可以插入在栅电极和沟道层之间。

    Thin film transistors having multi-layer channel
    34.
    发明授权
    Thin film transistors having multi-layer channel 有权
    具有多层通道的薄膜晶体管

    公开(公告)号：US08558323B2

    公开(公告)日：2013-10-15

    申请号：US12923472

    申请日：2010-09-23

    申请人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    发明人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.

    摘要翻译： 晶体管可以包括：栅极绝缘层，形成在栅极绝缘层的底侧的栅电极，形成在栅极绝缘层的顶侧的沟道层，源极与沟道层的第一部分接触 以及与沟道层的第二部分接触的漏电极。 沟道层可以具有双层结构，包括上层和下层。 上层可以具有低于下层的载流子浓度。 上层可以掺杂载体受体以使电阻高于下层的电阻。

    Transistors, electronic devices including a transistor and methods of manufacturing the same
    36.
    发明授权
    Transistors, electronic devices including a transistor and methods of manufacturing the same 有权
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US08410479B2

    公开(公告)日：2013-04-02

    申请号：US12805110

    申请日：2010-07-13

    申请人： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    发明人： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions.

    摘要翻译： 提供晶体管，包括晶体管的电子器件及其制造方法，晶体管包括具有在一个方向上变化的组成的氧化物半导体层（作为沟道层）。 沟道层可以是包括作为金属元素的第一元素，第二元素和Zn的氧化物层。 第一元件，第二元件和Zn中的至少一个的量可以在沟道层的沉积方向上改变。 第一元素可以是铪（Hf），钇（Y），钽（Ta），锆（Zr），镓（Ga），铝（Al）或其组合中的任一种。 第二元素可以是铟（In）。 沟道层可以具有包括具有不同组成的至少两层的多层结构。

    X-Ray Detectors Including Diffusion Barrier Films
    38.
    发明申请
    X-Ray Detectors Including Diffusion Barrier Films 有权
    包括扩散阻挡膜的X射线探测器

    公开(公告)号：US20120211663A1

    公开(公告)日：2012-08-23

    申请号：US13247512

    申请日：2011-09-28

    申请人： Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    IPC分类号： G01T1/24 ,  G01T1/16

    CPC分类号： H01L27/14659 ,  H01L27/14632 ,  H01L27/14676

    摘要： An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

    摘要翻译： X射线检测器包括光电导体，在感光体的第一表面上的第一扩散阻挡膜，第一扩散阻挡膜上的至少一个像素电极，用于处理从至少一个像素输出的电信号的信号发送单元 电极和与光电导体的第一表面相对的光电导体的第二表面上的公共电极。

    Thin film transistors having multi-layer channel
    39.
    发明授权
    Thin film transistors having multi-layer channel 有权
    具有多层通道的薄膜晶体管

    公开(公告)号：US08143678B2

    公开(公告)日：2012-03-27

    申请号：US11987499

    申请日：2007-11-30

    申请人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    发明人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer. The channel layer may have a double-layer structure, including upper and lower layers. The upper layer may have a carrier concentration lower than the lower layer. A method of manufacturing a transistor may include: forming a channel layer on a substrate; forming source and drain electrodes on the substrate; forming a gate insulating layer on the substrate; and forming a gate electrode on the gate insulating layer above the channel layer. A method of manufacturing a transistor may include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a channel layer on the gate insulating layer; and forming source and drain electrodes on the gate insulating layer.

    摘要翻译： 晶体管可以包括：栅极绝缘层; 形成在所述栅极绝缘层上的栅电极; 形成在所述栅极绝缘层上的沟道层; 以及与沟道层接触的源极和漏极。 沟道层可以具有双层结构，包括上层和下层。 上层可以具有低于下层的载流子浓度。 制造晶体管的方法可以包括：在衬底上形成沟道层; 在基板上形成源极和漏极; 在所述基板上形成栅极绝缘层; 以及在沟道层上方的栅极绝缘层上形成栅电极。 制造晶体管的方法可以包括：在衬底上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成沟道层; 以及在栅极绝缘层上形成源极和漏极。

    Inverter and logic device comprising the same
    40.
    发明授权
    Inverter and logic device comprising the same 有权
    逆变器和包括其的逻辑器件

    公开(公告)号：US08089301B2

    公开(公告)日：2012-01-03

    申请号：US12805402

    申请日：2010-07-29

    申请人： Sun-il Kim ,  Chang-jung Kim ,  Sang-wook Kim

    发明人： Sun-il Kim ,  Chang-jung Kim ,  Sang-wook Kim

    IPC分类号： H01L25/00 ,  H03K19/00

    CPC分类号： H03K19/09443 ,  H03K19/09407

    摘要： The inverter includes a driving transistor and a loading transistor having channel regions with different thicknesses. The channel region of the driving transistor may be thinner than the channel region of the load transistor. A channel layer of the driving transistor may have a recessed region between a source and a drain which contact both ends of the channel layer. The driving transistor may be an enhancement mode transistor and the load transistor may be a depletion mode transistor.

    摘要翻译： 逆变器包括驱动晶体管和具有不同厚度的沟道区的负载晶体管。 驱动晶体管的沟道区可以比负载晶体管的沟道区更薄。 驱动晶体管的沟道层可以在与沟道层的两端接触的源极和漏极之间具有凹陷区域。 驱动晶体管可以是增强型晶体管，负载晶体管可以是耗尽型晶体管。