Copolymer resin, preparation thereof, and photoresist using the same
    31.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 失效
    共聚物树脂及其制备方法和使用其的光致抗蚀剂

    公开(公告)号:US06372935B1

    公开(公告)日:2002-04-16

    申请号:US09861394

    申请日:2001-05-18

    IPC分类号: C07C6974

    摘要: The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbornyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbornyl group, and shows excellent resolution of 0.15 Fm in practical experiment of patterning.

    摘要翻译: 本发明涉及用于超短波光源如KrF或ArF的共聚物树脂,其制备方法和包含相同树脂的光致抗蚀剂。 由于将(甲基)丙烯酸降冰片酯单元引入到光致抗蚀剂共聚物的结构中,本发明的共聚物树脂通过常规的自由基聚合容易地制备。 该树脂在193nm波长处具有高透明度,由于降冰片基中的亲水性官能团而提供增强的耐蚀刻性和增强的粘合强度,并且在实际的图案化实验中显示出优异的分辨率为0.15Fm。

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same

    公开(公告)号:US06291131B1

    公开(公告)日:2001-09-18

    申请号:US09383547

    申请日:1999-08-26

    IPC分类号: G03F7004

    摘要: The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same
    33.
    发明授权
    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same 有权
    光致抗蚀剂交联单体,光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号:US06200731B1

    公开(公告)日:2001-03-13

    申请号:US09465112

    申请日:1999-12-16

    IPC分类号: G03C173

    摘要: The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

    摘要翻译: 本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体:<化学式1>其中V表示CH 2,CH 2 CH 2,氧或硫; Y选自直链或支链C 1-10烷基,氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

    Guider for spinal operation and cage therefor

    公开(公告)号:US11844701B2

    公开(公告)日:2023-12-19

    申请号:US17135663

    申请日:2020-12-28

    IPC分类号: A61F2/44 A61F2/46

    摘要: Proposed are a guider for a spinal operation and a cage therefor. The guider includes a sliding portion configured to guide a cage for a spinal operation and a holder to a surgical site, a head of the sliding portion being inserted into a human body region where a surgical incision is made for the spinal operation, and the cage for a spinal operation being combined with the holder; a support portion combined with one side of the sliding portion and thus supporting the sliding portion; and a handle combined with the support portion.

    Sheath device for biportal endoscopic spinal surgery

    公开(公告)号:US11457909B2

    公开(公告)日:2022-10-04

    申请号:US16763175

    申请日:2017-11-30

    发明人: Min Ho Jung

    IPC分类号: A61B17/02 A61B1/31 A61B17/34

    摘要: An endoscopic device for biportal endoscopic spinal surgery is proposed. The device includes: a guide tube as a hollow tubular member extending in a longitudinal direction and having a front end thereof reaching a target site in a patient's body when being used, the guide tube accommodating a probe of an endoscope inserted therein; a saline solution guide part mounted on a rear end of the guide tube and guiding a saline solution injected from an outside to an inside of the guide tube; and an adapter part positioned at the rear end of the guide tube and guiding the probe of the endoscope to use to the guide tube.

    Bar type ionizer
    36.
    发明申请
    Bar type ionizer 有权
    酒吧型离子发生器

    公开(公告)号:US20090103229A1

    公开(公告)日:2009-04-23

    申请号:US11918827

    申请日:2006-02-09

    IPC分类号: H05F3/04

    CPC分类号: H01T23/00

    摘要: A bar type ionizer has a discharging electrode, a ground electrode, a high voltage unit, and a controller unit and uses the technique of eliminating static electricity by corona discharging. The ionizer also has a FND unit mounted on the bar which lets the user see the bar information including address of the bar, frequency, duty rate, alarm, run/stop state easily, plus buttons that let the user control the bar information easily, an air supply device installed around the needles in the air injecting socket which sends air, and a second air supply device installed around the needles having round sections and sending air to the end of the needles to eliminate the dust attached on the end of the needles. The ionizer has a streamlined section so that inside air flows smoothly. The second air supply device is elliptic with the minor axis smaller than the radius of the needle. The needle is positioned at the center of this elliptic groove and fixed by it.

    摘要翻译: 棒式离子发生器具有放电电极,接地电极,高压单元和控制器单元,并且采用通过电晕放电消除静电的技术。 离子发生器还具有安装在棒上的FND单元,使用户可以轻松地查看包括条的地址,频率,占空比,报警,运行/停止状态的条形信息,以及允许用户轻松控制条形信息的按钮, 安装在空气喷射插座中的针周围的空气供应装置,以及安装在具有圆形部分的针周围的第二供气装置,并且将空气送到针的末端以消除附着在针的端部上的灰尘 。 电离器具有流线型部分,使得内部空气流畅地流动。 第二供气装置是椭圆形的,短轴小于针的半径。 针位于该椭圆槽的中心并由其固定。

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    37.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号:US07329477B2

    公开(公告)日:2008-02-12

    申请号:US10993869

    申请日:2004-11-19

    IPC分类号: G03F7/00 G03F7/004

    CPC分类号: G03F7/11 G03F7/0045

    摘要: The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译: 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地,本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF(248nm),ArF(193nm),F 2 N(157nm),电子束,离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线(EUV)。

    Organic polymer for anti-reflective coating layer and preparation thereof
    39.
    发明授权
    Organic polymer for anti-reflective coating layer and preparation thereof 失效
    用于抗反射涂层的有机聚合物及其制备方法

    公开(公告)号:US06780953B2

    公开(公告)日:2004-08-24

    申请号:US10293022

    申请日:2002-11-12

    IPC分类号: C08F22068

    摘要: The present invention provides a polymer that can be used as an anti-reflective coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

    摘要翻译: 本发明提供可用作抗反射涂层(ARC)聚合物的聚合物,包含其的ARC组合物,其制备方法及其使用方法。 本发明的聚合物在例如使用KrF(248nm)或ArF(193nm)激光器作为光源的亚微光刻工艺中特别有用。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此,本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此,本发明的聚合物可以用于制造适合于制造64M,256M,1G,4G和16G DRAM半导体器件的稳定超细晶格。 此外,本发明的ARC显着提高了这种半导体器件的生产成本。

    Polymer-containing photoresist, and process for manufacturing the same
    40.
    发明授权
    Polymer-containing photoresist, and process for manufacturing the same 有权
    含聚合物的光致抗蚀剂及其制造方法

    公开(公告)号:US06632903B2

    公开(公告)日:2003-10-14

    申请号:US09934369

    申请日:2001-08-21

    IPC分类号: C08F23200

    摘要: The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).

    摘要翻译: 本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。 作为具有亲水基团的降冰片烯衍生物(单体)合成并引入到聚合物的主链中,本发明的聚合物具有优异的耐蚀性和耐热性,这是脂环式烯烃结构的特征点,并提供 由于引入亲水基团(-OH)导致的粘合性的显着增强,优异的分辨率