公开(公告)号：US07150961B2

公开(公告)日：2006-12-19

申请号：US10789055

申请日：2004-02-27

申请人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

发明人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

公开(公告)号：US06956091B2

公开(公告)日：2005-10-18

申请号：US10438531

申请日：2003-05-14

申请人： Sung-eun Hong ,  Min-ho Jung ,  Ki-ho Baik

发明人： Sung-eun Hong ,  Min-ho Jung ,  Ki-ho Baik

IPC分类号： C07C317/22 ,  C07C303/28 ,  C07C309/73 ,  C08F2/06 ,  C08F4/04 ,  C08F4/34 ,  C08F20/38 ,  C08F20/58 ,  C08F220/38 ,  C09D5/00 ,  C09D133/14 ,  C09D163/00 ,  C08F124/00

CPC分类号： C08F20/58 ,  C07C303/28 ,  C07C309/73

摘要： The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers. Use of the anti-reflective coating of the present invention results in the stable formation of ultrafine patters suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield.The present invention also relates to anti-reflective coating compositions containing these polymers and to the anti-reflective coatings formed from these compositions, as well as preparation methods therefor.

摘要翻译： 本发明涉及一种适用于半光装置的有机抗反射涂层聚合物，其用于使用193nm ArF光束辐射形成超细纹图案的光刻方法及其制备方法。 本发明的抗反射涂层聚合物含有在193nm波长处具有高吸收性的侧基苯基的单体。 当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时，聚合物消除由上覆感光膜的厚度变化引起的驻波，通过下层的分光特性 晶片以及由于来自下层的衍射和反射光引起的CD变化。 使用本发明的抗反射涂层可以稳定地形成适用于64M，256M，1G，4G和16G DRAM半导体器件的超微图案，并且可以大大提高生产率。 本发明还涉及含有这些聚合物和由这些组合物形成的抗反射涂层的抗反射涂料组合物及其制备方法。

公开(公告)号：US06866984B2

公开(公告)日：2005-03-15

申请号：US10740962

申请日：2003-12-18

申请人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC分类号： C08F232/04 ,  G03F7/039 ,  G03F7/004

CPC分类号： G03F7/039 ,  C08F232/04

摘要： A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.

摘要翻译： 由一种或多种羧基取代的双环烯烃单体制备光致抗蚀剂共聚物，该共聚物用于制备使用深紫外（ArF）作为光源的亚微光刻工艺的光致抗蚀剂。 除了具有高耐蚀刻性和耐热性之外，光致抗蚀剂对基材具有良好的粘附性，并且可以在TMAH溶液中显影。

公开(公告)号：US06824951B2

公开(公告)日：2004-11-30

申请号：US09947625

申请日：2001-09-06

申请人： Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0395 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

摘要： A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.

摘要翻译： 用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。 当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基 。

公开(公告)号：US06811960B2

公开(公告)日：2004-11-02

申请号：US10436742

申请日：2003-05-12

申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0758 ,  C07F7/1804 ,  C08F30/08 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  C08F222/06 ,  C08F232/08 ,  C08F2222/1013

摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

摘要翻译： 本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光 特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06797451B2

公开(公告)日：2004-09-28

申请号：US10189056

申请日：2002-07-03

申请人： Sung Eun Hong ,  Min Ho Jung ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Ki Ho Baik

发明人： Sung Eun Hong ,  Min Ho Jung ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Ki Ho Baik

IPC分类号： G03C176

CPC分类号： C08F220/32 ,  G03F7/091 ,  Y10S430/111 ,  Y10S430/122

摘要： The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.

摘要翻译： 本发明提供下式的树脂：其中R1，R2，R3，x和y是本文定义的那些。 本发明还提供了在光致抗蚀剂图案形成工艺期间使用上述树脂抑制来自晶片衬底的下层的光的反射的方法。

公开(公告)号：US06630281B2

公开(公告)日：2003-10-07

申请号：US09902152

申请日：2001-07-10

申请人： Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

发明人： Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7038

CPC分类号： G03F7/0382 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/128

摘要： Photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS), and a process for forming a positive pattern according to the TIPS using the same. The photoresist composition for the TIPS comprises a cross-linker of following Formula 1 or 2. A protecting group of the cross-linker and a hydroxyl group of the photoresist polymer are selectively crosslinked in the exposed region, and the residual hydroxyl group reacts to a silylating agent in the non-exposed region by silylation. Thus, the non-exposed region only remains after the dry-development, thereby forming a positive pattern. In addition, the photoresist composition of the present invention is suitable for the TIPS lithography using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). wherein, R1, R2, R3, R4, R5, R6 and R7 are as defined in the specification.

摘要翻译： 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂组合物，以及根据使用其的TIPS形成阳性图案的方法。 用于TIPS的光致抗蚀剂组合物包含下式1或2的交联剂。交联剂的保护基团和光致抗蚀剂聚合物的羟基在暴露区域中选择性交联，并且残余的羟基与 通过甲硅烷基化在非暴露区域中的甲硅烷基化剂。 因此，未曝光区域仅在干显影之后保留，从而形成正图案。 另外，本发明的光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的TIPS光刻，其中R1，R2，R3，R4，R5 R6和R7如本说明书中所定义。

公开(公告)号：US06589707B2

公开(公告)日：2003-07-08

申请号：US09788181

申请日：2001-02-15

申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0758 ,  C07F7/1804 ,  C08F30/08 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  C08F222/06 ,  C08F232/08 ,  C08F2222/1013

摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

摘要翻译： 本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光 特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06492441B2

公开(公告)日：2002-12-10

申请号：US10015333

申请日：2001-12-11

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08K534

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在制造64M，256M，1G，4G和16G DRAM半导体器件期间的微小图案。

公开(公告)号：US06482565B1

公开(公告)日：2002-11-19

申请号：US09448964

申请日：1999-11-24

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： C07D407/12 ,  C07D317/12 ,  C07D319/06

摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.

摘要翻译： 本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。 根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物 酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮， 包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。