摘要:
An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.
摘要:
A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.
摘要:
A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
摘要:
A multi-mode filter for realizing wide-band is disclosed. The multi-mode filter includes a housing; a plurality of cavities formed in the housing; a plurality of resonators located in each of the cavities; at least one connector formed through a side wall of the housing; and at least one coupling element connected to the at least one connector in the cavities, the at least one coupling element coupling the at least one connector with at least one of the resonators respectively, wherein each of the at least one coupling element has “T” shape in view of front section and “L” shape in view of side section.
摘要:
A multi-mode filter for realizing wide band using capacitive coupling and inductive coupling and capable of tuning coupling value is disclosed. The multi-mode filter includes a housing; a first cavity and a second cavity formed in the housing; a first resonator located in the first cavity, a second resonator located in the second cavity, a wall configured to separate the first cavity from the second cavity; and a first coupling element, wherein a groove is formed between the housing and the wall, the first coupling element is inserted in the groove in crossing direction to the wall, one part of the first coupling element is disposed in the first cavity, another part of the first coupling element is disposed in the second cavity, and the first coupling element is connected to a ground.