公开(公告)号：US07746621B2

公开(公告)日：2010-06-29

申请号：US11918827

申请日：2006-02-09

申请人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

发明人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

IPC分类号： H05F3/00

CPC分类号： H01T23/00

摘要： A bar type ionizer has a discharging electrode, a ground electrode, a high voltage unit, and a controller unit and uses the technique of eliminating static electricity by corona discharging. The ionizer also has a FND unit mounted on the bar which lets the user see the bar information including address of the bar, frequency, duty rate, alarm, run/stop state easily, plus buttons that let the user control the bar information easily, an air supply device installed around the needles in the air injecting socket which sends air, and a second air supply device installed around the needles having round sections and sending air to the end of the needles to eliminate the dust attached on the end of the needles. The ionizer has a streamlined section so that inside air flows smoothly. The second air supply device is elliptic with the minor axis smaller than the radius of the needle. The needle is positioned at the center of this elliptic groove and fixed by it.

摘要翻译： 棒式离子发生器具有放电电极，接地电极，高压单元和控制器单元，并且采用通过电晕放电消除静电的技术。 离子发生器还具有安装在棒上的FND单元，使用户可以轻松地查看包括条的地址，频率，占空比，报警，运行/停止状态的条形信息，以及允许用户轻松控制条形信息的按钮， 安装在空气喷射插座中的针周围的空气供应装置，以及安装在具有圆形部分的针周围的第二供气装置，并且将空气送到针的末端以消除附着在针的端部上的灰尘 。 电离器具有流线型部分，使得内部空气流畅地流动。 第二供气装置是椭圆形的，短轴小于针的半径。 针位于该椭圆槽的中心并由其固定。

公开(公告)号：US20090103229A1

公开(公告)日：2009-04-23

申请号：US11918827

申请日：2006-02-09

申请人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

发明人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

IPC分类号： H05F3/04

CPC分类号： H01T23/00

摘要： A bar type ionizer has a discharging electrode, a ground electrode, a high voltage unit, and a controller unit and uses the technique of eliminating static electricity by corona discharging. The ionizer also has a FND unit mounted on the bar which lets the user see the bar information including address of the bar, frequency, duty rate, alarm, run/stop state easily, plus buttons that let the user control the bar information easily, an air supply device installed around the needles in the air injecting socket which sends air, and a second air supply device installed around the needles having round sections and sending air to the end of the needles to eliminate the dust attached on the end of the needles. The ionizer has a streamlined section so that inside air flows smoothly. The second air supply device is elliptic with the minor axis smaller than the radius of the needle. The needle is positioned at the center of this elliptic groove and fixed by it.

摘要翻译： 棒式离子发生器具有放电电极，接地电极，高压单元和控制器单元，并且采用通过电晕放电消除静电的技术。 离子发生器还具有安装在棒上的FND单元，使用户可以轻松地查看包括条的地址，频率，占空比，报警，运行/停止状态的条形信息，以及允许用户轻松控制条形信息的按钮， 安装在空气喷射插座中的针周围的空气供应装置，以及安装在具有圆形部分的针周围的第二供气装置，并且将空气送到针的末端以消除附着在针的端部上的灰尘 。 电离器具有流线型部分，使得内部空气流畅地流动。 第二供气装置是椭圆形的，短轴小于针的半径。 针位于该椭圆槽的中心并由其固定。

公开(公告)号：US20090067111A1

公开(公告)日：2009-03-12

申请号：US11918832

申请日：2005-10-18

申请人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung Han Shim

发明人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung Han Shim

IPC分类号： H05F3/04

CPC分类号： H01J35/18 ,  H01J35/16 ,  H01J2235/166 ,  H01J2235/168 ,  H01J2235/186 ,  H05F3/06

摘要： A flexible ionizer uses soft X-ray and has a head unit generating soft X-ray whose wavelength is 1.2˜1.5 Å, a soft X-ray protect unit shielding the leak of the soft X-ray from the head unit, and a power control unit supplying a control signal and control voltage to the head unit. The head unit is positioned outside of the soft X-ray protect unit with the flexible ionizer further having a flexible tube protecting a high voltage cable that connects the head unit and power control unit from external impact or vibration and letting the user bend the head of the head unit at an arbitrary angle toward a charged body if necessary, a connecting device letting the ions generated at the window positioned inside of the body of the ionizer emit toward the charged body by connecting one end of the flexible tube and the head unit, and a connecting device connecting the other end of the flexible tube and the body of the ionizer. The high voltage power lines in the flexible tube are molded to prevent short circuits occurring at a near distance between the high voltage power lines and mutual induction voltages occurring. The short circuit and the mutual induction voltage are caused by the mutual influence of the high voltage lines.

摘要翻译： 柔性电离器使用软X射线，并具有头部单元，其产生波长为1.2〜1.5的软X射线，该软X射线保护单元屏蔽来自头单元的软X射线的泄漏，以及功率 控制单元向头单元提供控制信号和控制电压。 头单元位于软X射线保护单元的外部，柔性电离器还具有柔性管，保护连接头单元和电源控制单元的高压电缆免受外部冲击或振动，并使用户弯曲头部 如果需要，头单元以任意角度朝向带电体，通过连接柔性管和头单元的一端，使位于离子发生器的主体内部的窗处产生的离子朝向带电体发射的连接装置， 以及将柔性管的另一端和离子发生器的主体连接的连接装置。 柔性管中的高压电力线被模制以防止在高压电力线之间的近距离处发生短路并且产生相互感应电压。 短路和互感电压是由高压线相互影响引起的。

公开(公告)号：US07710707B2

公开(公告)日：2010-05-04

申请号：US11918832

申请日：2005-10-18

申请人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

发明人： Yong-Chul Jung ,  Byung-Soo Lee ,  Min-Ho Jung ,  Chung-Han Shim

IPC分类号： H05F3/06 ,  H05F3/00

CPC分类号： H01J35/18 ,  H01J35/16 ,  H01J2235/166 ,  H01J2235/168 ,  H01J2235/186 ,  H05F3/06

摘要： A flexible ionizer uses soft X-ray and has a head unit generating soft X-ray whose wavelength is 1.2˜1.5 Å, a soft X-ray protect unit shielding the leak of the soft X-ray from the head unit, and a power control unit supplying a control signal and control voltage to the head unit. The head unit is positioned outside of the soft X-ray protect unit with the flexible ionizer further having a flexible tube protecting a high voltage cable that connects the head unit and power control unit from external impact or vibration and letting the user bend the head of the head unit at an arbitrary angle toward a charged body if necessary, a connecting device letting the ions generated at the window positioned inside of the body of the ionizer emit toward the charged body by connecting one end of the flexible tube and the head unit, and a connecting device connecting the other end of the flexible tube and the body of the ionizer. The high voltage power lines in the flexible tube are molded to prevent short circuits occurring at a near distance between the high voltage power lines and mutual induction voltages occurring. The short circuit and the mutual induction voltage are caused by the mutual influence of the high voltage lines.

摘要翻译： 柔性电离器使用软X射线，并具有头单元，其产生波长为1.2〜1.5的软X射线，软X射线保护单元屏蔽来自头单元的软X射线的泄漏，以及功率 控制单元向头单元提供控制信号和控制电压。 头单元位于软X射线保护单元的外部，柔性电离器还具有柔性管，保护连接头单元和电源控制单元的高压电缆免受外部冲击或振动，并使用户弯曲头部 如果需要，头单元以任意角度朝向带电体，通过连接柔性管和头单元的一端，使位于离子发生器的主体内部的窗处产生的离子朝向带电体发射的连接装置， 以及将柔性管的另一端和离子发生器的主体连接的连接装置。 柔性管中的高压电力线被模制以防止在高压电力线之间的近距离处发生短路并且产生相互感应电压。 短路和互感电压是由高压线相互影响引起的。

公开(公告)号：US06492441B2

公开(公告)日：2002-12-10

申请号：US10015333

申请日：2001-12-11

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08K534

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在制造64M，256M，1G，4G和16G DRAM半导体器件期间的微小图案。

公开(公告)号：US06388039B1

公开(公告)日：2002-05-14

申请号：US09602655

申请日：2000-06-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： C08F22012

CPC分类号： C08F220/34 ,  C07C251/66 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/14

摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAMs and a great improvement in the production yield.

摘要翻译： 公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学特性和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M，1G， 4G和16G DRAM，并且生产产量大大提高。

公开(公告)号：US20100019809A1

公开(公告)日：2010-01-28

申请号：US12509013

申请日：2009-07-24

申请人： Jong-Tae Hwang ,  Moon-Sang Jung ,  Jin-Sung Kim ,  Dae-Ho Kim ,  Min-Ho Jung

发明人： Jong-Tae Hwang ,  Moon-Sang Jung ,  Jin-Sung Kim ,  Dae-Ho Kim ,  Min-Ho Jung

IPC分类号： H03B28/00

CPC分类号： H02M1/4208 ,  Y02B70/126

摘要： Disclosed are a switch controller, a switch control method, and a converter based thereon. The switch controller generates an input sensing voltage corresponding to the input voltage of the converter, and compares the input sensing voltage with a predetermined first reference value. The switch controller generates a zero cross detection signal with a first level or a second level depending upon the comparison result, and generates a reference clock signal varying in frequency in accordance with one cycle of the zero cross detection signal. The switch controller generates digital signals by using the reference clock signal and the zero cross detection signal. The digital signals synchronize with the zero cross detection signal, and increase in accordance with the reference clock signal during a half of one cycle of the zero cross detection signal, while decreasing in accordance with the reference clock signal during the other half cycle of the zero cross detection signal. The switch controller generates a reference signal with a voltage level corresponding to the digital signal.

摘要翻译： 公开了一种开关控制器，开关控制方法和基于其的转换器。 开关控制器产生与转换器的输入电压相对应的输入感测电压，并将输入感测电压与预定的第一参考值进行比较。 开关控制器根据比较结果产生具有第一电平或第二电平的零交叉检测信号，并且根据过零检测信号的一个周期产生频率变化的参考时钟信号。 开关控制器通过使用参考时钟信号和过零检测信号来产生数字信号。 数字信号与零交叉检测信号同步，并且在零交叉检测信号的一个周期的一半期间根据参考时钟信号增加，而在零的另一半周期期间根据参考时钟信号减小 交叉检测信号。 开关控制器产生具有与数字信号对应的电压电平的参考信号。

公开(公告)号：US06548613B2

公开(公告)日：2003-04-15

申请号：US09747364

申请日：2000-12-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC分类号： C08F22018

CPC分类号： C08F220/34 ,  G03F7/091

摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.

摘要翻译： 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可用于制备适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06350818B1

公开(公告)日：2002-02-26

申请号：US09413679

申请日：1999-10-07

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08F834

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1G, 4G and 16G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在64M，256M，1G，4G和16G DRAM半导体器件的制造期间的微小图案。

公开(公告)号：US06998442B2

公开(公告)日：2006-02-14

申请号：US10702977

申请日：2003-11-06

申请人： Min-Ho Jung ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Soo Shin

发明人： Min-Ho Jung ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Soo Shin

IPC分类号： C08L33/14

CPC分类号： G03F7/091 ,  C08F212/14 ,  C08F220/28

摘要： An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.