公开(公告)号：US20090085130A1

公开(公告)日：2009-04-02

申请号：US10585828

申请日：2005-01-28

申请人： Kenji Suzuki ,  Gishi Chung ,  Kazuya Okubo

发明人： Kenji Suzuki ,  Gishi Chung ,  Kazuya Okubo

IPC分类号： H01L29/78

CPC分类号： C23C16/30 ,  C23C16/42 ,  H01L21/28088 ,  H01L29/4966

摘要： The present invention relates to a semiconductor device comprising a semiconductor substrate (1), a gate insulator formed on this substrate, such as a gate oxide film (2), and a gate electrode (3) formed on the insulator. The gate electrode (3) has a metallic compound film (3a). This metallic compound film (3a) is formed by CVD using a material containing a metal carbonyl, e.g., W(CO)6 gas, and at least one of a Si-containing gas and a N-containing gas. The work function of the metallic compound film (3a) thus formed is controllable by the Si and/or N content of the film.

摘要翻译： 本发明涉及一种半导体器件，包括半导体衬底（1），形成在该衬底上的栅极绝缘体（例如栅极氧化膜）和形成在绝缘体上的栅电极。 栅电极（3）具有金属化合物膜（3a）。 该金属化合物膜（3a）通过CVD使用含有羰基金属如W（CO）6气体的材料和含Si气体和含N气体中的至少一种来形成。 由此形成的金属化合物膜（3a）的功函数可以通过膜的Si和/或N含量来控制。

公开(公告)号：US20050189652A1

公开(公告)日：2005-09-01

申请号：US10925976

申请日：2004-08-26

申请人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

发明人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/28518

摘要： A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

摘要翻译： 制备硅衬底，并在硅衬底上形成钛中间层。 然后，在钛中间层上形成含有化合物的复合元素层，构成预定的硅化物膜，形成多层中间结构体，进行热处理，形成由硅基板的硅元素构成的硅化物膜 和含化合物元素层的复合元素。

公开(公告)号：US06404021B1

公开(公告)日：2002-06-11

申请号：US09023712

申请日：1998-02-13

申请人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

发明人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

IPC分类号： H01L2976

CPC分类号： H01L29/4933 ,  H01L21/28061 ,  H01L21/76889 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤， 用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层 。