公开(公告)号：US20030059719A1

公开(公告)日：2003-03-27

申请号：US09965280

申请日：2001-09-26

Inventor： Takeshi Ohfuji ,  Hiroyuki Inomata ,  Shiho Sasaki ,  Masa-Aki Kurihara

IPC: G03F009/00 ,  G03G016/00 ,  G03C005/00 ,  H01J037/08 ,  G21K005/10

CPC classification number: G03F7/26 ,  G03F1/38 ,  G03F1/72 ,  G03F7/38

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract translation: 描述了通过用异质和不均匀的后曝光热处理处理曝光图像来修改辐射敏感层中的曝光图像的系统和方法。 处理可以包括提供暴露特征的不同部分，例如不同的曝光特征或临界尺寸，其具有来自热修饰系统（例如后曝光烘烤炉或配置成提供不同热通量的热板）的不同热通量。 热修饰系统可以包括一个或多个可调间隔件，以通过调节源和层之间的间隔距离来调节从热能源到辐射敏感层的辐射能量通量。

公开(公告)号：US20030042411A1

公开(公告)日：2003-03-06

申请号：US10232503

申请日：2002-08-30

Inventor： Ka-Ngo Leung ,  Jani Reijonen

IPC: H01J037/08 ,  H05H003/02

CPC classification number: H05H3/02 ,  G21K1/093 ,  H01J37/08 ,  H01J2237/31701

Abstract: The positive and negative ion beam merging system extracts positive and negative ions of the same species and of the same energy from two separate ion sources. The positive and negative ions from both sources pass through a bending magnetic field region between the pole faces of an electromagnet. Since the positive and negative ions come from mirror image positions on opposite sides of a beam axis, and the positive and negative ions are identical, the trajectories will be symmetrical and the positive and negative ion beams will merge into a single neutral beam as they leave the pole face of the electromagnet. The ion sources are preferably multicusp plasma ion sources. The ion sources may include a multi-aperture extraction system for increasing ion current from the sources.

Abstract translation: 正离子束和负离子束合并系统从两个单独的离子源中提取同一物种的正负离子和相同的能量。 来自两个源的正离子和负离子通过电磁体的极面之间的弯曲磁场区域。 由于正离子和负离子来自光束轴相对侧的镜像位置，正负离子相同，所以轨迹将是对称的，正离子和负离子束在离开时会合并成单个中性光束 电磁铁的极面。 离子源优选为多级等离子体离子源。 离子源可以包括用于增加源的离子电流的多孔提取系统。

公开(公告)号：US20030038252A1

公开(公告)日：2003-02-27

申请号：US10177970

申请日：2002-06-21

Applicant: Toyo Tanso Co., Ltd.

Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC: G21K005/10 ,  H01J037/08 ,  G21F001/00 ,  H01L021/425

CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US20030010936A1

公开(公告)日：2003-01-16

申请号：US10188580

申请日：2002-07-03

Applicant: Nikon Corporation

Inventor： Jin Udagawa ,  Noriyuki Hirayanagi

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045

Abstract: Alignment marks are disclosed that provide, when scanned by a detection-light beam, an enhanced signal-amplitude change. Such an alignment mark is formed on a mark substrate and is used for performing an alignment in a charged-particle-beam (CPB) microlithography system. The alignment mark includes at least one mark element defined as a corresponding height-difference characteristic in the mark substrate. The mark element includes more than two height-difference edges that would be encountered by a detection-light beam being scanned across the element. The height-difference edges of the element can be defined by multiple individual mark-element components that collectively provide the more than two height-difference edges of the mark element. Alternatively, for example, the element can include two height-difference edges at respective edges of the mark element and at least one height-difference edge situated between the two height-difference edges at respective edges of the mark element. The alignment mark is suitable for detection by an optical alignment-detection device of a CPB microlithography system.

Abstract translation: 公开了对准标记，当通过检测光束扫描时，提供增强的信号幅度变化。 这种对准标记形成在标记基板上，用于在带电粒子束（CPB）微光刻系统中进行取向。 对准标记包括至少一个标记元件，其被定义为标记衬底中相应的高差特性。 标记元件包括将跨过元件扫描的检测光束将遇到的两个以上的高度差边缘。 元素的高差边缘可以由共同提供标记元素的两个以上高度差边缘的多个单独的标记元素分量来定义。 或者，例如，元件可以包括在标记元件的相应边缘处的两个高差边缘和位于标记元件的相应边缘处的两个高差差边缘之间的至少一个高差差边缘。 对准标记适用于CPB微光刻系统的光学对准检测装置的检测。

公开(公告)号：US20030010935A1

公开(公告)日：2003-01-16

申请号：US09903307

申请日：2001-07-11

Inventor： Michael R. Sogard ,  Michael Kovalerchik ,  Douglas C. Watson

IPC: G21K005/10 ,  H01J037/08

CPC classification number: G03F7/70708 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70816 ,  H01J37/20

Abstract: A stage assembly (10) for moving and positioning a device (26) includes a device stage (14), a stage mover assembly (16), and a follower assembly (18). The stage mover assembly (16) moves the device stage (14) along an X axis, along a Y axis and about a Z axis. The follower assembly (18) includes a first follower guide (76) and a first follower frame (80). The first follower guide (76) supports the first follower frame (80) and allows the first follower frame (80) to move along the Y axis. Further, the first follower frame (80) supports the device stage (14) and allows the device stage (14) to move along the Y axis, along the X axis, and about the Z axis. Importantly, the first follower frame (80) is moved along the Y axis with a first follower mover (84). With this design, the device stage (14) can be made relatively thin vertically and the control lines (20) to the device stage (14) can be relatively short.

Abstract translation: 用于移动和定位装置（26）的台架组件（10）包括装置台（14），平台移动器组件（16）和从动组件（18）。 台架动子组件（16）沿Y轴和Z轴沿X轴移动装置台（14）。 从动组件（18）包括第一从动引导件（76）和第一从动件框架（80）。 第一从动引导件（76）支撑第一从动件框架（80）并允许第一从动件框架（80）沿着Y轴移动。 此外，第一跟随框架（80）支撑装置台（14），并允许装置台（14）沿Y轴沿着X轴和Z轴移动。 重要的是，第一跟随器框架（80）通过第一跟随器移动器（84）沿着Y轴移动。 通过这种设计，装置台（14）可以做成相对薄的垂直方向，并且到装置台（14）的控制线（20）可以相对较短。

公开(公告)号：US20020130271A1

公开(公告)日：2002-09-19

申请号：US10079490

申请日：2002-02-22

Applicant: Kabushiki Kaisha Toshiba

Inventor： Atsushi Murakoshi ,  Kyoichi Suguro

IPC: H01J027/00 ,  G21K005/10 ,  H01J037/08 ,  H01L021/04 ,  H01L021/425

CPC classification number: H01J37/3171 ,  H01L21/26513

Abstract: In an ion implantation method using an ion implantation equipment having an extraction electrode and a post accelerator, ion is uniformly implanted into a shallow region from the surface of a sample by setting an applied volt. of the post accelerator higher than an applied volt. of the extraction electrode.

公开(公告)号：US20020127484A1

公开(公告)日：2002-09-12

申请号：US10092161

申请日：2002-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tetsuro Nakasugi

IPC: G03F009/00 ,  G03C005/00 ,  A61N005/00 ,  G21G005/00 ,  G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

Abstract: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.

Abstract translation: 带电粒子束曝光装置包括射束枪，投影光学器件，装载样品的样品台，其中将形成从投影光学器件投射的图像，预先形成第一标记，第二标记暴露于带电粒子 通过第一标记附近的投影光学元件具有第一入射能量的光束，当用不同于第一入射能量的第二入射能量扫描该区域时，检测器从包括第一和第二标记的区域检测电子信号的检测器 计算电路，根据检测信号计算第一和第二标记之间的位置偏移;基于计算出的位置偏移校正第一标记的位置的校正电路;以及基于校正位置对准所需图案的曝光控制电路 的第一个标记。

公开(公告)号：US20020100881A1

公开(公告)日：2002-08-01

申请号：US10105257

申请日：2002-03-26

Inventor： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

IPC: H01J037/08 ,  G21K005/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract translation: 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版 当指定的模板掩模孔组被曝光时，执行掩模转印。 重复这些操作，以便执行所有曝光处理。

公开(公告)号：US20020084429A1

公开(公告)日：2002-07-04

申请号：US09981768

申请日：2001-10-17

Inventor： Harold G. Craighead ,  Cindy K. Harnett ,  K. M. Satyalakshmi

IPC: H01J037/08

CPC classification number: B82Y30/00 ,  G03F7/165 ,  H01J2237/31794

Abstract: The present invention provides a method of patterning a self-assembled monolayer (SAM) on a substrate comprising employing low electron-beam lithography to selectively deactivate functional groups at the surface of said SAM in a preselected area of said surface, wherein said functional groups bind to a target substance but said deactivated functional groups do not, so that the surface of said SAM can be contacted with said target substance so that the target substance binds to said functional groups but does not bind to said deactivated groups in said preselected area, to yield a pattern of said target substance on said surface.

Abstract translation: 本发明提供了一种在衬底上构图自组装单层（SAM）的方法，包括采用低电子束平版印刷法在所述表面的预选区域中选择性地使所述SAM表面处的官能团失活，其中所述官能团结合 但是所述失活的官能团不是这样的，使得所述SAM的表面可以与所述目标物质接触，使得目标物质与所述官能团结合，但不结合所述预选区域中的所述失活基团， 在所述表面上产生所述目标物质的图案。

公开(公告)号：US20020064714A1

公开(公告)日：2002-05-30

申请号：US10013861

申请日：2001-12-13

Inventor： Yoshihiko Okamoto

IPC: G03F009/00 ,  G03C005/00 ,  A61N005/00 ,  G21G005/00 ,  G21K005/10 ,  H01J037/08

CPC classification number: G03F1/29 ,  G03F1/26 ,  G03F1/30 ,  Y10S438/948

Abstract: The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180null is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Abstract translation: 本发明涉及实现IC芯片的小型化和更高集成化以及改进其制造工艺中使用的掩模的微型化技术。 换句话说，通过掩模传输的光的相位被控制在一个掩模图案内。 具体地，透明膜形成为沿着通过放大或缩小掩模图案而形成的图案覆盖掩模图案，否则在掩模基板中形成凹槽。 在透过掩模基板的光和透明膜或凹槽之间产生180°的相位差，导致每个光的干涉彼此抵消。 因此，转印到晶片上的图案具有改进的分辨率，用于本发明。