公开(公告)号：US06710985B2

公开(公告)日：2004-03-23

申请号：US09735388

申请日：2000-12-12

Applicant: Kenji Noma

Inventor： Kenji Noma

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/325

Abstract: There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3—1 and a second soft magnetic layer 3—3 formed of soft magnetic materials and an antiparallel coupling middle layer 3—2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1—2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and &agr;-Ta or an alloy including an element of the selected metal.

Abstract translation: 提供了其中层间耦合场Hin最小化并产生大的再生输出的磁阻膜。 多层膜包括底层1，反铁磁层2，钉扎磁性层3，非磁性中间层4和自由磁性层5，钉扎磁性层包括第一软磁性层3-1和第二软磁性层 由软磁性材料形成的层3-3和形成在软磁性层之间的反平行耦合中间层3-2，用于将软磁性层的磁化彼此相反地相反地耦合，反铁磁层包括有序形式 包含Mn的反铁磁材料和作为反铁磁性层的直接衬底的第二底层1-2包括选自由Ru，Os，Re，Tc，Cd，Ti，Zn，Al，Au，Ir，Pd ，Pt，Rh，Ag，Nb，Mo，W，V和α-Ta或包含所选金属元素的合金。

公开(公告)号：US06704176B2

公开(公告)日：2004-03-09

申请号：US10010080

申请日：2001-11-13

Applicant: Alexander M. Shukh ,  Dimitar V. Dimitrov ,  Sining Mao ,  Ananth Naman ,  Philip A. Seekell ,  Erli Chen ,  Lujun Chen

Inventor： Alexander M. Shukh ,  Dimitar V. Dimitrov ,  Sining Mao ,  Ananth Naman ,  Philip A. Seekell ,  Erli Chen ,  Lujun Chen

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Abstract translation: 用于数据存储系统的自旋阀传感器包括自由和固定铁磁（FM）层，其间的导电层，接触引线，自由层偏置元件和反铁磁（AFM）层。 钉扎层具有相对的端部，其限定自旋阀传感器的有效区域的宽度，其响应于施加的磁场具有巨大的磁阻效应。 自由层定位在被钉扎层的下方并且具有延伸超出有效区域的相对端。 接触引线邻接被钉扎层并覆盖导电层的部分。 自由层偏置元件抵靠自由层的端部并且沿纵向方向偏置自由层的磁化。

公开(公告)号：US06704175B2

公开(公告)日：2004-03-09

申请号：US09903698

申请日：2001-07-13

Applicant: Shuxiang Li ,  Satoru Araki

Inventor： Shuxiang Li ,  Satoru Araki

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/0008

Abstract: A magnetoresistive (MR) head including, for example, a spin valve (SV) MR element having a sense current passing through the SV in a current-perpendicular-to-the-plane (CPP) mode. A free layer of the SV is transversely biased by a magnetostatic coupling field from an in-stack transverse bias layer. The transverse bias layer is separated from the free layer by a nonmagnetic high resistive spacer layer, which can cause strong spin memory loss and also provide a longitudinal biasing to the free layer of the SV. An out of stack longitudinal bias arrangement may alternatively be provided to impart a longitudinal bias to the free layer. The SV MR element comprises a MR promoting (MRP) layer either within in or adjacent to the free layer 90 or the pinned layer 110 This MR head structure provides enhanced linearity of the response to the magnetic field being sensed.

Abstract translation: 磁阻（MR）磁头包括例如具有在电流垂直于平面（CPP）模式中通过SV的感测电流的自旋阀（SV）MR元件。 SV的自由层由叠层横向偏置层的静磁耦合场横向偏置。 横向偏置层通过非磁性高电阻间隔层与自由层分离，这可能导致强的自旋记忆损失，并且还向SV的自由层提供纵向偏置。 堆叠纵向偏置装置可以替代地提供以向纵向偏置赋予自由层。 SV MR元件包括在自由层90内或邻近自由层90或被钉扎层110中的MR促进（MRP）层。该MR头结构提供对被感测的磁场的响应的增强的线性。

公开(公告)号：US06700759B1

公开(公告)日：2004-03-02

申请号：US09585988

申请日：2000-06-02

Applicant: Kenneth E. Knapp ,  Kyusik Sin

Inventor： Kenneth E. Knapp ,  Kyusik Sin

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: An electrically conductive sidewall for an electromagnetic transducer having a magnetoresistive sensor is formed as a layer oriented substantially perpendicular to other layers of the sensor, and is used as a mask for defining the width of the sensor. This allows the sensor to be made much thinner than conventional sensors, providing higher resolution in a track width direction. The sidewall can be nonmagnetic, serving as a spacer between the magnetic sensor layers and an adjacent magnetic shield without the need for a protective cap to guard against damage from polishing and wet etching. Alternatively, the sidewall can be magnetic, serving as an extension of the shield. In either case, the sidewall reduces the effective length of the sensor for linear resolution, sharpening the focus of the sensor and increasing linear density. Also reduced is the tolerance for error in sensor width and length. The combination of increased resolution in track width and track length directions provides a large increase in areal resolution, such that sensors in accordance with the present invention may be able to resolve signals at a density exceeding a terabit per square inch. A correspondingly narrow pole-tip for an inductive transducer that may be employed in conjunction with the magnetoresistive sensor is also disclosed.

Abstract translation: 具有磁阻传感器的电磁换能器的导电侧壁形成为基本上垂直于传感器的其它层定向的层，并且被用作限定传感器宽度的掩模。 这允许传感器比常规传感器薄得多，在轨道宽度方向上提供更高的分辨率。 侧壁可以是非磁性的，用作磁性传感器层和相邻的磁屏蔽之间的间隔物，而不需要保护帽以防止抛光和湿蚀刻的损伤。 或者，侧壁可以是磁性的，用作屏蔽的延伸部分。 在任一情况下，侧壁减小了传感器的有效长度，用于线性分辨率，锐化传感器的焦点和增加线密度。 传感器宽度和长度误差的公差也减少了。 轨道宽度和轨道长度方向上增加的分辨率的组合提供了面积分辨率的大幅度增加，使得根据本发明的传感器可能能够以超过每平方英吋的密度来解析信号。 还公开了可以与磁阻传感器结合使用的用于感应换能器的相应窄的极尖。

公开(公告)号：US06700755B2

公开(公告)日：2004-03-02

申请号：US09873071

申请日：2001-05-31

Applicant: Mustafa Pinarbasi

Inventor： Mustafa Pinarbasi

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  Y10T29/49044

Abstract: A spin valve sensor has a pinned layer structure which includes first, second and third pinned films wherein the first pinned film is nickel iron and is located between the second and third pinned films which are cobalt iron. This structure significantly reduces the magnetostriction of the free layer structure of the spin valve sensor to an acceptable level.

Abstract translation: 自旋阀传感器具有钉扎层结构，其包括第一，第二和第三钉扎膜，其中第一钉扎膜为镍铁，并且位于第二和第三钉铁之间的钉扎膜。 该结构显着地将自旋阀传感器的自由层结构的磁致伸缩降低至可接受的水平。

公开(公告)号：US06697235B2

公开(公告)日：2004-02-24

申请号：US10041611

申请日：2002-01-10

Applicant: Takayoshi Ohtsu ,  Koichi Nishioka

Inventor： Takayoshi Ohtsu ,  Koichi Nishioka

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1107

Abstract: A magnetoresistive head includes a substrate, first and second magnetic shields, a magnetoresistive effect film formed within a gap layer between the first and second magnetic shields, a permanent magnet layer provided on both sides of the magnetoresistive effect film in order to apply a magnetic field to the film, and an electrode film provided on the permanent magnet layer so as to permit a signal detected current to flow, wherein a magnetic film is stacked on the permanent magnet layer with a nonmagnetic separation layer interposed between the permanent magnet layer and the magnetic film so that the magnetic film has formed therein a magnetic path, thus, it is possible to provide a GMR reproduce head of which the reproduction sensitivity can be maintained high even if the track width is narrow.

Abstract translation: 磁阻头包括衬底，第一和第二磁屏蔽，形成在第一和第二磁屏蔽之间的间隙层内的磁阻效应膜，设置在磁阻效应膜两侧的永磁体层，以施加磁场 以及设置在永久磁铁层上以使信号检测电流流动的电极膜，其中磁性膜层叠在永磁体层上，其中非磁性分离层置于永磁体层和磁性层之间 使得磁性膜在其中形成有磁路，因此，即使轨道宽度窄，也可以提供其再现灵敏度可以保持较高的GMR再现头。

公开(公告)号：US06690552B2

公开(公告)日：2004-02-10

申请号：US09729392

申请日：2000-12-04

Applicant: Kenji Noma ,  Hitoshi Kanai

Inventor： Kenji Noma ,  Hitoshi Kanai

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268

Abstract: There is provided a magnetoresistive film high in resistance to destruction. The magnetoresistive film is a multilayered film including: an antiferromagnetic layer 2 for generating a bias magnetic field; a pinned magnetic layer 3 having magnetization whose direction is fixed by the bias magnetic field; a free magnetic layer 5 having magnetization whose direction changes in accordance with an external magnetic field; and a nonmagnetic middle layer 4 held between the pinned magnetic layer and the free magnetic layer, and is held by a pair of insulation layers (not shown). When a current is passed parallel to the magnetoresistive film, a current center as a position of the thickness direction for dividing the current into two so as to obtain respective equal current amounts is positioned on a side including the pinned magnetic layer during dividing of the magnetoresistive film into two in a center position of a layer thickness of the nonmagnetic middle layer in the thickness direction.

Abstract translation: 提供了耐破坏性高的磁阻膜。 磁阻膜是一种多层膜，包括：用于产生偏磁场的反铁磁层2; 具有通过偏置磁场固定其方向的磁化的钉扎磁性层3; 具有根据外部磁场的方向变化的磁化的自由磁性层5; 以及保持在钉扎磁性层和自由磁性层之间的非磁性中间层4，并且被一对绝缘层（未示出）保持。 当电流平行于磁阻膜通过时，作为用于将电流分成二个以获得相应电流量的电流的厚度方向的位置的电流中心位于包含磁化层的磁性层的一侧 在厚度方向上将非磁性中间层的层厚度的中心位置分成两层。

公开(公告)号：US06683760B1

公开(公告)日：2004-01-27

申请号：US09670145

申请日：2000-09-26

Applicant: Katsuya Kikuiri

Inventor： Katsuya Kikuiri

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/3967 ,  G11B5/48 ,  G11B5/4893 ,  G11B5/534

Abstract: A thin film magnetic head that is ready for positioning of the elevation of the MR layer and most suitable for high density recording to be used for the helical scan type magnetic recording and reproducing apparatus, comprising a lower shield layer formed on a substrate, a lower gap layer formed on the upper shield layer, a magnetoresistive layer formed on the lower shield layer via the lower gap layer, an upper gap layer formed on the magnetoresistive layer, and an upper shield layer formed on the magnetoresistive layer via the upper gap layer, besides providing a convex portion on the principal face of the upper shield layer.

Abstract translation: 一种薄膜磁头，其准备用于定位MR层的高度并且最适合于用于螺旋扫描型磁记录和再现装置的高密度记录，包括形成在基板上的下屏蔽层，下层 形成在上屏蔽层上的间隙层，经由下间隙层形成在下屏蔽层上的磁阻层，形成在磁阻层上的上间隙层，以及经由上间隙层形成在磁阻层上的上屏蔽层， 除了在上屏蔽层的主面上设置凸部外。

公开(公告)号：US06671138B2

公开(公告)日：2003-12-30

申请号：US10033602

申请日：2001-12-27

Applicant: Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

Inventor： Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

Abstract: An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.

Abstract translation: 本发明的目的是提供一种磁阻效应型磁头，其磁阻率高，同时包含叠层铁氧体膜。 磁阻效应型磁头的固定磁性层具有与第一固定磁性层相比层压在离自由磁性层更远的位置的第一固定磁性层，第二固定磁性层和相对平行耦合中间体 介于第一固定磁性层和第二固定磁性层之间的层，其中第一和第二固定磁性层的磁化彼此耦合，使得磁化指向基本平行且相互相反的方向。 第二固定磁性层由不同于所述第一固定磁性层的材料的材料形成，并且具有高于所述第一固定磁性层的电阻率的电阻率。

公开(公告)号：US06661627B1

公开(公告)日：2003-12-09

申请号：US09856783

申请日：2001-05-25

Applicant: Kouichi Kadokawa

Inventor： Kouichi Kadokawa

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/0018 ,  G11B2005/3996

Abstract: A fixed magnetic recording device which can suppress dispersions appearing, upon manufacturing, on an effective track width and a longitudinal bias magnetic field of a magnetic head using a hard bias system. A magnetic recording device, which includes a magnetic head using a hard bias system, the head having a hard magnetic film (3) for adding a magnetic field in a longitudinal bias direction to a magnetic resistance film (1) and for controlling a magnetic domain, is characterized in that the hard magnetic film (3) includes a solenoid (4) for adjusting a magnetic field running in a longitudinal bias direction. Thus, it is possible to make fine adjustments on a magnetic field in a longitudinal bias direction and to maintain an optimum value. Consequently, it is possible to improve the linear response of a reproducing output of the magnetic head and to adjust an effective track width of the magnetic head.

Abstract translation: 一种固定磁记录装置，其可以使用硬偏置系统抑制在制造时在磁头的有效轨道宽度和纵向偏置磁场上出现的分散体。 一种磁记录装置，其包括使用硬偏置系统的磁头，所述磁头具有硬磁膜（3），用于将纵向偏置方向的磁场加到磁阻膜（1）上，并用于控制磁畴 的特征在于，硬磁性膜（3）包括用于调节沿纵向偏置方向运行的磁场的螺线管（4）。 因此，可以在纵向偏置方向上对磁场进行微调并保持最佳值。 因此，可以改善磁头的再现输出的线性响应并调节磁头的有效磁道宽度。