公开(公告)号：US06563679B1

公开(公告)日：2003-05-13

申请号：US09690827

申请日：2000-10-18

Applicant: Shuxiang Li ,  Satoru Araki

Inventor： Shuxiang Li ,  Satoru Araki

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934

Abstract: A current perpendicular-to-the-plane magnetoresistance (CPP-MR) read head includes a top shield and a bottom shield formed of magnetically shielding, electrically-conductive material. A multilayer magnetoresistance (MR) structure is disposed between the top shield and the bottom shield. The MR structure is in electrical contact with the top and bottom shields. A transverse magnetic field generating structure is adjacent the MR structure to transversely, magnetically bias the MR structure. The transverse magnetic field generating structure includes two permanent magnets on either side of the MR structure, and a T-shaped soft magnetic layer to direct magnetic flux from the magnets to the MR structure. In this manner, the read head provides a strong and uniform transverse magnetic bias to the MR structure.

Abstract translation: 电流垂直于平面的磁阻（CPP-MR）读头包括顶屏蔽和由屏蔽屏蔽的导电材料形成的底屏蔽。 多层磁阻（MR）结构设置在顶部屏蔽和底部屏蔽之间。 MR结构与顶部和底部屏蔽件电接触。 横向磁场产生结构横向与MR结构相邻，对MR结构进行磁偏置。 横向磁场产生结构在MR结构的两侧包括两个永磁体，以及T形软磁层，用于将磁通量从磁体引导到MR结构。 以这种方式，读取头向MR结构提供强而均匀的横向磁偏置。

公开(公告)号：US06512660B1

公开(公告)日：2003-01-28

申请号：US09686987

申请日：2000-10-17

Applicant: Shuxiang Li ,  Satoru Araki

Inventor： Shuxiang Li ,  Satoru Araki

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/398 ,  G11B2005/0008 ,  G11B2005/0018

Abstract: A current perpendicular-to-the-plane magnetoresistance (CPP-MR) read head includes a top shield, a bottom shield, and a giant magnetoresistance structure. Top and bottom shields are formed of magnetically shielding, electrically conductive material. The GMR structure is disposed between the top shield and the bottom shield with the GMR structure being in electrical contact with the top and bottom shield such that a sense current flows from one of the top and bottom shields through the GMR structure to the other one of the top and bottom shields. A metal pillar is electrically connected to one of the top and bottom shields. The metal pillar carries the sense current and is disposed such that the current flows in a direction generally perpendicular-to-the-plane of the GMR structure. Depending on the particular application, the read head can be configured so that current flowing in the metal pillar provides either a longitudinal or a transverse bias to the giant magnetoresistance structure.

Abstract translation: 电流垂直于平面的磁阻（CPP-MR）读头包括顶屏蔽，底屏蔽和巨磁电阻结构。 顶部和底部屏蔽由磁屏蔽导电材料形成。 GMR结构设置在顶部屏蔽和底部屏蔽之间，其中GMR结构与顶部和底部屏蔽电接触，使得感测电流从顶部和底部屏蔽中的一个通过GMR结构流动到另一个 顶部和底部的盾牌。 金属支柱电连接到顶部和底部屏蔽之一。 金属柱承载感测电流并且被布置成使得电流在大致垂直于GMR结构的平面的方向上流动。 根据具体应用，读取头可以被配置成使得在金属柱中流动的电流为巨磁电阻结构提供纵向或横向偏置。

公开(公告)号：US06680827B2

公开(公告)日：2004-01-20

申请号：US09729719

申请日：2000-12-06

Applicant: Shuxiang Li ,  Satoru Araki

Inventor： Shuxiang Li ,  Satoru Araki

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A current perpendicular-to-the-plane magnetoresistance (CPP-MR) device includes a first magnetic shield, a second magnetic shield, and a spin valve structure. The first and second magnetic shields are formed of an electrically conductive and magnetically shielding material. A read gap is defined between the first and second magnetic shields, and the spin valve structure is disposed between the first and second magnetic shields. The spin valve structure is electrically connected and magnetically separated from the first and second magnetic shields such that the first and second magnetic shields act as electrical contact leads.

Abstract translation: 电流垂直于平面的磁阻（CPP-MR）器件包括第一磁屏蔽，第二磁屏蔽和自旋阀结构。 第一和第二磁屏蔽由导电和磁屏蔽材料形成。 在第一和第二磁屏蔽之间限定读取间隙，并且自旋阀结构设置在第一和第二磁屏蔽之间。 自旋阀结构与第一和第二磁屏蔽电连接并磁分离，使得第一和第二磁屏蔽件用作电接触引线。

公开(公告)号：US06704175B2

公开(公告)日：2004-03-09

申请号：US09903698

申请日：2001-07-13

Applicant: Shuxiang Li ,  Satoru Araki

Inventor： Shuxiang Li ,  Satoru Araki

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/0008

Abstract: A magnetoresistive (MR) head including, for example, a spin valve (SV) MR element having a sense current passing through the SV in a current-perpendicular-to-the-plane (CPP) mode. A free layer of the SV is transversely biased by a magnetostatic coupling field from an in-stack transverse bias layer. The transverse bias layer is separated from the free layer by a nonmagnetic high resistive spacer layer, which can cause strong spin memory loss and also provide a longitudinal biasing to the free layer of the SV. An out of stack longitudinal bias arrangement may alternatively be provided to impart a longitudinal bias to the free layer. The SV MR element comprises a MR promoting (MRP) layer either within in or adjacent to the free layer 90 or the pinned layer 110 This MR head structure provides enhanced linearity of the response to the magnetic field being sensed.

Abstract translation: 磁阻（MR）磁头包括例如具有在电流垂直于平面（CPP）模式中通过SV的感测电流的自旋阀（SV）MR元件。 SV的自由层由叠层横向偏置层的静磁耦合场横向偏置。 横向偏置层通过非磁性高电阻间隔层与自由层分离，这可能导致强的自旋记忆损失，并且还向SV的自由层提供纵向偏置。 堆叠纵向偏置装置可以替代地提供以向纵向偏置赋予自由层。 SV MR元件包括在自由层90内或邻近自由层90或被钉扎层110中的MR促进（MRP）层。该MR头结构提供对被感测的磁场的响应的增强的线性。