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公开(公告)号：US5838090A
公开(公告)日：1998-11-17
申请号：US972162
申请日：1997-11-17
CPC分类号： H03H9/02582
摘要： An object of the present invention is to improve an SAW propagation velocity V, an electromechanical coupling coefficient (K.sup.2), and a delay time temperature coefficient (TCD) to achieve a high-frequency SAW device and power saving and size reduction of the device. An SAW device according to the present invention includes at least diamond as a substrate material, a c-axis oriented polycrystalline LiNbO.sub.3 layer, arranged on the diamond, an SiO.sub.2 layer arranged on the LiNbO.sub.3 layer, and an interdigital transducer and uses an SAW in an nth mode (n=0, 1, 2: wavelength: .lambda. .mu.m). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), and the thickness of the SiO.sub.2 layer is t.sub.2 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda.) and kh.sub.2 =2.pi.(t.sub.2 /.lambda.) fall within predetermined ranges. In addition, the mode of the SAW is selected. With this arrangement, an SAW device having a propagation velocity (V) of 7,000 m/s or more, an electromechanical coupling coefficient (K.sup.2) of 2% or more, and a coefficient TCD of .+-.10 ppm/.degree.C. or less, which is the stability of the device frequency with respect to the temperature, can be provided.
摘要翻译： 本发明的目的是提高SAW传播速度V，机电耦合系数（K2）和延迟时间温度系数（TCD），以实现高频SAW器件，并且节省设备的功率和尺寸。 根据本发明的SAW器件至少包括作为衬底材料的金刚石，布置在金刚石上的c轴取向的多晶LiNbO 3层，布置在LiNbO 3层上的SiO 2层，以及叉指换能器，并且使用 第n个模式（n = 0,1,2：波长：λm）。 当LiNbO 3层的厚度为t1（μm），SiO 2层的厚度为t2（μm）时，kh1 =2π（t1 /λ），kh2 =2π（t2 /λ）落在规定的范围内 范围。 此外，选择SAW的模式。 根据该结构，具有传播速度（V）为7000m / s以上，机电耦合系数（K2）为2％以上，系数TCD为+/- 10ppm /℃的SAW器件，或 可以提供相对于温度的装置频率的稳定性。
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22.发明授权Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 失效具有较薄的ZnO压电层的金刚石 - ZnO表面声波器件
公开(公告)号：US5777422A
公开(公告)日：1998-07-07
申请号：US720369
申请日：1996-09-27
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer thinner ZnO layer, which can be operated at higher frequency, with superior characteristics including less energy loss. The first SAW device according to the present invention comprises a layer constitution shown in FIG. 23, wherein, for 0th mode surface acoustic wave having a wavelength .lambda., a parameter kh3 =(2.pi./.lambda.)t3 satisfies: 0.0470.ltoreq.kh3.ltoreq.0.0625, and wherein a parameter kh1 =(2.pi./.lambda.)t1 and a parameter kh2=(2.pi./.lambda.)t2 are given within a region A-B-C-D-E-F-A in a two-dimensional Cartesian coordinate graph having ordinate axis of the kh1 and abscissa axis of kh2, the outer edge of the region A-B-C-D-E-F-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, and F, and lines A-B, B-C, C-D, D-E, E-F and F-A, as shown in a two-dimensional Cartesian coordinate graph of FIG. 3.
摘要翻译： 本发明涉及一种SAW器件，其包括可以以更高频率操作的金刚石层更薄的ZnO层，具有包括较少能量损失的优异特性。 根据本发明的第一SAW器件包括图1所示的层结构。 23，其中，对于具有波长λ的第0模式声表面波，参数kh3 =（2π/λ）t3满足：0.0470≤kh3≤0.0625，并且其中参数kh1 =（2π/λ） t1和参数kh2 =（2 pi /λ）t2在具有kh1和横坐标轴kh2的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFA内给出，区域ABCDEFA的外边缘由a 由点A，B，C，D，E和F以及线AB，BC，CD，DE，EF和FA组成的笛卡尔坐标中的闭合链，如图2的二维笛卡尔坐标图所示。 3。
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公开(公告)号：US5151109A
公开(公告)日：1992-09-29
申请号：US274748
申请日：1988-11-21
IPC分类号： B24D18/00
CPC分类号： B24D18/0045
摘要： A peripheral surface of an annular shaped grinder is distributed with grinding particles. The grinding particles have a particles distribution such that the spacing between the grinding particles in the axial direction is less than 2/3 of the mean diameter of the particle and that the spacing between grinding particles in the circumferential direction is about 5-80 times of the mean particle diameter. The grinder is manufactured by a method of forming a pattern of an adhesive layer on a synthetic resin sheet, fixing the grinding particles to the patterns and laminating the sheets with fixed particles.
摘要翻译： 环形磨床的周边表面与研磨颗粒一起分布。 研磨颗粒具有颗粒分布，使得研磨颗粒在轴向方向上的间隔小于颗粒的平均直径的2/3，并且研磨颗粒在圆周方向上的间隔为约5-80倍 平均粒径。 研磨机是通过在合成树脂板上形成粘合剂层图案的方法制造的，将研磨颗粒固定在图案上并用固定的颗粒层压片材。
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24.发明授权Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 有权金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法公开(公告)号：US06210780B1
公开(公告)日：2001-04-03
申请号：US09166840
申请日：1998-10-06
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H01L4118
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译： 通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒 表面缺陷检测装置。 金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。 优选地，金刚石表面应具有小于Ra20nm的粗糙度。 金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。
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公开(公告)号：US5531087A
公开(公告)日：1996-07-02
申请号：US292940
申请日：1994-08-18
摘要： A metal sheet bending machine for bending a metal sheet inserted between an upper bender and lower bender to a desired angle. While the metal sheet is being bent to the desired angle, a linear image of projected measuring light, which rotates with a change in the bending angle of the metal sheet, is formed by a measuring light source on an outer face of the bent metal sheet and sequentially photographed and stored. Based on the stored images, the bending angle of the metal sheet is calculated. Based on the result of the calculation, the positions of tile upper and/or lower benders are controlled whereby the metal sheet can be bent to the desired angle. The bending angle of the metal sheet may be obtained based on the rotating angle of the linear image of projected measuring light formed on the photographed images, or based on an angle formed by the linear image of projected measuring light and a linear image of projected reference light formed by a reference light source for projecting light onto the outer face of the metal sheet while the metal sheet is being bent to the desired angle so as to form the linear image at a desired fixed angle irrespective of the bending angle.
摘要翻译： 一种用于将插入在上弯曲机和下弯曲机之间的金属板弯曲到所需角度的金属板弯曲机。 当金属片被弯曲到所需的角度时，通过测量光源在弯曲的金属片的外表面上形成随着金属片的弯曲角度的变化而旋转的投射的测量光的线性图像 并依次拍摄并存储。 基于所存储的图像，计算金属板的弯曲角度。 基于计算的结果，控制瓦片上部和/或下部弯曲器的位置，从而金属片材可以弯曲到所需的角度。 金属片的弯曲角度可以基于在拍摄图像上形成的投影测量光的线性图像的旋转角度，或者基于由投影的测量光的线性图像和投影的参考线的图像形成的角度来获得 由参考光源形成的光，用于在金属片被弯曲到所需角度的同时将光投射到金属片的外表面上，以便形成所需的固定角度的线性图像，而与弯曲角无关。
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公开(公告)号：US5243811A
公开(公告)日：1993-09-14
申请号：US812038
申请日：1991-12-23
IPC分类号： B24D18/00
CPC分类号： B24D18/0045
摘要： A peripheral surface of an annular shaped grinder is distributed with grinding particles. The grinding particles have a particles distribution such that the spacing between the grinding particles in the axial direction is less than 2/3 of the mean diameter of the particle and that the spacing between grinding particles in the circumferential direction is about 5-80 times of the mean particle diameter. The grinder is manufactured by a method of forming a pattern of an adhesive layer on a synthetic resin sheet, fixing the grinding particles to the patterns and laminating the sheets with fixed particles.
摘要翻译： 环形磨床的周边表面与研磨颗粒一起分布。 研磨颗粒具有颗粒分布，使得研磨颗粒在轴向方向上的间隔小于颗粒的平均直径的2/3，并且研磨颗粒在圆周方向上的间隔为约5-80倍 平均粒径。 研磨机是通过在合成树脂板上形成粘合剂层图案的方法制造的，将研磨颗粒固定在图案上并用固定的颗粒层压片材。
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公开(公告)号：US5178497A
公开(公告)日：1993-01-12
申请号：US474061
申请日：1990-04-26
申请人： Hiroyuki Kitabayashi , Tadayuki Ishikawa , Hiroyuki Kuroda , Yoshihiko Nakakoji , Masaki Nobuhara
发明人： Hiroyuki Kitabayashi , Tadayuki Ishikawa , Hiroyuki Kuroda , Yoshihiko Nakakoji , Masaki Nobuhara
IPC分类号： B23D77/00
CPC分类号： B23D77/00 , Y10T408/455 , Y10T408/81
摘要： The present invention relates to an electrodeposited reamer tool (1) for use in precision bore processing.In this electroplated reamer tool (1), a work processing portion (3) in a reamer body is constituted by a finishing portion (4) having a cylindrical outer peripheral surface and a cutting portion (5) provided on the distal end side of the finishing portion (4) and having a tapered configuration, and abrasive grains (6) are electrodeposited on the outer peripheral surfaces of the finishing portion (4) and the cutting portion (5).In the electrodeposited reamer tool (1) is inserted into a prepared hole provided in a work, the prepared hole is enlarged by the cutting portion (5), and the inner surface of the bore is finished by the finishing portion (4).Accordingly, it is possible to form a precision bore of a predetermined inner diameter in a work without preprocessing the prepared hole with precision.
摘要翻译： PCT No.PCT / JP89 / 00888 Sec。 371日期：1990年04月26日 102（e）日期1990年4月26日PCT提交1989年8月30日PCT公布。 出版物WO90 / 02012 日本1990年3月8日。本发明涉及一种用于精密孔加工的电沉积扩孔机（1）。 在该电镀扩孔器工具（1）中，扩孔机主体中的作业处理部（3）由具有圆筒状的外周面的精加工部（4）和设置在该多孔板的前端侧的切断部 精加工部分（4）并且具有锥形构造，并且磨粒（6）电沉积在精加工部分（4）和切割部分（5）的外周表面上。 在电沉积扩孔器工具（1）中插入设置在工件中的预定孔中，通过切割部分（5）扩大预制孔，并由精加工部分（4）完成孔的内表面。 因此，可以在工件中形成预定内径的精密孔，而不会精确地预处理准备的孔。
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公开(公告)号：US08916462B2
公开(公告)日：2014-12-23
申请号：US13610673
申请日：2012-09-11
申请人： Hiroyuki Kitabayashi , Hideto Tamaso , Taku Horii
发明人： Hiroyuki Kitabayashi , Hideto Tamaso , Taku Horii
IPC分类号： H01L21/283
CPC分类号： H01L21/046 , H01L21/0485 , H01L21/049 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a MOSFET includes the steps of: preparing a substrate made of silicon carbide; forming a drain electrode making ohmic contact with the substrate; and forming a backside pad electrode on and in contact with the drain electrode. The drain electrode formed in the step of forming the drain electrode is made of an alloy containing Ti and Si. Further, the backside pad electrode formed is maintained at a temperature of 300° C. or smaller until completion of the MOSFET. Accordingly, the manufacturing process can be efficient while achieving excellent adhesion between the electrodes.
摘要翻译： 一种制造MOSFET的方法包括以下步骤：制备由碳化硅制成的衬底; 形成与基板欧姆接触的漏电极; 以及在所述漏极电极上并与所述漏电极接触形成背面焊盘电极。 在形成漏电极的步骤中形成的漏极由含有Ti和Si的合金制成。 此外，形成的背面焊盘电极保持在300℃以下的温度直到MOSFET完成。 因此，制造工艺可以有效地同时实现电极之间的优异粘附。
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公开(公告)号：US6025636A
公开(公告)日：2000-02-15
申请号：US951615
申请日：1997-10-16
申请人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.
摘要翻译： 表面声波装置至少包括金刚石，形成在金刚石上的单晶LiNbO 3层和与LiNbO 3层接触形成的叉指换能器，并使用n阶的表面声波（波长：λnμm） 模式（n = 1或2）。 当LiNbO 3层的厚度为t1（μm）时，相对于晶体基础坐标系，kh1 =2π（t1 /λn）和切割取向（θ，PHI和由欧拉角表示的psi） 的LiNbO 3层选自特定范围内的值。 因此，实现了提高声表面波的传播速度（V）并提高机电耦合系数（K2）的声表面波装置。
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公开(公告)号：US5783896A
公开(公告)日：1998-07-21
申请号：US791894
申请日：1997-01-31
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.z /.lambda.) and a parameter kh2=2.pi.(t.sub.s /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译： 根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。 其中参数kh3 =2π（tA /λ）为：0.033≤kh3
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