摘要:
A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member.
摘要:
A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) switching the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected in series between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). An electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).
摘要:
A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要:
A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member.
摘要:
A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) switching the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected in series between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). An electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).
摘要:
A semiconductor device includes: a semiconductor chip including: a first main face having an edge portion, a second main face locating the opposite side to the first main face, a crystalline defect region present within a region including at least the edge portion being adjacent to the first main face, the crystalline defect region being configured to have lower stress than the stress in the other semiconductor region for the same strain; and a metallic substrate to be bonded via a bonding member to the first main face of the semiconductor chip.
摘要:
Provided is a dentifrice which exhibits sufficient shape retentivity even when a polymer-based binder is not incorporated, which does not leave a taste or white residues even when the amount of powder incorporated is small, and which has satisfactory dispersibility in the oral cavity and a light feeling of use.A dentifrice containing the following components (A), (B) and (C): (A) 0.1 to 10% by mass of a thickening silica having an oil absorption of 150 to 500 mL/100 g, (B) 0.1 to 8 % by mass of heavy calcium carbonate, and (C) 40 to 70 % by mass of water at a mass ratio (B:A) of the component (B) and the component (A) of 2:1 to 0.5:99.5.
摘要:
Unevenness in density (line noise) resulting from color misregistration among RGB components in a halftone region or a line screen region is suppressed. With respect to a document that is discriminated as a printed photo document or a text/printed photo document that includes black halftones by a document type discrimination section, or to a region segmented into a black halftone region by a segmentation section, a non-uniform image suppressing operation mode is executed. In the non-uniform image suppressing operation mode, a black generation and under color removal section does not carry out a black generation and under color removal process on a pixel in which a minimum value of the image data of the plurality of color components is at least equal to or less than a predetermined threshold.
摘要:
A semiconductor package has: a semiconductor chip having first and second main electrodes arranged on two principal surfaces being opposite to each other; a first main wiring plate connected to the first main electrode and having a first external connection terminal; a second main wiring plate connected to the second main electrode and having a second external connection terminal; a first shell connected through an insulating film to at least a part of a second principal surface of the first main wiring plate, the second principal surface of the first main wiring plate being opposite to a first principal surface of the first main wiring plate that is connected to the first electrode; and a second shell connected through an insulating film to at least a part of a second principal surface of the second main wiring plate, the second principal surface of the second main wiring plate being opposite to a first principal surface of the second main wiring plate that is connected to the second electrode. The first principal surfaces of the first and second main wiring plates are adjacent to and parallel to each other except at the locations where the first and second main wiring plates are connected to the semiconductor chip and the locations where the first and second external connection terminals are formed.
摘要:
Provided is a dentifrice composition excellent in plaque and stain removing effect and feeling upon use. The dentifrice composition has the following components (A), (B) and (C): (A) from 0.2 to 3 weight % of powder cellulose; (B) a surfactant; and (C) from 10 to 30 weight % of an abrasive.