公开(公告)号：US07557363B2

公开(公告)日：2009-07-07

申请号：US11543346

申请日：2006-10-04

Applicant: Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

Inventor： Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

公开(公告)号：US07488958B2

公开(公告)日：2009-02-10

申请号：US11074435

申请日：2005-03-08

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: G21K5/10

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ignitable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.

Abstract translation: 提供了一种用于改变用于离子注入的源气体的系统，装置和方法。 源室具有壳体，其具有一个或多个侧壁和提取板，其中所述一个或多个侧壁和所述提取板围绕所述源室的内部区域。 一个或多个入口提供一个或多个可点燃材料源和内部区域之间的流体连通。 提取板中的提取孔提供源室的内部区域与源室外部的光束路径区域之间的流体连通。 壳体的一个或多个侧壁中的一个或多个扩散孔还提供了内部区域和离子源室外部的扩散区域之间的流体连通，其中沉积的离子可操作以通过扩散孔扩散出源腔室 。

公开(公告)号：US20080067433A1

公开(公告)日：2008-03-20

申请号：US11441609

申请日：2006-05-26

Applicant: Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

Inventor： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

公开(公告)号：US07547899B2

公开(公告)日：2009-06-16

申请号：US11445677

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

公开(公告)号：US07507977B2

公开(公告)日：2009-03-24

申请号：US11441609

申请日：2006-05-26

Applicant: Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

Inventor： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

公开(公告)号：US20080265866A1

公开(公告)日：2008-10-30

申请号：US11742178

申请日：2007-04-30

Applicant: John Zheng Ye ,  Michael Paul Cristoforo ,  Yongzhang Huang ,  Michael A. Graf ,  Bo H. Vanderberg

Inventor： John Zheng Ye ,  Michael Paul Cristoforo ,  Yongzhang Huang ,  Michael A. Graf ,  Bo H. Vanderberg

IPC: G01T1/34

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/30477

Abstract: One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.

Abstract translation: 本发明的一个实施例涉及一种用于对离子束进行成像的装置。 该装置包括具有测量区域的电流测量装置，其中离子束的横截面积进入测量区域。 该装置还包括控制器，其被配置为周期性地对离子束进行束电流测量，并且通过将束电流测量值与当前测量装置内的子区域相关联来确定离子束的二维轮廓。 还公开了其它装置和方法。

公开(公告)号：US20080230713A1

公开(公告)日：2008-09-25

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K. Colvin ,  Kevin J. Hoyt

Inventor： Yongzhang Huang ,  Neil K. Colvin ,  Kevin J. Hoyt

IPC: H01J27/02

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US20080157681A1

公开(公告)日：2008-07-03

申请号：US11648979

申请日：2007-01-03

Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

IPC: H05B37/00

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a,high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电极之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：US20060219938A1

公开(公告)日：2006-10-05

申请号：US11074435

申请日：2005-03-08

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: G01N23/12 ,  G01N21/01 ,  G01N21/51 ,  G01N23/10

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ionizable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.

Abstract translation: 提供了一种用于改变用于离子注入的源气体的系统，装置和方法。 源室具有壳体，其具有一个或多个侧壁和提取板，其中所述一个或多个侧壁和所述提取板围绕所述源室的内部区域。 一个或多个入口提供一个或多个可电离材料源和内部区域之间的流体连通。 提取板中的提取孔提供源室的内部区域与源室外部的光束路径区域之间的流体连通。 壳体的一个或多个侧壁中的一个或多个扩散孔还提供了内部区域和离子源室外部的扩散区域之间的流体连通，其中沉积的离子可操作以通过扩散孔扩散出源腔室 。

公开(公告)号：US06774378B1

公开(公告)日：2004-08-10

申请号：US10681511

申请日：2003-10-08

Applicant: Yongzhang Huang ,  Xiangyang Wu ,  Hans J. Rutishauser

Inventor： Yongzhang Huang ,  Xiangyang Wu ,  Hans J. Rutishauser

IPC: H01J37317

CPC classification number: H05H7/04

Abstract: The present invention concerns a method of tuning a plurality of electrostatic quadrupoles used for focusing an ion beam implanter. The steps of the method include: classifying the plurality of electrostatic quadrupoles into one of a predetermined number of groups, and for each of the predetermined number of groups, tuning the quadrupoles in the group by iteratively substituting values for a voltage ton be applied to each of the quadrupoles in the group using a multi-variable heuristic algorithm and concurrently measuring final beam current measured downstream of the ion accelerator to determine a set of applied voltage values that maximize the final beam current among those applied voltage values tested and utilizing the set of applied voltage values to tune the quadrupoles in the group. If the resulting ion beam is suitable, utilizing the determined applied voltages to tune the quadrupoles. If the resulting ion beam is not suitable, changing the predetermined number of groups and repeating the steps of the method.

Abstract translation: 本发明涉及一种调谐用于聚焦离子束注入机的多个静电四极杆的方法。 该方法的步骤包括：将多个静电四极杆分类为预定数量的组中的一个，并且对于每个预定数量的组，通过迭代地将电压ton的值应用于每个组来调谐组中的四极， 的组合中的四极体使用多变量启发式算法，并同时测量在离子加速器下游测量的最终束电流，以确定一组施加的电压值，其使所测量的所施加电压值中的最终束电流最大化，并利用该组 施加的电压值来调谐组中的四极。 如果所得到的离子束是合适的，则利用所确定的施加的电压来调谐四极杆。 如果所得到的离子束不合适，则改变预定数量的组并重复该方法的步骤。