公开(公告)号：US08445327B2

公开(公告)日：2013-05-21

申请号：US13403714

申请日：2012-02-23

申请人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

发明人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L24/26 ,  H01L24/93 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00

摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

摘要翻译： 提供了发光二极管的晶片级封装工艺。 首先，在生长基板上形成半导体堆叠层。 然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。 然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。 此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。 然后将半导体堆叠层与生长衬底分离。 接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。 接下来，每个半导体堆叠图案电连接到导电插头。

公开(公告)号：US20110312113A1

公开(公告)日：2011-12-22

申请号：US13221908

申请日：2011-08-31

申请人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

发明人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

IPC分类号： H01L33/20

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

摘要翻译： 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US20110057207A1

公开(公告)日：2011-03-10

申请号：US12607068

申请日：2009-10-28

申请人： Feng-Cheng Su ,  Cheng-Ta Kuo ,  Chih-Hao Yang

发明人： Feng-Cheng Su ,  Cheng-Ta Kuo ,  Chih-Hao Yang

IPC分类号： H01L33/00

CPC分类号： F21K9/00 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： An white-light emitting device including a carrier, light emitting diode (LED) chips, and a wavelength converting material is provided. The LED chips are disposed on and electrically connected to the carrier. An equivalent wavelength of the first light emitted from the LED chips and divided into groups is λ. A variation of peak wavelengths of the LED chips in one group is smaller than 5 nm. λ meets an equation: λ = ∑ 1 n  ( λ   i × Ni × Ki ) ∑ 1 n  Ni × Ki n is an integer equal to or larger than 2. λi, Ni, and Ki are respectively an average peak wavelength, an quantity, and an average output efficiency of the LED chips in one group. The variation of λi in different groups is Δλi. 5 nm≦Δλi≦30 nm. The wavelength converting material is excited by the first light to emit a second light. The first light and the second light are mixed to generate a white light.

摘要翻译： 提供了包括载体，发光二极管（LED）芯片和波长转换材料的白光发射器件。 LED芯片设置在载体上并与其电连接。 从LED芯片发射并分成组的第一光的等效波长为λ。 一组LED芯片的峰值波长变化小于5nm。 λ满足一个等式：λ=Σ1 n（（λi××Ni××××））ΣΣΣNi Ni Ni Ni Ni Ni Ni Ni Ni Ni 2. 2. 2. 2. 2. 2. 2. peak peak，peak peak peak peak 波长，数量和平均输出效率。 不同组的λi变化为＆Dgr;λi。 5nm＆nlE;＆Dgr;λi＆nlE; 30nm。 波长转换材料被第一光激发以发射第二光。 将第一光和第二光混合以产生白光。

公开(公告)号：US07888162B2

公开(公告)日：2011-02-15

申请号：US12511812

申请日：2009-07-29

申请人： Yu-Ling Chin ,  Li-Pin Jou ,  Yu-Chih Yang ,  Yu-Cheng Yang ,  Wei-Shou Chen ,  Cheng-Ta Kuo

发明人： Yu-Ling Chin ,  Li-Pin Jou ,  Yu-Chih Yang ,  Yu-Cheng Yang ,  Wei-Shou Chen ,  Cheng-Ta Kuo

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L33/0095 ,  H01L31/022425 ,  H01L33/44 ,  H01S5/0425 ,  Y02E10/50

摘要： This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.

摘要翻译： 本申请公开了一种制造光电子器件的方法，包括以下步骤：提供半导体堆叠层，通过印刷技术在半导体堆叠层上形成至少一种金属粘合剂，通过加热金属粘合剂以除去金属中的溶剂形成电极 粘合剂，其中在电极和半导体叠层之间形成欧姆接触。

公开(公告)号：US20100258827A1

公开(公告)日：2010-10-14

申请号：US12469669

申请日：2009-05-20

申请人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

发明人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

IPC分类号： H01L33/00 ,  H01L21/60

CPC分类号： H01L33/0079 ,  H01L24/26 ,  H01L24/93 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00

摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

摘要翻译： 提供了发光二极管的晶片级封装工艺。 首先，在生长基板上形成半导体堆叠层。 然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。 然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。 此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。 然后将半导体堆叠层与生长衬底分离。 接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。 接下来，每个半导体堆叠图案电连接到导电插头。

公开(公告)号：US20090140280A1

公开(公告)日：2009-06-04

申请号：US12292593

申请日：2008-11-21

申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm and 6.2×104 μm.

摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一垫和第二垫中的至少一个的面积在1.5×10 4 mum到6.2×10 4 m之间。

公开(公告)号：US20080191233A1

公开(公告)日：2008-08-14

申请号：US12000040

申请日：2007-12-07

申请人： Yu-Cheng Yang ,  Cheng-Ta Kuo ,  Sen-Pin Huang ,  Li-Ping Jou

发明人： Yu-Cheng Yang ,  Cheng-Ta Kuo ,  Sen-Pin Huang ,  Li-Ping Jou

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface on opposite sides; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.

摘要翻译： 描述了一种发光二极管及其制造方法。 发光二极管包括：导电基板，包括第一表面和相对侧上的第二表面; 反射器结构，其包括结合到所述导电基板的所述第一表面的导电反射器层和层叠在所述导电反射器层上的导电分布布拉格反射器（DBR）结构; 设置在反射器结构上的光源外延结构; 设置在所述发光体外延结构的一部分上的第一电极; 以及结合到导电基板的第二表面的第二电极。

公开(公告)号：US20080157097A1

公开(公告)日：2008-07-03

申请号：US11699942

申请日：2007-01-30

申请人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

发明人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

摘要翻译： 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US08188505B2

公开(公告)日：2012-05-29

申请号：US12292593

申请日：2008-11-21

申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.

摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和​​6.2×104μm2之间。

公开(公告)号：US08012777B2

公开(公告)日：2011-09-06

申请号：US12496644

申请日：2009-07-02

申请人： Wen-Sung Chang ,  Cheng-Ta Kuo

发明人： Wen-Sung Chang ,  Cheng-Ta Kuo

IPC分类号： H01L21/56

CPC分类号： H01L33/52 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

摘要： A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.

摘要翻译： 提供了一种发光二极管（LED）的封装工艺。 首先，将LED芯片与载体接合以彼此电连接。 之后，载体被加热以升高其温度。 接下来，通过分配工艺在加热的载体上形成密封剂以封装LED芯片，其中在与载体接触之前，密封剂在与载体接触之前的粘度低于封装剂的粘度。 此后，密封剂固化。