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公开(公告)号：US20120305959A1
公开(公告)日：2012-12-06
申请号：US13241667
申请日：2011-09-23
申请人： Kuo-Hui Yu , Chang-Hsin Chu , Chi-Lung Wu , Shin-Jia Chiou , Chung-Hsin Lin , Jui-Chun Chang
发明人： Kuo-Hui Yu , Chang-Hsin Chu , Chi-Lung Wu , Shin-Jia Chiou , Chung-Hsin Lin , Jui-Chun Chang
CPC分类号： H01L33/382 , H01L25/0756 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/16145 , H01L2224/48091 , H01L2224/48463 , H01L2924/0002 , H01L2924/19107 , H01L2933/0016 , H01L2924/00014
摘要： A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.
摘要翻译： 发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面 第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体 层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气 电连接到第二电气型半导体层。
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公开(公告)号：US20120056152A1
公开(公告)日：2012-03-08
申请号：US12876850
申请日：2010-09-07
申请人： Meng Hsin Li , Kuo Hui Yu , Tsung-Hung Lu , Ming-Ji Tsai , Chang Hsin Chu
发明人： Meng Hsin Li , Kuo Hui Yu , Tsung-Hung Lu , Ming-Ji Tsai , Chang Hsin Chu
CPC分类号： H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.
摘要翻译： 在本发明的一个方面，一种发光器件包括：具有形成在衬底上的多层半导体的外延层，具有彼此极性的第一电极和第二电极，并分别电耦合到相应的半导体层 外延层，以及形成在外延层上的棒状结构。 杆结构包括彼此远离的多个杆。
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公开(公告)号：US20110006701A1
公开(公告)日：2011-01-13
申请号：US12887199
申请日：2010-09-21
申请人： Kuo-Hui YU , Yu-Cheng YANG , Cheng-Ta KUO
发明人： Kuo-Hui YU , Yu-Cheng YANG , Cheng-Ta KUO
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译： 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。
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公开(公告)号：US08008680B2
公开(公告)日：2011-08-30
申请号：US12887199
申请日：2010-09-21
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译： 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。
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公开(公告)号：US20090065794A1
公开(公告)日：2009-03-12
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译： 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。
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公开(公告)号：US20130049060A1
公开(公告)日：2013-02-28
申请号：US13397929
申请日：2012-02-16
申请人： Kuo-Hui Yu , Chang-Hsin Chu
发明人： Kuo-Hui Yu , Chang-Hsin Chu
IPC分类号： H01L33/42
摘要： A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer.
摘要翻译： 发光二极管结构。 在一个实施例中，发光二极管结构包括绝缘基板，具有第一电半导体层，发光层和连续层叠在绝缘基板上并包含第一电极的第二电半导体层的发光结构 焊盘区域，第二电极焊盘区域和发光区域，分别设置在第一和第二电极焊盘区域上的第一和第二电极焊盘，设置在发光结构上并连接到发光结构的第二导电指状物 第二电极焊盘和第二电半导体层，以及用于将第二导电指状物与第一电半导体层和发光层绝缘的第一绝缘层。 第二电极焊盘的底表面位于第二电半导体层的上表面的下方。
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公开(公告)号：US20120037946A1
公开(公告)日：2012-02-16
申请号：US12855316
申请日：2010-08-12
申请人： Kuo Hui Yu , Chien-Chun Wang , Chang Hsin Chu
发明人： Kuo Hui Yu , Chien-Chun Wang , Chang Hsin Chu
摘要： In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact.
摘要翻译： 在本发明的一个方面中，一种发光器件包括衬底和在衬底上形成于发光区域和非发射区域中的n型半导体层的多层结构，形成在发光区域中的有源层 n型半导体层上的发光区域中形成的p型半导体层。 发光器件还包括形成在发光区域中并电耦合到p型半导体层的p电极和形成在非发射区域中并电耦合到n型半导体层的n电极。 此外，发光器件还包括形成在非发射区域的第一部分中的n电极和n型半导体层之间的绝缘体，以限定至少一个欧姆接触，使得第一部分中的n电极 的非发射区域通过至少一个欧姆接触电耦合到n型半导体层。
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公开(公告)号：US20110073894A1
公开(公告)日：2011-03-31
申请号：US12955369
申请日：2010-11-29
申请人： Chang Hsin Chu , Chi Meng Lu , Yu Ju Chang , Kuo Hui Yu
发明人： Chang Hsin Chu , Chi Meng Lu , Yu Ju Chang , Kuo Hui Yu
摘要： In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.
摘要翻译： 在本发明的一个方面中，LED包括基板，n型半导体层，发光层，p型半导体层和顺序堆叠在基板上的透明导电层，p型和n型 电极。 p型半导体层具有粗糙的表面区域和至少一个平坦表面区域。 透明导电层具有分别对应于p型半导体层的粗糙表面区域和至少一个平坦表面区域的粗糙表面区域和平坦表面区域。 p型电极设置在透明导电层的平坦表面区域上。 n型电极电耦合到n型半导体层。
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公开(公告)号：US07821026B2
公开(公告)日：2010-10-26
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译： 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。
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公开(公告)号：US20090224272A1
公开(公告)日：2009-09-10
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译： 公开了一种发光二极管及其制造方法。 该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。
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