PHOTO SENSOR, MANUFACTURING METHOD THEREOF, AND DISPLAY PANEL

    公开(公告)号:US20220122370A1

    公开(公告)日:2022-04-21

    申请号:US16956962

    申请日:2020-04-02

    Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.

    DISPLAY PANEL, GATE ELECTRODE DRIVING CIRCUIT, AND ELECTRONIC DEVICE

    公开(公告)号:US20210408072A1

    公开(公告)日:2021-12-30

    申请号:US16769254

    申请日:2020-02-28

    Abstract: A display panel, a gate electrode driving circuit, and an electronic device are provided. The display panel includes a first metal layer including a first gate electrode; a second metal layer including a first source electrode, a first drain electrode, and a second gate electrode; two ends of a polycrystalline silicon semiconductor layer electrically connected to the first source electrode and the first drain electrode respectively; a third metal layer including a second source electrode and a second drain electrode; and two ends of a metal oxide semiconductor layer electrically connected to the second source electrode and the second drain electrode respectively.

    LTPS TYPE TFT AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20190333944A1

    公开(公告)日:2019-10-31

    申请号:US16086019

    申请日:2018-08-07

    Abstract: The present disclosure provides an LTPS type TFT and a method for manufacturing the same. The TFT includes a first contact hole and a second contact hole, where the first contact hole and the second contact hole pass through the third insulating layer, the second insulating layer, and a portion of the first insulating layer, such that a portion of the heavily doped area is exposed. In addition, a transparent electrode is electrically connected to the source/drain electrode or the second gate electrode and a portion of the heavily doped area.

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