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公开(公告)号：US20170294569A1
公开(公告)日：2017-10-12
申请号：US15091846
申请日：2016-04-06
摘要： A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.
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公开(公告)号：US09706634B2
公开(公告)日：2017-07-11
申请号：US14970738
申请日：2015-12-16
发明人： Shurong Liang , Costel Biloiu , Glen F. R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
IPC分类号： H01H1/24 , H05H1/24 , H01L21/3065 , H01L21/308 , H01L21/66
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
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