公开(公告)号：US20150325642A1

公开(公告)日：2015-11-12

申请号：US14806854

申请日：2015-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-I Yang ,  Shou-Wei Lee ,  Shao-Chi Yu ,  Hong-Seng Shue ,  Kun-Ming Huang ,  Po-Tao Chu

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/225 ,  H01L29/10 ,  H01L21/762 ,  H01L21/324

CPC classification number: H01L29/0634 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/308 ,  H01L21/324 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

Abstract: A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and electrically is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate.

公开(公告)号：US09093520B2

公开(公告)日：2015-07-28

申请号：US14011991

申请日：2013-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-I Yang ,  Shou-Wei Lee ,  Shao-Chi Yu ,  Hong-Seng Shue ,  Kun-Ming Huang ,  Po-Tao Chu

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0634 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/308 ,  H01L21/324 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

Abstract: A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate.

Abstract translation: 公开了一种高压超导装置。 该器件包括具有第一导电类型并且其中设置有相邻沟槽的半导体衬底区域。 相邻的沟槽各具有沟槽侧壁和沟槽底面。 具有第二导电类型的区域设置在沟槽中或邻近沟槽，并在p-n结处与半导体衬底区域相遇。 栅极电极形成在半导体衬底区域上，并通过栅极电介质与半导体衬底区域电隔离。 具有第二导电类型的主体区域设置在靠近半导体衬底的表面的栅电极的相对侧上。 具有第一导电类型的源极区域设置在靠近半导体衬底的表面的栅电极的相对侧的体区内。