公开(公告)号：US20190067200A1

公开(公告)日：2019-02-28

申请号：US16176547

申请日：2018-10-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsun-Ying Huang

IPC分类号： H01L23/538 ,  H01L21/768 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/525

摘要： In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a plurality of interconnect layers within an inter-level dielectric (ILD) structure disposed along a front-side of a substrate. A dielectric layer is arranged along a back-side of the substrate and a conductive bond pad is separated from the substrate by the dielectric layer. A back-side through-substrate-via (BTSV) extends through the substrate and the dielectric layer. A conductive bump is arranged over the conductive bond pad. The conductive bond pad has a substantially planar lower surface extending from over the BTSV to below the conductive bump. A BTSV liner separates sidewalls of the BTSV from the substrate. The sidewalls of the BTSV directly contact sides of both the BTSV liner and the dielectric layer.

公开(公告)号：US10163973B2

公开(公告)日：2018-12-25

申请号：US15461719

申请日：2017-03-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Feng-Kuei Chang ,  Keng-Yu Chou ,  Jen-Cheng Liu ,  Jeng-Shyan Lin

IPC分类号： H01L27/146 ,  G02B6/43 ,  G02B6/42

摘要： A method for forming an FSI image sensor device structure is provided. The method includes forming a pixel region in a substrate and forming a dielectric layer over the substrate. The method includes forming a trench through the dielectric layer, and the trench includes a top portion and a bottom portion, and the trench is directly above the pixel region. The method includes forming a protection layer in the bottom portion of the trench and enlarging a top width of the top portion of the trench, and the trench has a wide top portion and a narrow bottom portion. The wide top portion has top sidewall surfaces, the narrow bottom portion has bottom sidewall surfaces, and the top sidewall surfaces taper gradually toward the bottom sidewall surfaces. The method includes filling a transparent dielectric layer in the trench to form a light pipe.

公开(公告)号：US20180301486A1

公开(公告)日：2018-10-18

申请号：US15487593

申请日：2017-04-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Feng-Chi Hung ,  Jen-Cheng Liu ,  Ching-Chun Wang ,  Tse-Hua Lu

IPC分类号： H01L27/146

CPC分类号： H01L27/14614 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689

摘要： The image sensing device includes a pixel region in a pixel array area and a dummy pixel region in a periphery area. The pixel region includes a radiation region, a floating diffusion region, a transfer transistor, a source-follower transistor, a reset transistor and a select transistor. The dummy pixel region includes a radiation region and a floating diffusion region. A gate of one of the transfer transistor, the reset transistor and the select transistor in the pixel region is electrically connected to the radiation region or the floating diffusion region in the dummy pixel region.

公开(公告)号：US20170186796A1

公开(公告)日：2017-06-29

申请号：US14980225

申请日：2015-12-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Hsun-Ying Huang ,  Tzu-Hsuan Hsu

IPC分类号： H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

摘要： A frontside illuminated (FSI) image sensor with a reflector is provided. A photodetector is buried in a sensor substrate. A support substrate is arranged under and bonded to the sensor substrate. The reflector is arranged under the photodetector, between the sensor and support substrates, and is configured to reflect incident radiation towards the photodetector. A method for manufacturing the FSI image sensor and the reflector is also provided.

公开(公告)号：US09520433B1

公开(公告)日：2016-12-13

申请号：US14839617

申请日：2015-08-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Hung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Alexander Kalnitsky ,  Wen-De Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L21/76232 ,  H01L21/764 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

摘要： A method includes forming a deep trench isolation structure on a substrate, the substrate having a back surface opposite to a front surface, the deep trench isolation structure opening toward the front surface. An oxide layer is formed on the front surface of the substrate and sidewalls and bottom of the deep trench isolation structure. The oxide layer on the front surface of the substrate is removed. A portion of the substrate at the opening of the deep trench isolation structure is removed and an epitaxial layer is formed on the substrate.

摘要翻译： 一种方法包括在衬底上形成深沟槽隔离结构，所述衬底具有与前表面相对的后表面，所述深沟槽隔离结构朝向前表面开口。 在衬底的前表面和深沟槽隔离结构的侧壁和底部上形成氧化物层。 去除衬底前表面上的氧化物层。 在深沟槽隔离结构的开口处的衬底的一部分被去除并且在衬底上形成外延层。

公开(公告)号：US09374538B2

公开(公告)日：2016-06-21

申请号：US14486803

申请日：2014-09-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC分类号： H04N5/33 ,  H04N5/335 ,  G02B1/11 ,  H04N9/04

CPC分类号： H01L27/14621 ,  G02B1/11 ,  G02B5/201 ,  G02B5/208 ,  G02B5/22 ,  G02B5/282 ,  G02B27/1013 ,  G02B27/123 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/33 ,  H04N5/335 ,  H04N9/045 ,  H04N2209/042

摘要： An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

摘要翻译： 图像传感器包括基板，感光装置，滤色器层，微透镜层和红外滤光层。 感光装置设置在基板中。 滤色器层设置成覆盖感光装置。 微透镜层设置在滤色器层上。 红外滤光层直接覆盖微透镜层。

公开(公告)号：US20160163755A1

公开(公告)日：2016-06-09

申请号：US14564231

申请日：2014-12-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Chin Huang ,  Pao-Tung Chen ,  Wei-Chieh Chiang ,  Kazuaki Hashimoto ,  Jen-Cheng Liu

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/1469

摘要： An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

摘要翻译： 提供了具有将图像传感器芯片接合和/或电耦合到封装基板的侧壁互连结构的图像传感器芯片。 图像传感器芯片包括支撑被配置为感测入射光的集成电路（IC）的基板。 侧壁互连结构沿着衬底的侧壁布置并且与IC电耦合。 还提供了一种用于制造图像传感器芯片的方法和包括图像传感器芯片的图像传感器封装。

公开(公告)号：US11978758B2

公开(公告)日：2024-05-07

申请号：US17166387

申请日：2021-02-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/14 ,  H01L21/768 ,  H01L23/498 ,  H01L27/146 ,  H01L23/538

CPC分类号： H01L27/14687 ,  H01L21/76898 ,  H01L23/49827 ,  H01L27/14636 ,  H01L27/1469 ,  H01L21/76831 ,  H01L23/5384 ,  H01L27/14634 ,  H01L27/1464 ,  H01L2223/6622 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/13091 ,  H01L2924/00

摘要： Methods for forming via last through-vias. A method includes providing an active device wafer having a front side including conductive interconnect material disposed in dielectric layers and having an opposing back side; providing a carrier wafer having through vias filled with an oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; bonding the front side of the active device wafer to the second surface of the carrier wafer; etching the oxide in the through vias in the carrier wafer to form through oxide vias; and depositing conductor material into the through oxide vias to form conductors that extend to the active carrier wafer and make electrical contact to the conductive interconnect material. An apparatus includes a carrier wafer with through oxide vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer.

公开(公告)号：US20230387106A1

公开(公告)日：2023-11-30

申请号：US18359578

申请日：2023-07-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsing-Chih Lin

IPC分类号： H01L27/06 ,  H01L29/861 ,  H01L23/00 ,  H01L29/66 ,  H01L21/265 ,  H01L23/522

CPC分类号： H01L27/0676 ,  H01L28/40 ,  H01L29/861 ,  H01L24/08 ,  H01L29/66136 ,  H01L21/26513 ,  H01L23/5226 ,  H01L2224/08145

摘要： A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.

公开(公告)号：US20230369380A1

公开(公告)日：2023-11-16

申请号：US17740544

申请日：2022-05-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Y.C. Chang ,  Yen-Ting Chiang ,  Shyh-Fann Ting ,  Jen-Cheng Liu

IPC分类号： H01L27/146

CPC分类号： H01L27/14683 ,  H01L27/14643 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14636

摘要： The present disclosure describes an image sensor and a method for forming the image sensor. The image sensor includes an image sensing element disposed on a substrate, an extension pad disposed adjacent to the image sensing element, and a polysilicon pillar disposed on the extension pad. The image sensor further includes an insulating layer disposed over the image sensing element, the extension pad, and the polysilicon pillar.