知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

31 records (took 0.026 seconds)

    Mechanisms for forming image sensor device
    22.
    发明授权
    Mechanisms for forming image sensor device 有权
    用于形成图像传感器的机构

    公开(公告)号：US09431446B2

    公开(公告)日：2016-08-30

    申请号：US14135042

    申请日：2013-12-19

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Volume Chien ,  Fu-Cheng Chang ,  Yi-Hsing Chu ,  Shiu-Ko Jangjian ,  Chi-Cherng Jeng

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/1464

    Abstract: Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate. The image sensor device also includes an active region in the semiconductor substrate and surrounded by the isolation structure. The active region includes a light sensing region and a doped region, and the doped region has a horizontal length and a vertical length. A ratio of the horizontal length to the vertical length is in a range from about 1 to about 4.

    Abstract translation: 提供了用于形成图像传感器装置的机构的实施例。 图像传感器装置包括半导体衬底和半导体衬底中的隔离结构。 图像传感器装置还包括半导体衬底中的有源区并被隔离结构包围。 有源区包括光感测区和掺杂区，掺杂区具有水平长度和垂直长度。 水平长度与垂直长度的比率在约1至约4的范围内。

    Metal Shield Structure and Methods for BSI Image Sensors
    23.
    发明申请
    Metal Shield Structure and Methods for BSI Image Sensors 有权
    BSI图像传感器的金属屏蔽结构和方法

    公开(公告)号：US20140167197A1

    公开(公告)日：2014-06-19

    申请号：US13718688

    申请日：2012-12-18

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shiu-Ko JangJian ,  Chi-Cherng Jeng ,  Volume Chien ,  Ying-Lang Wang

    IPC: H01L31/0216 ,  H01L31/18

    CPC classification number: H01L27/14687 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/18

    Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.

    Abstract translation: 背面照明图像传感器结构包括与半导体衬底的第一侧相邻形成的图像传感器，其中在所述半导体衬底的第一侧上形成有互连层，形成在所述半导体衬底的第二侧上的背面照明膜， 形成在背面照明膜上的金属屏蔽层和嵌入在背面照明膜中并且连接在金属屏蔽层和半导体基板之间的通孔。

    Image sensor device with light guiding structure
    27.
    发明授权
    Image sensor device with light guiding structure 有权
    具有导光结构的图像传感器

    公开(公告)号：US09247116B2

    公开(公告)日：2016-01-26

    申请号：US14211636

    申请日：2014-03-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Volume Chien ,  Su-Hua Chang ,  Zen-Fong Huang ,  Chia-Yu Wei ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

    IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N5/225 ,  H01L31/062 ,  H01L31/113

    CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

    Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

    Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

    Semiconductor Wafer And Semiconductor Die
    28.
    发明申请
    Semiconductor Wafer And Semiconductor Die 有权
    半导体晶圆和半导体模具

    公开(公告)号：US20150170985A1

    公开(公告)日：2015-06-18

    申请号：US14109162

    申请日：2013-12-17

    Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

    Inventor： Hsi-Jung Wu ,  Volume Chien ,  Ying-Lang Wang ,  Hsin-Chi Chen ,  Ying-Hao Chen ,  Hung-Ta Huang

    IPC: H01L23/10 ,  H01L23/544 ,  H01L23/00

    CPC classification number: H01L23/562 ,  H01L21/784 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

    Abstract: A semiconductor wafer includes a substrate, an integrated circuit and a die seal ring structure. The substrate is with a die region, a die seal ring region surrounding the die region and a scribe line region surrounding the die seal ring region. The substrate includes a first surface and a second surface opposite to the first surface, and periodic recesses within the first surface of the die seal ring region, the scribe line region or both the die seal ring region and the scribe line region. The integrated circuit is located on the first surface and the second surface of the die region. The die seal ring structure is located on the second surface of the die seal ring region. A semiconductor die is also provided.

    Abstract translation: 半导体晶片包括基板，集成电路和模具密封环结构。 基板具有模具区域，围绕模具区域的模具密封环区域和围绕模具密封环区域的划线区域。 基板包括与第一表面相对的第一表面和第二表面，以及在模具密封环区域的第一表面，划线区域或模具密封环区域和划线区域内的周期性凹槽。 集成电路位于模具区域的第一表面和第二表面上。 模具密封环结构位于模具密封环区域的第二表面上。 还提供半导体管芯。

    Image sensor device
    30.
    发明授权
    Image sensor device 有权

    公开(公告)号：US11121166B2

    公开(公告)日：2021-09-14

    申请号：US16398133

    申请日：2019-04-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Volume Chien ,  Yun-Wei Cheng ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Chuan-Pu Liu

    IPC: H01L27/146

    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Patent Agency Ranking