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21.发明授权Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer 有权在使用蚀刻停止层的背面照明图像传感器中形成掩埋滤色器公开(公告)号：US09553118B2
公开(公告)日：2017-01-24
申请号：US14307781
申请日：2014-06-18
发明人： Yun-Wei Cheng , Chiu-Jung Chen , Volume Chien , Kuo-Cheng Lee , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.
摘要翻译： 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 缓冲层设置在衬底的第二侧上。 多个元件设置在缓冲层上。 元件和缓冲层具有不同的材料组成。 多个遮光结构分别设置在多个元件上。 辐射感测区域分别与由阻光结构，元件和缓冲层限定的多个开口对准。
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22.发明授权Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure 有权在具有ONO状结构的背面照明图像传感器中形成掩埋式滤色器公开(公告)号：US09543353B2
公开(公告)日：2017-01-10
申请号：US15168816
申请日：2016-05-31
发明人： Yun-Wei Cheng , Chiu-Jung Chen , Volume Chien , Kuo-Cheng Lee , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146 , H01L21/02 , H01L21/311
CPC分类号： H01L27/14685 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.
摘要翻译： 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个遮光结构设置在基板的第二侧上。 钝化层涂覆在每个遮光结构的顶表面和侧壁上。 多个间隔物设置在涂覆在遮光结构的侧壁上的钝化层的部分上。
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23.发明申请公开(公告)号：US20160276400A1
公开(公告)日：2016-09-22
申请号：US15168816
申请日：2016-05-31
发明人： Yun-Wei Cheng , Chiu-Jung Chen , Volume Chien , Kuo-Cheng Lee , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146 , H01L21/311 , H01L21/02
CPC分类号： H01L27/14685 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.
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公开(公告)号：US09406499B2
公开(公告)日：2016-08-02
申请号：US14178814
申请日：2014-02-12
发明人： Chen-Chun Chen , Chiu-Jung Chen , Fu-Tsun Tsai , Shiu-Ko Jangjian , Chi-Cherng Jeng , Hsin-Chi Chen
IPC分类号： H01L23/544 , H01L21/02 , H01L27/146
CPC分类号： H01L24/83 , H01L21/02019 , H01L21/0273 , H01L21/268 , H01L21/30604 , H01L21/76256 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L2224/29101 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/2919 , H01L2224/83201 , H01L2224/838 , H01L2224/83805 , H01L2224/8385 , H01L2224/83895 , H01L2224/83896 , H01L2924/07025
摘要： A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a plurality of recesses spaced from each other by the plurality of protrusions, and each of the plurality of recesses is extended from the periphery of the wafer and is elongated across the first surface of the wafer.
摘要翻译： 半导体结构包括：第一表面和周边的晶片，从第一表面突出的多个突起和由多个突起彼此间隔开的多个凹部，并且多个凹部中的每一个从周边延伸 并且延伸穿过晶片的第一表面。
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公开(公告)号：US20160111465A1
公开(公告)日：2016-04-21
申请号：US14981787
申请日：2015-12-28
IPC分类号： H01L27/146
CPC分类号： H01L27/14621 , H01L27/1462 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685
摘要： A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.
摘要翻译： 公开了一种形成图像传感器装置的方法。 该方法包括在像素区域中提供具有传感器元件的基板，并且在非像素区域中不具有传感器元件。 该方法还包括在像素区域上形成金属柱和在非像素区域上形成金属屏蔽层。 金属支柱设置在相邻传感器元件之间的空间之上。 该方法还包括在金属柱和金属屏蔽层之上沉积介电层; 并蚀刻介电层以形成第一和第二沟槽。 第一沟槽形成在像素区域上，并且第二沟槽形成在非像素区域上。 每个第一沟槽对准相应的传感器元件，并且在其底部和侧壁表面处被电介质层包围。
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26.发明申请METHOD AND APPARATUS FOR FORMING BACK SIDE ILLUMINATED IMAGE SENSORS WITH EMBEDDED COLOR FILTERS 有权形成具有嵌入式彩色滤光片的背面照明图像传感器的方法和装置公开(公告)号：US20150311247A1
公开(公告)日：2015-10-29
申请号：US14261472
申请日：2014-04-25
发明人： Chiu-Jung Chen , Yun-Wei Cheng , Volume Chien , Kuo-Cheng Lee , Chun-Hao Chou , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14698 , H01L2224/48463
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.
摘要翻译： 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 辐射感测区域被多个间隙隔开。 多个辐射阻挡结构设置在基板的第二侧上。 每个辐射阻挡结构与相应的一个间隙对准。 多个滤色器设置在辐射阻挡结构之间。
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公开(公告)号：US12009323B2
公开(公告)日：2024-06-11
申请号：US17873835
申请日：2022-07-26
发明人： Chia-Yu Wei , Cheng-Yuan Li , Yen-Liang Lin , Kuo-Cheng Lee , Hsun-Ying Huang , Hsin-Chi Chen
IPC分类号： H01L23/00 , H01L27/146
CPC分类号： H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/32 , H01L24/80 , H01L24/83 , H01L24/92 , H01L27/14607 , H01L27/14634 , H01L27/14636 , H01L27/14685 , H01L27/1469 , H01L2224/03019 , H01L2224/0346 , H01L2224/03845 , H01L2224/05567 , H01L2224/05571 , H01L2224/0603 , H01L2224/06135 , H01L2224/06136 , H01L2224/06177 , H01L2224/06517 , H01L2224/08146 , H01L2224/09517 , H01L2224/32145 , H01L2224/80075 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/83075 , H01L2224/83948 , H01L2224/9211
摘要： A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.
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公开(公告)号：US20220352307A1
公开(公告)日：2022-11-03
申请号：US17866772
申请日：2022-07-18
发明人： Gulbagh Singh , Kun-Tsang Chuang , Hsin-Chi Chen
IPC分类号： H01L29/06 , H01L27/11524 , H01L29/66 , H01L29/788
摘要： A semiconductor device includes a substrate, a gate oxide layer formed on the substrate, a gate formed on the gate oxide layer, and a spacer formed adjacent the gate and over the substrate. The spacer includes a void filled with air to prevent leakage of charge to and from the gate, thereby reducing data loss and providing better memory retention. The reduction in charge leakage results from reduced parasitic capacitances, fringing capacitances, and overlap capacitances due to the low dielectric constant of air relative to other spacer materials. The spacer can include multiple layers such as oxide and nitride layers. In some embodiments, the semiconductor device is a multiple-time programmable (MTP) memory device.
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29.发明申请公开(公告)号：US20220302187A1
公开(公告)日：2022-09-22
申请号：US17833217
申请日：2022-06-06
发明人： Chiu-Jung Chen , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Volume Chien , Yun-Wei Cheng
IPC分类号： H01L27/146
摘要： Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
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公开(公告)号：US20220285403A1
公开(公告)日：2022-09-08
申请号：US17827636
申请日：2022-05-27
发明人： Gulbagh Singh , Kuan-Liang Liu , Wang Po-Jen , Kun-Tsang Chuang , Hsin-Chi Chen
IPC分类号： H01L27/12 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/3105 , H01L21/762 , H01L21/84
摘要： A circuit includes a base silicon layer, a base oxide layer, a first top silicon layer, a second top silicon layer, a first semiconductor device, and a second semiconductor device. The base oxide layer is formed over the base silicon layer. The first top silicon layer is formed over a first region of the base oxide layer and has a first thickness. The second top silicon layer is formed over a second region of the base oxide layer and has a second thickness less than the first thickness. The first semiconductor device is formed over the first top silicon layer and the second semiconductor device is formed over the second top silicon layer. The ability to fabricate a top silicon layers with differing thicknesses can provide a single substrate having devices with different characteristics, such as having both fully depleted and partially depleted devices on a single substrate.
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