公开(公告)号：US11948954B1

公开(公告)日：2024-04-02

申请号：US18152369

申请日：2023-01-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Wen Huang ,  Chung-Liang Cheng ,  Ping-Hao Lin ,  Kuo-Cheng Lee

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14625 ,  H01L27/14634

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

公开(公告)号：US20240021009A1

公开(公告)日：2024-01-18

申请号：US18187891

申请日：2023-03-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Chien Hsieh ,  Yun-Wei Cheng ,  Kuo-Cheng Lee ,  Cheng-Ming Wu ,  Wei-Li Hu

IPC: G06V40/13 ,  G06V40/12 ,  H01L27/146

CPC classification number: G06V40/1318 ,  G06V40/1365 ,  G06V40/1353 ,  H01L27/14678 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627

Abstract: An image sensing apparatus is disclosed. The image sensing apparatus includes a pixel array and micro lenses disposed above the pixel array. The pixel array includes sensing pixels configured to capture minutia points of a fingerprint and positioning pixels configured to provide positioning codes.

公开(公告)号：US20230402330A1

公开(公告)日：2023-12-14

申请号：US18230664

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Chien Hsieh ,  Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Chun-Hao Lin ,  Ting-Hao Chang

IPC: H01L21/66 ,  H01L21/265 ,  H01L27/144

CPC classification number: H01L22/20 ,  H01L21/265 ,  H01L22/30 ,  H01L22/22 ,  H01L27/1443

Abstract: A method of manufacturing a semiconductor wafer is disclosed. The method includes exposing the semiconductor wafer to one or more dopant species to form one or more first implant layers on the semiconductor wafer, testing one or more geometric parameter values of the formed one or more first implant layers, after testing the one or more geometric parameter values, conditionally exposing the semiconductor wafer to one or more dopant species to form one or more additional implant layers on the semiconductor wafer, after forming the one or more additional implant layers, conditionally forming one or more additional circuit layers on the semiconductor wafer to form a plurality of functional electronic circuits on the semiconductor wafer, and conditionally testing the semiconductor wafer with a wafer acceptance test (WAT) operation.

公开(公告)号：US11824073B2

公开(公告)日：2023-11-21

申请号：US17397049

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/14645

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, and the first isolation structure has a first end portion in the substrate. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure surrounds a second portion of the light-sensing region, the second isolation structure has a second end portion in the substrate, and the second end portion of the second isolation structure is closer to the front surface of the substrate than the first end portion of the first isolation structure.

公开(公告)号：US20230197751A1

公开(公告)日：2023-06-22

申请号：US18166560

申请日：2023-02-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14621 ,  H01L27/14687 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14627

Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

公开(公告)号：US20220302187A1

公开(公告)日：2022-09-22

申请号：US17833217

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

公开(公告)号：US20220238585A1

公开(公告)日：2022-07-28

申请号：US17717495

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L27/146 ,  G02B5/30

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

公开(公告)号：US20220077206A1

公开(公告)日：2022-03-10

申请号：US17528542

申请日：2021-11-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US20220030158A1

公开(公告)日：2022-01-27

申请号：US17493752

申请日：2021-10-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H04N5/232 ,  H04N5/369 ,  H01L27/146 ,  H04N9/04

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US20180033820A1

公开(公告)日：2018-02-01

申请号：US15727716

申请日：2017-10-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu ,  Yun-Wei Cheng

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L2224/48463

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.