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    QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME
    22.
    发明申请
    QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210284908A1

    公开(公告)日：2021-09-16

    申请号：US17199616

    申请日：2021-03-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Jongmin LEE ,  Jooyeon AHN ,  Hyeyeon YANG ,  Shin Ae JUN

    IPC: C09K11/70 ,  H01L27/32 ,  C09K11/02

    Abstract: A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

    DISPLAY DEVICE
    23.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20200243622A1

    公开(公告)日：2020-07-30

    申请号：US16750106

    申请日：2020-01-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG DISPLAY CO., LTD. ,  SAMSUNG SDI CO., LTD.

    Inventor： Deukseok CHUNG ,  Sung Hun LEE ,  Tae Gon KIM ,  Shin Ae JUN

    IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

    Abstract: A display device includes a first electrode, a pixel define layer disposed on the first electrode, the pixel define layer including an opening, an organic emission layer disposed on the pixel define layer, the organic emission layer in electrical communication with the first electrode through the opening, a second electrode disposed on the organic emission layer, a light recycle layer disposed on the second electrode, and a color filter layer disposed on the light recycle layer, the color filter layer including a quantum dot, wherein a width of the organic emission layer is longer than a width of the color filter layer.

    SUBSTRATE SUPPORT UNIT AND PLASMA ETCHING APPARATUS HAVING THE SAME
    26.
    发明申请
    SUBSTRATE SUPPORT UNIT AND PLASMA ETCHING APPARATUS HAVING THE SAME 审中-公开
    基板支撑单元和等离子体蚀刻装置

    公开(公告)号：US20140224426A1

    公开(公告)日：2014-08-14

    申请号：US14168258

    申请日：2014-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Kyung Hyun HAN ,  Yun Kwang JEON

    IPC: H01L21/02

    CPC classification number: H01L21/68735 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32642

    Abstract: A substrate support unit of an etching process chamber includes a substrate support portion configured to support a substrate, a cathode under the substrate support portion, the cathode including an upper surface portion under the substrate support portion, the upper surface portion being smaller than a size of the substrate, and a step portion positioned a step downward from an edge portion of the upper surface portion, and a focus ring at an edge portion of the substrate, the focus ring being on the step portion and encompassing a side wall of the step portion and an edge portion of the substrate, the focus ring being configured to make a uniform distribution of an electric field on the substrate.

    Abstract translation: 蚀刻处理室的基板支撑单元包括被配置为支撑基板的基板支撑部分，在基板支撑部分下方的阴极，阴极包括在基板支撑部分下方的上表面部分，上表面部分小于尺寸 以及从所述上表面部分的边缘部分向下定位的台阶部分和在所述基板的边缘部分处的聚焦环，所述聚焦环位于所述台阶部分上并且包围所述台阶部分的侧壁 部分和边缘部分，所述聚焦环被配置为使得基底上的电场均匀分布。

    DISPLAY PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME
    29.
    发明申请
    DISPLAY PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220285446A1

    公开(公告)日：2022-09-08

    申请号：US17687451

    申请日：2022-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Shin Ae JUN ,  Deukseok CHUNG ,  Nayoun WON ,  Sung Hun LEE ,  Byoung Ki CHOI

    IPC: H01L27/32 ,  H01L51/56 ,  C09K11/88 ,  C09K11/56

    Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A≤about 0.6 A and B are as defined.

    LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME
    30.
    发明申请
    LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220283345A1

    公开(公告)日：2022-09-08

    申请号：US17687448

    申请日：2022-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taekhoon KIM ,  Tae Gon KIM ,  Hyeyeon YANG ,  Jongmin LEE ,  Shin Ae JUN ,  Deuk Kyu MOON ,  A Ra JO ,  Jooyeon AHN ,  Nayoun WON ,  Mi Hye LIM

    IPC: G02B5/20 ,  G02B1/00

    Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal. The emitted green light has a full width at half maximum of a maximum luminescent peak of less than or equal to about 42 nm.

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