公开(公告)号：US11981848B2

公开(公告)日：2024-05-14

申请号：US17238538

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jun Park ,  Junghwa Kim ,  Tae Gon Kim ,  Taekhoon Kim ,  Young Mo Sung ,  Nayoun Won ,  Dongjin Yun ,  Mi Hye Lim ,  Shin Ae Jun ,  Hyeonsu Heo

IPC: C09K11/56 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/565 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

公开(公告)号：US20230299115A1

公开(公告)日：2023-09-21

申请号：US18186402

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chul Joon Heo

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14647 ,  H01L31/035209

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

公开(公告)号：US11713952B2

公开(公告)日：2023-08-01

申请号：US16875188

申请日：2020-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Sung Jun Park ,  Hiromasa Shibuya ,  Sung Young Yun ,  Gae Hwang Lee ,  Yong Wan Jin ,  Chui Joon Heo

IPC: H10K30/30 ,  F42B35/00 ,  G02B21/18 ,  G06T7/00 ,  H10K85/60 ,  H10K85/20

CPC classification number: F42B35/00 ,  G02B21/18 ,  G06T7/0004 ,  H10K85/621 ,  H10K85/6572 ,  H10K30/30 ,  H10K85/211

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same.




Definitions of Chemical Formula 1 are the same as defined in the detailed description.