Semiconductor device and method of fabricating the same

    公开(公告)号:US10032641B2

    公开(公告)日:2018-07-24

    申请号:US15137946

    申请日:2016-04-25

    CPC classification number: H01L21/31 H01L21/823431 H01L27/0886

    Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

    SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
    23.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20150145056A1

    公开(公告)日:2015-05-28

    申请号:US14565903

    申请日:2014-12-10

    Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

    Abstract translation: 一种半导体器件,包括:设置在衬底的周边区域中的第一栅极图案; 设置在所述基板的单元区域中的第二栅极图案; 形成在第一栅极图案的侧壁上的第一绝缘体; 以及形成在所述第二栅极图案的侧壁上的第二绝缘体,其中所述第一绝缘体的介电常数不同于所述第二绝缘体的介电常数,并且其中所述第二绝缘体的高度大于所述第二栅极图案的高度 。

    METHOD AND ELECTRONIC DEVICE FOR WIRELESS CONNECTION
    24.
    发明申请
    METHOD AND ELECTRONIC DEVICE FOR WIRELESS CONNECTION 审中-公开
    用于无线连接的方法和电子设备

    公开(公告)号:US20150042589A1

    公开(公告)日:2015-02-12

    申请号:US14458180

    申请日:2014-08-12

    Abstract: A method in an electronic device includes receiving an input pattern, identifying a pattern identification (ID) from the input pattern, determining a counterpart electronic device corresponding to the pattern ID, and establishing a wireless connection with the corresponding electronic device. An electronic device includes a wireless communication unit configured to perform wireless communication with one or more other electronic devices, a pattern input unit configured to receive an input pattern, and a processor configured to identify a pattern from the input pattern, determine a counterpart electronic device with an ID corresponding to the pattern, and cause the wireless communication unit to wirelessly connect with the counterpart electronic device. Also, other embodiments are disclosed.

    Abstract translation: 电子设备中的方法包括接收输入图案,从输入图案识别图案识别(ID),确定对应于图案ID的对应电子设备,以及建立与对应的电子设备的无线连接。 一种电子设备,包括被配置为与一个或多个其他电子设备进行无线通信的无线通信单元,被配置为接收输入模式的模式输入单元和被配置为从输入模式识别模式的处理器,确定对方的电子设备 具有与图案对应的ID,并且使无线通信单元与对方电子设备无线连接。 而且,还公开了其它实施例。

    Storage device having encryption
    25.
    发明授权

    公开(公告)号:US11644983B2

    公开(公告)日:2023-05-09

    申请号:US17514059

    申请日:2021-10-29

    CPC classification number: G06F3/0622 G06F3/0655 G06F3/0679

    Abstract: A storage device includes a non-volatile memory configured to store an encryption key and a data key encrypted with the encryption key, writes data using the data key, and reads the data using the data key; and a storage controller, wherein the storage controller is configured to receive a first security setting command which allows access to the data key, using a first password, generates a first key on the basis of the first password in response to the first security setting command, encrypts the encryption key with the first key to generate a first encrypted encryption key, encrypts the first key with the encryption key to generate an encrypted first key, and stores the first encrypted encryption key and the encrypted first key in the non-volatile memory.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    26.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20160380050A1

    公开(公告)日:2016-12-29

    申请号:US15137946

    申请日:2016-04-25

    CPC classification number: H01L21/31 H01L21/823431 H01L27/0886

    Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

    Abstract translation: 如下提供半导体器件。 第一鳍型图案设置在基板上。 第一场绝缘膜与第一鳍型图案的侧壁相邻。 第二场绝缘膜与第一场绝缘膜的侧壁相邻。 第一场绝缘膜介于第一鳍型和第二场绝缘膜之间。 第二场绝缘膜包括第一区域和第二区域。 第一区域更靠近第一场绝缘膜的侧壁。 从第二场绝缘膜的底部到第二区域的上表面的高度大于从第二场绝缘膜的底部到第一区域的上表面的高度。

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