公开(公告)号：US20240192071A1

公开(公告)日：2024-06-13

申请号：US18529598

申请日：2023-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Jihwan Park ,  Kuntack Lee

IPC: G01L9/12

CPC classification number: G01L9/12 ,  H01L21/67051

Abstract: A baffle inspection apparatus is provided and includes: a baffle including a spray surface configured to receive and spray fluid; an upper vessel coupled to the baffle such that the spray surface of the baffle faces downwards; an upper plate above the upper vessel and supporting the upper vessel; a lower vessel below the upper vessel and apart from the upper vessel and the upper plate; a pressure measurement sensor on an upper surface of the lower vessel; a lower plate on a lower surface of the lower vessel and supporting the lower vessel; and a support that supports the upper plate and the lower plate. The upper vessel includes a flow path pipe that is configured to supply the fluid to the baffle so that the fluid is sprayed from the spray surface of the baffle.

公开(公告)号：US20240178024A1

公开(公告)日：2024-05-30

申请号：US18520047

申请日：2023-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihwan Park ,  Kuntack Lee

IPC: H01L21/67

CPC classification number: H01L21/67259 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67253 ,  H01L21/0274

Abstract: Provided is a substrate processing apparatus including a processing container having a processing space, a substrate support configured to support a substrate, a fluid supplier configured to supply a processing fluid in a supercritical state to the processing space, a shower head assembly configured to diffuse the processing fluid, a first laser portion configured to measure a horizontal alignment between the processing container and the shower head assembly, a second laser portion configured to measure a vertical alignment between the processing container and the shower head assembly, and a controller configured to correct the position of one of the substrate, the shower head assembly, and the processing container, based on the measured horizontal and vertical alignments, wherein the first and second laser portions are configured to be positioned within the processing container and to move above the substrate.

公开(公告)号：US20230062447A1

公开(公告)日：2023-03-02

申请号：US17735723

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US20230004089A1

公开(公告)日：2023-01-05

申请号：US17673978

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: G03F7/16

Abstract: An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

公开(公告)号：US20220199440A1

公开(公告)日：2022-06-23

申请号：US17381507

申请日：2021-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seohyun Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/677 ,  G03F7/20

Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

公开(公告)号：US20180366349A1

公开(公告)日：2018-12-20

申请号：US15848481

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US09934959B2

公开(公告)日：2018-04-03

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin Cho ,  Jung-Min Oh ,  Yongmyung Jun ,  Yongsun Ko ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

公开(公告)号：US09831081B2

公开(公告)日：2017-11-28

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

公开(公告)号：US20170084469A1

公开(公告)日：2017-03-23

申请号：US15368988

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US09534839B2

公开(公告)日：2017-01-03

申请号：US13707253

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: F26B5/04 ,  H01L21/67

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。