RESIST COMPOSITION
    21.
    发明申请

    公开(公告)号:US20210263411A1

    公开(公告)日:2021-08-26

    申请号:US16991281

    申请日:2020-08-12

    Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

    FOLDABLE ELECTRONIC DEVICE INCLUDING A PLURALITY OF FINGERPRINT SENSORS

    公开(公告)号:US20220374054A1

    公开(公告)日:2022-11-24

    申请号:US17715165

    申请日:2022-04-07

    Abstract: According to certain embodiments, a foldable electronic device comprises: a first housing; a hinge; a second housing coupled to the first housing by the hinge; a first display disposed on a front surface of the first housing, and a second display disposed on a front surface of the second housing; a sensor mounting module disposed in the second housing; a first fingerprint sensor that is mounted on the sensor mounting module and disposed between the front surface of the second housing and the second display; and a second fingerprint sensor that is mounted on the sensor mounting module and is disposed on a rear surface of the second housing.

    PHOTORESIST COMPOSITIONS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

    公开(公告)号:US20220252976A1

    公开(公告)日:2022-08-11

    申请号:US17567956

    申请日:2022-01-04

    Abstract: Photoresist compositions may include a metal structure, a radical quencher including a phenolic compound, a photobase generator, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed on a lower film using the photoresist composition. A first area, which is a portion of the photoresist film, is exposed to form a metal network from the metal structure in the first area of the photoresist film, a base is generated from the photobase generator in the first area of the photoresist film, and the radical quencher is deactivated using the base in the first area of the photoresist film. The photoresist film is developed to form a photoresist pattern including the first area. The lower film is processed using the photoresist pattern.

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