公开(公告)号：US20160197265A1

公开(公告)日：2016-07-07

申请号：US14981391

申请日：2015-12-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 写入电流产生焦耳加热，使得自由层具有大于室温的开关温度。 自由层包括温度敏感且具有至少一个双层的多层。 每个双层包括第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括磁性层。 该多层膜具有室温矫顽力和切换温度矫顽力。 开关温度矫顽力不超过室温矫顽力的一半。