公开(公告)号：US20230128165A1

公开(公告)日：2023-04-27

申请号：US17970223

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang ,  Dongkyun Kim ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L25/075 ,  H01L33/00

Abstract: Provided is a micro semiconductor chip transfer substrate including a base substrate, guide rails provided on the base substrate extending in a direction parallel to each other and spaced apart from each other, and a plurality of grooves provided in the base substrate between the guide rails and configured to accommodate micro semiconductor chips.

公开(公告)号：US20230064207A1

公开(公告)日：2023-03-02

申请号：US17982347

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junsik Hwang ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L25/16

Abstract: Provided is a method of fabricating a hybrid element substrate, the method including forming a plurality of first elements on a first substrate which is a silicon substrate or a silicon-on-insulator (SOI) substrate; forming a plurality of second elements on a second substrate which has a material different from a material of the first substrate; separating a plurality of second elements from the second substrate; primarily transferring the plurality of second elements onto a transfer substrate comprising a plurality of grooves by a fluidic self-assembly method such that the plurality of second elements are arranged in the plurality of grooves of the transfer substrate, respectively; and secondarily transferring, onto the first substrate, the plurality of second elements transferred onto the transfer substrate such that the plurality of second elements are next to the first elements on the first substrate and spaced apart from each other, or overlap upper portions of the first elements, respectively.

公开(公告)号：US20220344542A1

公开(公告)日：2022-10-27

申请号：US17591772

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Seogwoo Hong ,  Kyungwook Hwang ,  Dongho Kim ,  Joonyong Park ,  Junsik Hwang

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075

Abstract: A light-emitting device may include a light-emitting cell emitting first-color light and second-color light, an insulating layer having a flat upper surface while covering the light-emitting cell, a first trench exposing a first semiconductor layer, a second trench exposing a second semiconductor layer, a first electrode in contact with the first semiconductor layer, a second electrode in contact with the second semiconductor layer, and a third electrode in contact with a third semiconductor layer.

公开(公告)号：US11437293B2

公开(公告)日：2022-09-06

申请号：US16928159

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Kim ,  Jongbo Shim ,  Hwanpil Park ,  Jangwoo Lee

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

公开(公告)号：US20220246675A1

公开(公告)日：2022-08-04

申请号：US17591934

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Seogwoo HONG ,  Junsik Hwang ,  Dongho Kim ,  Hyunjoon KIM ,  Joonyong PARK

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/42

Abstract: Provided is a light-emitting device including a plurality of light-emitting cells, each of the plurality of light-emitting cells being configured to independently emit light, a common semiconductor layer provided on the plurality of light-emitting cells, a first electrode provided on the common semiconductor layer, and a plurality of second electrodes provided spaced apart from the first electrode and respectively provided on the plurality of light-emitting cells.

公开(公告)号：US20220246448A1

公开(公告)日：2022-08-04

申请号：US17469390

申请日：2021-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong Park ,  Dongho Kim ,  Hyunjoon Kim ,  Seogwoo Hong ,  Kyungwook Hwang ,  Junsik Hwang

IPC: H01L21/67 ,  H01L21/673 ,  H01L33/00

Abstract: Provided is a dispenser for a solution including a reservoir configured to hold a suspension of micro light-emitting diodes (LEDs) suspended in a solvent; a stirrer configured to stir the suspension in the reservoir; a discharge path including a first valve configured to control outflow of the suspension from the reservoir; a filling path including a second valve configured to control inflow of the suspension into the reservoir; a hydraulic path including a third valve configured to control a pressure inside the reservoir; and a washing path connected to the first valve and configured to input a washing fluid for washing the discharge path into the discharge path, wherein the first valve includes a multi-way valve configured to selectively connect the discharge path to one of the reservoir and the washing path.

公开(公告)号：US11075181B2

公开(公告)日：2021-07-27

申请号：US16418036

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hoon Han ,  Dong-Wan Kim ,  Dongho Kim ,  Jaewon Seo

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/67

Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

公开(公告)号：US09902900B2

公开(公告)日：2018-02-27

申请号：US14538556

申请日：2014-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Kyungsang Cho ,  Dongho Kim ,  Heejae Chung

IPC: H01B1/10 ,  C09K11/02 ,  B82Y30/00 ,  C09K11/56 ,  C09K11/88 ,  B82Y40/00

CPC classification number: C09K11/02 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/565 ,  C09K11/883 ,  Y10S977/774 ,  Y10S977/897 ,  Y10S977/932

Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.

公开(公告)号：US09867544B2

公开(公告)日：2018-01-16

申请号：US14821933

申请日：2015-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho Kim

IPC: A61B5/00 ,  H01L31/0304 ,  G01J3/51 ,  G01J3/02 ,  G01J3/10 ,  G01J3/32 ,  G01J3/42 ,  G01J3/44 ,  H01L31/103 ,  G01J3/12

CPC classification number: A61B5/0075 ,  G01J3/0205 ,  G01J3/0227 ,  G01J3/0256 ,  G01J3/0259 ,  G01J3/0272 ,  G01J3/10 ,  G01J3/32 ,  G01J3/42 ,  G01J3/44 ,  G01J3/4406 ,  G01J3/51 ,  G01J2003/1213 ,  G01J2003/1226 ,  H01L31/1035

Abstract: Provided are a spectrometer that may be easily manufactured while having high resolution and sensitivity due to reduced light loss and a non-invasive biometric sensor including the spectrometer. The spectrometer includes: a stacked light absorbing structure including a plurality of absorbing layers stacked in a vertical direction and having different absorption wavelength bands, and a plurality of tunnel junction layers respectively interposed between the plurality of absorbing layers to electrically connect the plurality of absorbing layers; and an illuminating unit configured to provide the stacked light absorbing structure with an illumination light for saturation of the plurality of absorbing layers.

公开(公告)号：US12282249B2

公开(公告)日：2025-04-22

申请号：US17859288

申请日：2022-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kisung Kim ,  Donggon Woo ,  Heejun Lee ,  Dongho Kim

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/00

Abstract: A full-chip cell critical dimension (CD) correction method and a method of manufacturing a mask by using the same are provided. The full-chip cell CD correction method includes receiving a database (DB) about a full-shot; analyzing a hierarchy of the DB; generating a density map of a full-chip by using the DB and converting the density map into a retarget rule table, the converting including mapping the density map by using a density rule; reconfiguring cell blocks of the full-chip into an optical proximity correction (OPC) target cell layout for OPC; applying a first bias to the OPC target cell layout, based on the retarget rule table; and generating an optical proximity corrected (OPC'ed) layout for the full-chip by performing hierarchical OPC.