公开(公告)号：US12282249B2

公开(公告)日：2025-04-22

申请号：US17859288

申请日：2022-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kisung Kim ,  Donggon Woo ,  Heejun Lee ,  Dongho Kim

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/00

Abstract: A full-chip cell critical dimension (CD) correction method and a method of manufacturing a mask by using the same are provided. The full-chip cell CD correction method includes receiving a database (DB) about a full-shot; analyzing a hierarchy of the DB; generating a density map of a full-chip by using the DB and converting the density map into a retarget rule table, the converting including mapping the density map by using a density rule; reconfiguring cell blocks of the full-chip into an optical proximity correction (OPC) target cell layout for OPC; applying a first bias to the OPC target cell layout, based on the retarget rule table; and generating an optical proximity corrected (OPC'ed) layout for the full-chip by performing hierarchical OPC.