公开(公告)号：US20140183522A1

公开(公告)日：2014-07-03

申请号：US14063774

申请日：2013-10-25

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Yong Su Lee ,  Yoon Ho Khang ,  Hyun Jae Na ,  Se Hwan Yu ,  Jong Chan Lee ,  Dong Hwan Shim

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region.

Abstract translation: 一种薄膜晶体管阵列面板，包括基板; 设置在所述基板上并且包括设置在所述基板上的氧化物半导体的沟道区; 连接到所述氧化物半导体并且以所述氧化物半导体为中心的两侧面对的源电极和漏电极; 设置在所述氧化物半导体上的绝缘层; 以及设置在所述绝缘层上的栅电极。 漏极包括第一漏区和第二漏区; 第一漏极区域的电荷迁移率大于第二漏极区域的电荷迁移率，源电极包括第一源极区域和第二源极区域，并且第一源极区域的电荷迁移率大于第二源极区域的电荷迁移率 。

公开(公告)号：US20140138684A1

公开(公告)日：2014-05-22

申请号：US14166183

申请日：2014-01-28

Applicant: Samsung Display Co., Ltd.

Inventor： YONG SU LEE ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang

IPC: H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract translation: 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。

公开(公告)号：US11793060B2

公开(公告)日：2023-10-17

申请号：US17455477

申请日：2021-11-18

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H10K71/00 ,  H01L27/12 ,  H10K59/131

CPC classification number: H10K71/00 ,  H01L27/124 ,  H01L27/1222 ,  H01L27/1255 ,  H10K59/131 ,  H01L27/1225

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US11594639B2

公开(公告)日：2023-02-28

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20220077436A1

公开(公告)日：2022-03-10

申请号：US17455477

申请日：2021-11-18

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H01L51/56 ,  H01L27/12 ,  H01L27/32

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US09899634B2

公开(公告)日：2018-02-20

申请号：US14708049

申请日：2015-05-08

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H01L29/08 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L51/56 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US09620609B2

公开(公告)日：2017-04-11

申请号：US14830091

申请日：2015-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L33/34

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

公开(公告)号：US09219085B2

公开(公告)日：2015-12-22

申请号：US14508766

申请日：2014-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L27/1248 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.

Abstract translation: 一种薄膜晶体管阵列面板和能够形成由不同材料制成的绝缘层的制造方法，用于与氧化物半导体和第二部分接触的部分，而不需要额外的工艺。 薄膜晶体管的源极和漏极各自包括下层和上层。 第一钝化层接触源电极和漏电极的下层，但不接触源极和漏极的上层，并且第二钝化层设置在源极和漏极的上层。 第一钝化层可以由氧化硅制成，并且第二钝化可以由氮化硅制成。

公开(公告)号：US20150171114A1

公开(公告)日：2015-06-18

申请号：US14279204

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan CHO ,  Su-Hyoung Kang ,  Yoon Ho Khang ,  Young Ki Shin ,  Myoung Geun Cha

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor and a display device having the thin film transistor capable of reducing the voltage between the source and drain electrodes of the thin film transistor are disclosed. One inventive aspect includes a gate electrode, a semiconductor pattern, a source electrode and a drain electrode. The source and drain electrodes are formed on the semiconductor pattern and spaced apart from each other. At least one of the source electrode and the drain electrode does not overlap the gate electrode.

Abstract translation: 公开了一种薄膜晶体管和具有能够降低薄膜晶体管的源极和漏极之间的电压的薄膜晶体管的显示装置。 本发明的一个方面包括栅电极，半导体图案，源电极和漏电极。 源极和漏极形成在半导体图案上并彼此间隔开。 源电极和漏电极中的至少一个不与栅电极重叠。

公开(公告)号：US11245102B2

公开(公告)日：2022-02-08

申请号：US16985376

申请日：2020-08-05

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H01L51/56 ,  H01L27/12 ,  H01L27/32

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.