公开(公告)号：US09543336B2

公开(公告)日：2017-01-10

申请号：US14963769

申请日：2015-12-09

Applicant: Samsung Display Co., Ltd.

Inventor： Masataka Kano ,  Ji Hun Lim ,  Yeon Keon Moon ,  Jun Hyung Lim ,  So Young Koo ,  Myoung Hwa Kim

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L27/1248 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/788

Abstract: A thin-film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a first self-assembled monolayer disposed on the first gate electrode, a gate insulating layer disposed on the first self-assembled monolayer, a semiconductor disposed on the gate insulating layer, a drain electrode overlapping the semiconductor, the drain electrode being separated from and facing a source electrode with respect to the semiconductor, a first interlayer insulating layer disposed on the source electrode and the drain electrode, a second self-assembled monolayer disposed on the first interlayer insulating layer, a second gate electrode disposed on the second self-assembled monolayer, a second interlayer insulating layer disposed on the second gate electrode, and a pixel electrode disposed on the second interlayer insulating layer and connected to the drain electrode.

Abstract translation: 薄膜晶体管阵列面板包括基板，设置在基板上的第一栅极电极，设置在第一栅电极上的第一自组装单层，设置在第一自组装单层上的栅极绝缘层，设置在第一自组装单层上的半导体 所述栅极绝缘层，与所述半导体重叠的漏电极，所述漏电极相对于所述半导体分离并面对源电极，设置在所述源电极和所述漏电极上的第一层间绝缘层，第二自组装单层 设置在第一层间绝缘层上的第二栅电极，设置在第二自组装单层上的第二栅电极，设置在第二栅电极上的第二层间绝缘层，以及设置在第二层间绝缘层上并连接到漏极的像素电极 。