公开(公告)号：US20200234654A1

公开(公告)日：2020-07-23

申请号：US16739012

申请日：2020-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Masataka Kano ,  Yeon Keon Moon ,  Joon Seok Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L51/52 ,  H01L51/56

Abstract: A display device including: a pixel connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor which controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first active layer including an oxide semiconductor doped with a metal.

公开(公告)号：US20160013257A1

公开(公告)日：2016-01-14

申请号：US14793966

申请日：2015-07-08

Applicant: Samsung Display Co., Ltd

Inventor： SOYOUNG KOO ,  Myounghwa Kim ,  Sangho Park ,  Jun Hyung Lim ,  Masataka Kano

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.

Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。

公开(公告)号：US11335707B2

公开(公告)日：2022-05-17

申请号：US16371433

申请日：2019-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoung Seok Son ,  Myounghwa Kim ,  Jaybum Kim ,  Yeon Keon Moon ,  Masataka Kano

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US10892308B2

公开(公告)日：2021-01-12

申请号：US16789107

申请日：2020-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US09412771B2

公开(公告)日：2016-08-09

申请号：US14793966

申请日：2015-07-08

Applicant: Samsung Display Co., Ltd

Inventor： Soyoung Koo ,  Myounghwa Kim ,  Sangho Park ,  Jun Hyung Lim ,  Masataka Kano

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L29/24

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.

Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。

公开(公告)号：US11950487B2

公开(公告)日：2024-04-02

申请号：US16562729

申请日：2019-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Kyoung Seok Son ,  Jun Hyung Lim ,  Masataka Kano

IPC: H10K71/00 ,  H10K59/123 ,  H10K59/124 ,  H10K71/20 ,  H10K102/10

CPC classification number: H10K71/00 ,  H10K59/123 ,  H10K59/124 ,  H10K71/231 ,  H10K2102/102 ,  H10K2102/103

Abstract: A display apparatus including a base substrate, a first thin film transistor disposed on the base substrate, a via insulation layer disposed on the first thin film transistor, and a light emitting structure disposed on the via insulation layer. The first thin film transistor includes a first gate electrode, an oxide semiconductor overlapped with the first gate electrode, and including tin (Sn), an etch stopper disposed on the oxide semiconductor and including an oxide semiconductor material which does not include tin (Sn), a first source electrode making contact with the oxide semiconductor, and a first drain electrode making contact with the oxide semiconductor, and spaced apart from the first source electrode.

公开(公告)号：US10593739B2

公开(公告)日：2020-03-17

申请号：US16133404

申请日：2018-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20160300526A1

公开(公告)日：2016-10-13

申请号：US14926922

申请日：2015-10-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Yeon Keon Moon ,  Masataka Kano ,  Jun Hyung Lim

IPC: G09G3/32 ,  G09G3/36

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2320/043

Abstract: A display device includes: a plurality of pixels, wherein each of the plurality of pixels includes at least two double-gate transistors including a first gate electrode and a second gate electrode; conduction between source electrodes and drain electrodes of the at least two double-gate transistors is controlled by a voltage applied to the first gate electrode, and electrical connection between the second gate electrode and the first gate electrode of each of the at least two double-gate transistors is determined depending on a polarity of a voltage applied on average to each of the at least two double-gate transistors.

Abstract translation: 显示装置包括：多个像素，其中所述多个像素中的每一个包括至少两个包括第一栅电极和第二栅电极的双栅晶体管; 所述至少两个双栅极晶体管的源电极和漏电极之间的导通由施加到所述第一栅电极的电压以及所述至少两个双栅极晶体管中的每一个的所述第二栅电极和所述第一栅电极之间的电连接来控制， 取决于对至少两个双栅极晶体管中的每一个平均施加的电压的极性来确定栅极晶体管。

公开(公告)号：US12262593B2

公开(公告)日：2025-03-25

申请号：US18412760

申请日：2024-01-15

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L21/78 ,  H01L27/12 ,  H10K50/11 ,  H10K50/844 ,  H10K59/121 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10 ,  H10K59/12 ,  H10K102/00

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US11887991B2

公开(公告)日：2024-01-30

申请号：US17745427

申请日：2022-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myounghwa Kim ,  Jaybum Kim ,  Yeon Keon Moon ,  Masataka Kano

IPC: H01L27/12 ,  H10K59/122 ,  H10K59/123

CPC classification number: H01L27/1218 ,  H01L27/127 ,  H01L27/1225 ,  H10K59/122 ,  H10K59/123

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.