Abstract:
An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.
Abstract:
The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0.25 or more for light having a wavelength of 405 nm, thereby preventing degradation of the organic emission layer by blocking the light of the harmful wavelength region and providing the organic light emitting diode in which a blue emission efficiency is not deteriorated.
Abstract:
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
Abstract:
The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0.25 or more for light having a wavelength of 405 nm, thereby preventing degradation of the organic emission layer by blocking the light of the harmful wavelength region and providing the organic light emitting diode in which a blue emission efficiency is not deteriorated.
Abstract:
A light emitting diode according to an exemplary embodiment of the present invention includes: a first electrode; a second electrode overlapping the first electrode; an emission layer disposed between the first electrode and the second electrode; and a capping layer disposed on the second electrode, wherein the capping layer satisfies Equation 1 below. n*k(λ=405 nm)≦0.8. Equation 1 In Equation 1, n*k (λ=405 nm) represents an optical value that is a product of a refractive index and an absorption coefficient in a 405 nanometer wavelength.
Abstract:
An organic light emitting diode (OLED) display according to the present disclosure includes a substrate, a thin film transistor on the substrate, a first electrode on the thin film transistor and electrically coupled to the thin film transistor, an organic emission layer on the first electrode, a second electrode on the organic emission layer, and a capping layer on the second electrode, wherein a thickness of the second electrode is about 65 Å to about 125 Å, and wherein a thickness of the capping layer is about (500*1.88/n) Å to about (700*1.88/n) Å, n being an optical constant of the capping layer.
Abstract:
An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.
Abstract:
An organic light emitting diode includes: a first electrode and a second electrode that face each other; a middle layer on the first electrode; a hole transport layer on the middle layer; and an emission layer between the hole transport layer and the second electrode, wherein the middle layer includes a bipolar material formed by combining a first material including at least selected from a group 1 element, a group 2 element, a lanthanide metal, with a second material including a halogen element.
Abstract:
An organic light emitting diode display includes a display substrate including a first substrate and a plurality of pixel light emitting units on the first substrate, and an encapsulation substrate including a second substrate facing the display substrate, and a main reflecting member on the second substrate, the main reflecting member including a light emitting opening at a position corresponding to at least one of the pixel light emitting units, and an auxiliary opening dividing the main reflecting member into a plurality of sub-reflecting members.
Abstract:
The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0.25 or more for light having a wavelength of 405 nm, thereby preventing degradation of the organic emission layer by blocking the light of the harmful wavelength region and providing the organic light emitting diode in which a blue emission efficiency is not deteriorated.