公开(公告)号：US09502445B2

公开(公告)日：2016-11-22

申请号：US14809372

申请日：2015-07-27

Applicant: Samsung Display Co., Ltd.

Inventor： Je-Hun Lee ,  Ki-Won Kim ,  Do-Hyun Kim ,  Woo-Geun Lee ,  Kap-Soo Yoon

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786 ,  H01L29/45 ,  H01L23/532 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

公开(公告)号：US09281406B2

公开(公告)日：2016-03-08

申请号：US14458415

申请日：2014-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Won Kim ,  Kap Soo Yoon ,  Jiyun Hong

IPC: H01L23/544 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

Abstract: A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.

Abstract translation: 制造薄膜晶体管基板的方法包括在绝缘基板上设置氧化物半导体层，对氧化物半导体层进行热处理工艺，提供对准标记，源电极，漏电极和氧化物半导体图案 在热处理过程之后，在热处理工艺之后提供栅电极，并提供连接到漏电极的像素电极。