公开(公告)号：US08586479B2

公开(公告)日：2013-11-19

申请号：US13356002

申请日：2012-01-23

申请人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

发明人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/02057 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/306 ,  H01L21/76814 ,  H01L21/76826

摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.

摘要翻译： 在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。 在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘 其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

公开(公告)号：US20130189840A1

公开(公告)日：2013-07-25

申请号：US13356002

申请日：2012-01-23

申请人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

发明人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

IPC分类号： H01L21/285

CPC分类号： H01L21/76843 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/02057 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/306 ,  H01L21/76814 ,  H01L21/76826

摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.

摘要翻译： 在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。 在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘 其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

公开(公告)号：US20130008984A1

公开(公告)日：2013-01-10

申请号：US13618741

申请日：2012-09-14

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US08293015B2

公开(公告)日：2012-10-23

申请号：US13232317

申请日：2011-09-14

申请人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

公开(公告)号：US20100102417A1

公开(公告)日：2010-04-29

申请号：US12606444

申请日：2009-10-27

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

IPC分类号： H01L29/00 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/45531 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L27/10873 ,  H01L28/60 ,  H01L29/4966 ,  H01L29/517 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

摘要： Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.

摘要翻译： 实施例提供了在诸如原子层沉积（ALD）或等离子体增强ALD（PE-ALD）的气相沉积过程中沉积或形成氮化铝钛材料的方法。 在一些实施例中，通过将衬底依次暴露于钛前体和氮等离子体以形成氮化钛层，将氮化钛层暴露于等离子体处理工艺，并将氮化钛层暴露于 铝前体，同时在其上沉积铝层。 该过程可以重复多次以沉积多个氮化钛和铝层。 随后，可以将基板退火以从多个层形成氮化铝钛材料。 在其它实施例中，氮化铝钛材料可以通过将衬底依次暴露于氮等离子体和包含钛和铝前体的沉积气体来形成。

公开(公告)号：US20080268636A1

公开(公告)日：2008-10-30

申请号：US12171132

申请日：2008-07-10

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。

公开(公告)号：US07416979B2

公开(公告)日：2008-08-26

申请号：US11456073

申请日：2006-07-06

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/00

CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864

摘要： Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

摘要翻译： 提供了一种在衬底上沉积阻挡层和钨材料的方法的实施例。 在一个实施例中，一种方法提供在衬底上形成阻挡层并将衬底暴露于硅烷气体，以在浸泡过程期间在阻挡层上形成薄的含硅层。 该方法还进一步在原子层沉积工艺期间在阻挡层和薄的含硅层上沉积钨成核层，并在化学气相沉积工艺期间在钨成核层上沉积钨体层。 在一些示例中，阻挡层包含金属钴和钴硅化物，或金属镍和镍硅化物。 在其它实例中，阻挡层包含金属钛和氮化钛，或金属钽和氮化钽。

公开(公告)号：US06740585B2

公开(公告)日：2004-05-25

申请号：US10044412

申请日：2002-01-09

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L2141

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

摘要翻译： 提供了用于形成金属或金属硅化物阻挡层的方法和装置。 一方面，提供了一种处理衬底的方法，包括将其上设置有硅材料的衬底定位在衬底处理系统中，在第一处理室中在衬底表面上沉积第一金属层，通过使 硅材料和第一金属层，并且在第二处理室中在基底上原位沉积第二金属层。 另一方面，该方法在包括负载锁定室的设备中进行，中间衬底传送区域包括第一衬底传送室和第二衬底传送室，耦合到第一衬底传送室的物理气相沉积处理室，以及 耦合到第二衬底传送室的化学气相沉积室。