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公开(公告)号：US11678083B2
公开(公告)日：2023-06-13
申请号：US17551720
申请日：2021-12-15
Inventor： Yoshiaki Satou , Shota Yamada , Masashi Murakami , Yutaka Hirose
CPC classification number: H04N25/63 , H01L27/146 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H04N25/59 , H04N25/62 , H04N25/70 , H04N25/76
Abstract: An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.
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公开(公告)号：US11330205B2
公开(公告)日：2022-05-10
申请号：US17183213
申请日：2021-02-23
Inventor： Akito Inoue , Yutaka Hirose , Seiji Yamahira
IPC: H04N5/355 , H04N5/369 , H04N5/378 , H01L27/146 , H01L31/107
Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.
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公开(公告)号：US11290675B2
公开(公告)日：2022-03-29
申请号：US17274133
申请日：2019-09-05
Inventor： Yutaka Hirose , Akihiro Odagawa , Shinzo Koyama
IPC: H04N5/378 , H04N5/351 , H04N5/374 , H04N5/335 , H04N5/369 , H01L27/146 , G01S17/00 , G01S17/89 , H04N5/3745
Abstract: A solid-state image sensor capable of detecting a photon and having smaller circuit scale is provided. The solid-state image sensor includes a pixel array including a plurality of pixel cells, a pixel driving circuit configured to drive the plurality of pixel cells, a readout circuit, and a plurality of readout wires corresponding to respective columns of the pixel cell. Each of the plurality of pixel cells includes an avalanche photodiode configured to detect a photon by avalanche multiplication occurring when one photon enters, and a transfer transistor configured to transfer a detection result of the photon to the corresponding readout wire. The readout circuit determines whether a photon is detected or not, and outputs a determination result.
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公开(公告)号：US10914629B2
公开(公告)日：2021-02-09
申请号：US16577311
申请日：2019-09-20
Inventor： Toru Okino , Yutaka Hirose , Seiji Yamahira
Abstract: An imaging system includes: an image sensor sensitive to ultraviolet light and visible light; a lens configured to focus light from a subject onto the image sensor; and an image processor configured to process image signals output from the image sensor. The image processor obtains the difference between image signals A1 and A2 output from the image sensor at times t1 and t2, respectively. If the differential signal A3 is greater than or equal to a predetermined value, the image processor determines that light from the subject contains the ultraviolet light, and generates an image signal CI based on the differential signal A3.
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Patent Agency Ranking
公开(公告)号：US10158814B2
公开(公告)日：2018-12-18
申请号：US14714366
申请日：2015-05-18
Inventor： Motonori Ishii , Yoshiyuki Matsunaga , Yutaka Hirose
IPC: H01L27/00 , H04N5/363 , H04N5/3745 , H04N5/374 , H04N5/378
Abstract: A solid-state imaging apparatus has: a signal readout circuit including a charge storage region connected to a photoelectric conversion region, and a reset transistor connected at one of source and drain to the charge storage region; and a negative feedback circuit that feeds back an output of the signal readout circuit in a negative feedback manner to the other of the source and drain of the reset transistor. A reset operation for discharging a charge stored in the charge storage region includes a first period in which the negative feedback circuit is OFF and a second period which occurs after the first period and in which the negative feedback circuit is ON. In the first period, the reset transistor changes from OFF to ON and then to OFF. In the second period, such a reset transistor control voltage is applied that makes the reset transistor to gradually change to ON.
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公开(公告)号：US10084008B2
公开(公告)日：2018-09-25
申请号：US15678790
申请日：2017-08-16
Inventor： Yusuke Sakata , Mitsuyoshi Mori , Yutaka Hirose , Hiroshi Masuda , Hitoshi Kuriyama , Ryohei Miyagawa
IPC: H01L27/148 , H01L27/146 , H01L21/768 , H01L23/485
CPC classification number: H01L27/14806 , H01L21/76886 , H01L23/485 , H01L27/1463 , H01L27/14643 , H01L27/14665 , H01L2924/00 , H01L2924/0002
Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.
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公开(公告)号：US20180191975A1
公开(公告)日：2018-07-05
申请号：US15900037
申请日：2018-02-20
Inventor： Motonori Ishii , Yutaka Hirose , Shota Yamada
IPC: H04N5/365 , H01L27/146 , H04N5/374
CPC classification number: H04N5/365 , H01L27/146 , H01L27/14612 , H01L27/14645 , H04N5/367 , H04N5/374 , H04N5/378
Abstract: An imaging device includes: a solid-state image sensor including: a plurality of pixels that are arranged in a two-dimensional array; and a signal processing device that processes an output signal from the solid-state image sensor. The imaging device generates a corrected image by: generating a correction signal based on a difference between a first temporary correction signal and a second temporary correction signal, the first temporary correction signal being obtained by directly applying a first voltage amplitude to a signal storage provided in each of the plurality of pixels, and the second temporary correction signal being obtained by applying, to the signal storage, a second voltage amplitude that is different from the first voltage amplitude; acquiring an image signal upon a photographing drive operation being performed by the solid-state image sensor; and applying the correction signal to the image signal.
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公开(公告)号：US09871983B2
公开(公告)日：2018-01-16
申请号：US15377613
申请日：2016-12-13
Inventor： Keisuke Yazawa , Motonori Ishii , Yutaka Hirose , Yoshihisa Kato , Yoshiyuki Matsunaga
IPC: H04N5/363 , H04N5/374 , H04N5/3745 , H04N5/378 , H01L27/30
CPC classification number: H04N5/363 , H01L27/307 , H04N5/374 , H04N5/3741 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.
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公开(公告)号：US09743026B2
公开(公告)日：2017-08-22
申请号：US14740113
申请日：2015-06-15
Inventor： Manabu Usuda , Yutaka Hirose , Yoshihisa Kato , Nobukazu Teranishi
IPC: H01L27/146 , H04N5/378 , H04N5/369 , H04N5/3745 , G01J1/44 , H01L31/107 , H04N5/357 , H04N5/361
CPC classification number: H04N5/378 , G01J1/44 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H01L27/14634 , H01L27/14665 , H01L31/107 , H01L2924/381 , H04N5/357 , H04N5/361 , H04N5/369 , H04N5/37455
Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.
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