知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

191 records (took 0.022 seconds)

    RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY
    26.
    发明申请
    RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY 有权
    RGB-IR光电传感器，具有非侵入性的P-PELL薄型深度型材，用于减少交叉点和增强的红外灵敏度

    公开(公告)号：US20160358969A1

    公开(公告)日：2016-12-08

    申请号：US14731707

    申请日：2015-06-05

    Applicant: OmniVision Technologies, Inc.

    Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

    Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

    Abstract translation: 前置互连（FSI）红 - 绿 - 蓝 - 红 - 红（RGB-IR）光电传感器阵列具有在P型阱中具有扩散的N型区域的第一类型的光电传感器，P型阱扩散到 高电阻率半导体层; P型井中具有较深扩散的N型区域的第二类光电传感器，P型井; 以及具有扩散的N型区域的第三类型的光电传感器扩散到所有其它类型的光电传感器的所有高电阻率半导体层。 在实施例中，第四类型的光电传感器在P型阱中具有扩散的N型区域，N型区域比第一和第二类型的光电传感器的N型区域更深。

    Image sensor pixel cell with switched deep trench isolation structure
    27.
    发明授权
    Image sensor pixel cell with switched deep trench isolation structure 有权
    具有开关深沟槽隔离结构的图像传感器像素单元

    公开(公告)号：US09496304B2

    公开(公告)日：2016-11-15

    申请号：US14704493

    申请日：2015-05-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

    IPC: H01L29/66 ,  H01L27/146 ,  H04N5/378

    CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

    Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

    BLUE ENHANCED IMAGE SENSOR
    28.
    发明申请
    BLUE ENHANCED IMAGE SENSOR 有权
    蓝增强图像传感器

    公开(公告)号：US20160211295A1

    公开(公告)日：2016-07-21

    申请号：US14601010

    申请日：2015-01-20

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

    Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

    Image sensor with dielectric charge trapping device
    29.
    发明授权
    Image sensor with dielectric charge trapping device 有权
    具有介电电荷俘获装置的图像传感器

    公开(公告)号：US09312299B2

    公开(公告)日：2016-04-12

    申请号：US14250192

    申请日：2014-04-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H01L31/167

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

    Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

    Circuit structure for providing conversion gain of a pixel array
    30.
    发明授权
    Circuit structure for providing conversion gain of a pixel array 有权
    用于提供像素阵列的转换增益的电路结构

    公开(公告)号：US09083899B2

    公开(公告)日：2015-07-14

    申请号：US13773437

    申请日：2013-02-21

    Applicant: OmniVision Technologies, Inc.

    Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L27/00 ,  H01J40/14 ,  H03G3/20 ,  H04N5/355 ,  H01L27/146 ,  H04N5/52

    CPC classification number: H04N5/3559 ,  H01L27/14601 ,  H04N5/355 ,  H04N5/52

    Abstract: Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—a supply voltage. In another embodiment, the conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—sample and hold circuitry.

    Abstract translation: 像素阵列的技术和机制提供一个转换增益水平。 在一个实施例中，像素阵列包括转换增益控制电路，以在不同的时间针对不同的操作模式进行选择性地配置，每个模式用于实现相应的转换增益。 转换增益控制电路选择性地提供像素单元与像素单元与电源电压的 - 和/或开关去耦合的切换耦合。 在另一个实施例中，转换增益控制电路选择性地提供像素单元与采样和保持电路的 - 和/或开关去耦合的切换耦合。

Patent Agency Ranking