公开(公告)号：US20170213863A1

公开(公告)日：2017-07-27

申请号：US15239537

申请日：2016-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

公开(公告)号：US20170115436A1

公开(公告)日：2017-04-27

申请号：US14920126

申请日：2015-10-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li

IPC: G02B5/20 ,  H04N5/225

CPC classification number: G02B5/208 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14649 ,  H04N5/2254 ,  H04N5/33 ,  H04N5/332 ,  H04N9/045

Abstract: Embodiments are described of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit includes an invisible-wavelength filter layer including a plurality of filters and a visible-wavelength filter layer positioned on the invisible-wavelength filter layer and having a plurality of filters such that each filter from the visible-wavelength layer is optically coupled to a corresponding filter in the invisible-wavelength layer.

公开(公告)号：US09608023B1

公开(公告)日：2017-03-28

申请号：US15144194

申请日：2016-05-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. A light blocking layer is disposed in recessed regions of the transparent shield, and the recessed regions are disposed on an illuminated side of the transparent shield. The light blocking layer is disposed to prevent light from reflecting off edges of the transparent shield into the image sensor.

公开(公告)号：US20160268333A1

公开(公告)日：2016-09-15

申请号：US15166002

申请日：2016-05-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.

Abstract translation: 制造图像系统的方法包括形成包括第一半导体衬底和第一互连层的第一晶片。 像素阵列形成在第一半导体衬底的成像区域中，并且第一绝缘填充沟槽形成在第一半导体衬底的外围电路区域中。 此外，形成包括第二半导体衬底和第二互连层的第二晶片。 在第二半导体衬底中形成第二绝缘填充沟槽，并且将第一晶片接合到第二晶片。 第三晶片的第三互连层被结合到第二晶片。 通过第一和第二互连层并穿过第一和第二绝缘填充沟槽形成至少一个深通孔腔。 至少一个深通孔腔被导电材料填充以形成深通孔。

公开(公告)号：US20160111468A1

公开(公告)日：2016-04-21

申请号：US14515307

申请日：2014-10-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后，在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

公开(公告)号：US20160099266A1

公开(公告)日：2016-04-07

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

公开(公告)号：US20230215887A1

公开(公告)日：2023-07-06

申请号：US18050402

申请日：2022-10-27

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Shao-Fan Kao ,  Tung-Ti Yeh

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate has a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.

公开(公告)号：US20220038664A1

公开(公告)日：2022-02-03

申请号：US16983844

申请日：2020-08-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Eiichi Funatsu ,  Jin Li

IPC: H04N9/04 ,  H04N11/20

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

公开(公告)号：US10475838B2

公开(公告)日：2019-11-12

申请号：US15714502

申请日：2017-09-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Chin Poh Pang ,  Boyang Zhang

IPC: H01L27/146

Abstract: An image sensor includes a multi-pixel detector. The multi-pixel detector includes a first pixel formed in a substrate and having a first photodiode region, a second pixel formed in the substrate adjacent to the first pixel and having a second photodiode region, and a microlens above both the first pixel and the second pixel. The microlens includes (a) in a first cross-sectional plane perpendicular to a top surface of the substrate and including both the first and the second photodiode regions, a first height profile having N1 local maxima, and (b) in a second cross-sectional plane perpendicular to the first cross-sectional plane and the top surface and including only one of the first and the second photodiode regions, a second height profile having N2>N1 local maxima.

公开(公告)号：US10297627B1

公开(公告)日：2019-05-21

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.