公开(公告)号：US20210063432A1

公开(公告)日：2021-03-04

申请号：US16815148

申请日：2020-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira FUJIMOTO ,  Hideyuki TOMIZAWA ,  Akiko YUZAWA ,  Naofumi NAKAMURA

IPC: G01P15/125

Abstract: According to one embodiment, a sensor includes a base body, a first movable structure body, and a first fixed structure body. The first movable structure body includes first movable electrodes. A direction from the base body toward the first movable electrodes is aligned with a first direction. A distance between the base body and the plurality of first movable electrodes is changeable. A direction from one of the first movable electrodes toward an other one of the first movable electrodes is aligned with a second direction crossing the first direction. The first fixed structure body includes first fixed electrodes. One of the first fixed electrodes is between the one of the first movable electrodes and the other one of the first movable electrodes. A first movable electrode length along the first direction is shorter than a first fixed electrode length along the first direction.

公开(公告)号：US20160289060A1

公开(公告)日：2016-10-06

申请号：US15068511

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira FUJIMOTO ,  Naofumi NAKAMURA ,  Tamio IKEHASHI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00365 ,  B81C2201/0167 ,  B81C2201/0169 ,  G01P15/0802 ,  G01P15/125

Abstract: According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.

Abstract translation: 根据一个实施例，提供了一种制造装置的方法。 形成非晶金属层。 在非晶金属层上形成含有金属并具有取向为规定面的晶面的金属层。 包含硅的第一层和包含在金属层中的金属相同的金属形成在金属层上。 将第一层改变为包含半导体和金属的化合物的第二层，该化合物具有定向到预定平面的晶体面。 在第二层上形成含有多晶硅锗并且具有定向到预定平面的晶体面的第三层。

公开(公告)号：US20150311393A1

公开(公告)日：2015-10-29

申请号：US14741789

申请日：2015-06-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Koji ASAKAWA ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

Abstract translation: 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。

公开(公告)号：US20150069013A1

公开(公告)日：2015-03-12

申请号：US14152249

申请日：2014-01-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kaori KIMURA ,  Kazutaka TAKIZAWA ,  Akira FUJIMOTO

IPC: G11B5/84

CPC classification number: G11B5/855

Abstract: According to one embodiment, a magnetic recording layer is coated with a fine particle coating solution containing fine particles coated with a protective layer containing a first additive including a straight-chain structure for increasing wettability to the magnetic recording layer, and a carboxy group or the like, and a second additive including a carboxy group or the like and a polymerizable functional group, each fine particle having, on at least a surface thereof, a material selected from Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Sn, Mo, Ta, W, and oxides thereof, thereby forming a fine particle monolayer, and heat or light energy is applied, thereby curing the protective layer and forming a periodic pattern.

Abstract translation: 根据一个实施例，磁记录层涂覆有包含涂覆有保护层的细颗粒的细颗粒涂布溶液，该保护层含有包含用于提高对磁记录层的润湿性的直链结构的第一添加剂，以及羧基或 以及包含羧基等的第二添加剂和可聚合官能团，每个细颗粒至少在其表面上具有选自Al，Si，Ti，V，Cr，Mn，Fe，Co的材料 ，Ni，Zn，Y，Zr，Sn，Mo，Ta，W及其氧化物，由此形成细颗粒单层，并施加热能或光能，从而固化保护层并形成周期性图案。