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    Contour mode resonators with acoustic reflectors
    22.
    发明授权
    Contour mode resonators with acoustic reflectors 有权
    具有声反射器的轮廓模式谐振器

    公开(公告)号：US07385334B1

    公开(公告)日：2008-06-10

    申请号：US11602011

    申请日：2006-11-20

    Applicant: Roy H. Olsson ,  James G. Fleming ,  Melanie R. Tuck

    Inventor： Roy H. Olsson ,  James G. Fleming ,  Melanie R. Tuck

    IPC: H01L41/08

    CPC classification number: H03H3/0072 ,  H03H9/172 ,  H03H9/175 ,  H03H9/2431 ,  H03H2009/02503 ,  H03H2009/241

    Abstract: A microelectromechanical (MEM) resonator is disclosed which has a linear or ring-shaped acoustic resonator suspended above a substrate by an acoustic reflector. The acoustic resonator can be formed with a piezoelectric material (e.g. aluminum nitride, zinc oxide or PZT), or using an electrostatically-actuated material. The acoustic reflector (also termed an acoustic mirror) uses alternating sections of a relatively low acoustic impedance ZL material and a relatively high acoustic impedance ZH material to isolate the acoustic resonator from the substrate. The MEM resonator, which can be formed on a silicon substrate with conventional CMOS circuitry, has applications for forming oscillators, rf filters, and acoustic sensors.

    Abstract translation: 公开了一种具有通过声反射器悬挂在衬底上的线性或环形声谐振器的微机电（MEM）谐振器。 声谐振器可以由压电材料（例如氮化铝，氧化锌或PZT）形成，或者使用静电致动材料。 声反射器（也称为声反射镜）使用相对较低的声阻抗Z L L材料和相对较高的声阻抗Z H H材料的交替部分来隔离声谐振器 从底物。 可以用常规CMOS电路形成在硅衬底上的MEM谐振器具有用于形成振荡器，射频滤波器和声学传感器的应用。

    Tensile-stressed microelectromechanical apparatus and microelectromechanical relay formed therefrom
    23.
    发明授权
    Tensile-stressed microelectromechanical apparatus and microelectromechanical relay formed therefrom 有权
    拉伸应力微机电装置和由其形成的微机电继电器

    公开(公告)号：US07339454B1

    公开(公告)日：2008-03-04

    申请号：US11103311

    申请日：2005-04-11

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: H01H37/48 ,  H01H37/50

    CPC classification number: H01H61/04 ,  H01H2001/0047 ,  H01H2061/006

    Abstract: A microelectromechanical (MEM) apparatus is disclosed which includes a shuttle suspended above a substrate by two or more sets of tensile-stressed beams which are operatively connected to the shuttle and which can comprise tungsten or a silicon nitride/polysilicon composite structure. Initially, the tensile stress in each set of beams is balanced. However, the tensile stress can be unbalanced by heating one or more of the sets of beams; and this can be used to move the shuttle over a distance of up to several tens of microns. The MEM apparatus can be used to form a MEM relay having relatively high contact and opening forces, and with or without a latching capability.

    Abstract translation: 公开了一种微机电（MEM）装置，其包括通过两个或更多组可拉伸应力梁悬挂在基板上方的梭，其可操作地连接到梭，并且其可以包括钨或氮化硅/多晶硅复合结构。 最初，每组梁的拉伸应力是平衡的。 然而，拉伸应力可以通过加热一组或多束光束而不平衡; 并且这可以用于将梭子移动高达几十微米的距离。 可以使用MEM装置来形成具有相对高的接触和打开力并具有或不具有锁定能力的MEM继电器。

    Use of a photonic crystal for optical amplifier gain control
    24.
    发明授权
    Use of a photonic crystal for optical amplifier gain control 有权
    使用光子晶体进行光放大器增益控制

    公开(公告)号：US07079309B1

    公开(公告)日：2006-07-18

    申请号：US10607065

    申请日：2003-06-25

    Applicant: Shawn-Yu Lin ,  James G. Fleming ,  Ihab El-Kady

    Inventor： Shawn-Yu Lin ,  James G. Fleming ,  Ihab El-Kady

    IPC: H01S4/00 ,  F21V9/00 ,  G02F1/00

    CPC classification number: H01S3/063 ,  H01S3/1608 ,  H01S3/1628 ,  H01S5/105 ,  H01S5/3031 ,  H01S5/50 ,  H01S2301/04

    Abstract: An optical amplifier having a uniform gain profile uses a photonic crystal to tune the density-of-states of a gain medium so as to modify the light emission rate between atomic states. The density-of-states of the gain medium is tuned by selecting the size, shape, dielectric constant, and spacing of a plurality of microcavity defects in the photonic crystal. The optical amplifier is particularly useful for the regeneration of DWDM signals in long optical fibers.

    Abstract translation: 具有均匀增益分布的光放大器使用光子晶体来调节增益介质的状态密度，以便改变原子状态之间的发光速率。 通过选择光子晶体中的多个微腔缺陷的尺寸，形状，介电常数和间距来调节增益介质的状态密度。 光放大器特别适用于长光纤中DWDM信号的再生。

    Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom
    25.
    发明授权
    Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom 有权
    拉伸应力微机电装置和由其形成的微型反射镜

    公开(公告)号：US07046411B1

    公开(公告)日：2006-05-16

    申请号：US11118573

    申请日：2005-04-29

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: H01H51/22 ,  G02B26/08

    CPC classification number: B81B3/0032 ,  B81B2201/045 ,  B81B2203/053 ,  B81C2201/0164 ,  B81C2201/0167 ,  G02B26/0841 ,  Y10S359/904

    Abstract: A microelectromechanical (MEM) apparatus is disclosed which includes one or more tensile-stressed actuators that are coupled through flexures to a stage on a substrate. The tensile-stressed actuators, which can be formed from tensile-stressed tungsten or silicon nitride, initially raise the stage above the substrate without any applied electrical voltage, and can then be used to control the height or tilt angle of the stage. An electrostatic actuator can also be used in combination with each tensile-stressed actuator. The MEM apparatus has applications for forming piston micromirrors or tiltable micromirrors and independently addressable arrays of such devices.

    Abstract translation: 公开了一种微机电（MEM）装置，其包括一个或多个拉伸应力致动器，其通过挠曲件耦合到基板上的台。 可以由拉应力钨或氮化硅形成的拉伸应力致动器最初将基底升高到基板上方，而没有任何施加的电压，然后可用于控制载物台的高度或倾斜角度。 静电致动器也可以与每个拉伸应力致动器组合使用。 MEM装置具有用于形成活塞微镜或可倾斜的微反射镜以及这种装置的独立可寻址阵列的应用。

    Thermophotovoltaic energy conversion using photonic bandgap selective emitters
    26.
    发明授权
    Thermophotovoltaic energy conversion using photonic bandgap selective emitters 有权
    使用光子带隙选择性发射器的光伏能量转换

    公开(公告)号：US06583350B1

    公开(公告)日：2003-06-24

    申请号：US10114820

    申请日：2002-04-03

    Applicant: James M. Gee ,  Shawn-Yu Lin ,  James G. Fleming ,  James B. Moreno

    Inventor： James M. Gee ,  Shawn-Yu Lin ,  James G. Fleming ,  James B. Moreno

    IPC: H01L31058

    CPC classification number: H01K1/50 ,  H01K1/04 ,  H01K3/02 ,  H01L33/02

    Abstract: A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.

    Abstract translation: 一种用于电光发电的方法包括加热金属光子晶体以提供与将辐射转换成电的光伏电池的峰值光谱响应匹配的辐射的选择性发射。 对于光子晶体，使用难熔金属（例如钨）可以实现高辐射通量的高温操作和用于全3D光子带隙的高介电对比度，对于有效的热光能转换而言是优选的。

    Method for forming suspended micromechanical structures
    28.
    发明授权
    Method for forming suspended micromechanical structures 有权
    形成悬浮微机械结构的方法

    公开(公告)号：US6020272A

    公开(公告)日：2000-02-01

    申请号：US169307

    申请日：1998-10-08

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L21/00

    CPC classification number: B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/053

    Abstract: A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.

    Abstract translation: 公开了一种从{111}结晶硅形成悬浮微机械结构的微加工方法。 微加工方法基于使用各向异性干蚀刻来限定结构的侧向特征，其被蚀刻成{111} - 硅基底到第一蚀刻深度，从而形成该结构的侧壁。 然后用保护层涂覆侧壁，并且将基底干蚀刻至第二蚀刻深度以限定结构与基底的间隔。 使用选择性各向异性湿蚀刻剂（例如KOH，EDP，TMAH，NaOH或CsOH）横向地削去第一和第二蚀刻深度之间的结构，由此沿{111}晶面形成基本上平面的该结构的下表面， 平行于结构的上表面。 通过湿蚀刻剂的底切的横向范围通过定时蚀刻，倾斜的{111} - 硅面的位置或预先形成的蚀刻停止点的位置来控制和有效地终止。 该本方法允许形成具有大垂直尺寸和大质量的悬浮微机械结构，同时允许可通过干蚀刻定义提供的详细横向特征。 另外，本发明的方法与基板上的电子电路的形成兼容。

    Method for integrating microelectromechanical devices with electronic circuitry
    29.
    发明授权
    Method for integrating microelectromechanical devices with electronic circuitry 失效
    将微机电装置与电子电路集成的方法

    公开(公告)号：US5963788A

    公开(公告)日：1999-10-05

    申请号：US974586

    申请日：1997-11-19

    Applicant: Carole C. Barron ,  James G. Fleming ,  Stephen Montague

    Inventor： Carole C. Barron ,  James G. Fleming ,  Stephen Montague

    IPC: B81B3/00 ,  B81B7/00 ,  B81B7/02 ,  G03F7/09 ,  G03F7/207 ,  G03F9/00 ,  H01L21/00

    CPC classification number: G03F7/094 ,  B81C1/00246 ,  G03F9/70 ,  H01L24/24 ,  B81C2203/0728 ,  G01P2015/0828 ,  H01L2924/1305 ,  H01L2924/14 ,  Y10S148/105

    Abstract: A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

    Abstract translation: 公开了用于将一个或多个微机电（MEM）装置与公共基板上的电子电路集成的方法。 MEM器件可以在衬底腔内制造并用牺牲材料封装。 这允许MEM器件被退火，并且在使用一系列标准处理步骤在衬底上形成电子电路之前将衬底平坦化。 在电子电路制造之后，在蚀刻释放过程期间，电子电路可以被氮化钛（TiN）和钨（W）的双层保护层保护，由此MEM器件通过蚀刻去除部分 封装MEM器件的牺牲材料（例如二氧化硅或硅酸盐玻璃）。 蚀刻释放方法优选使用氢氟酸（HF）和盐酸（HCl）的混合物进行，与使用缓冲的氧化物蚀刻剂相比，其减少了释放MEM装置的时间。 在释放MEM器件之后，可以用基于过氧化物的蚀刻剂去除TiN：W保护层，而不损坏电子电路。

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