公开(公告)号：US20130221323A1

公开(公告)日：2013-08-29

申请号：US13816628

申请日：2011-08-16

Applicant: Mei-Ling Kuo ,  Shawn-Yu Lin ,  Yong-Sung Kim ,  Mei-Li Hsieh

Inventor： Mei-Ling Kuo ,  Shawn-Yu Lin ,  Yong-Sung Kim ,  Mei-Li Hsieh

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y40/00 ,  H01L33/005 ,  H01L33/007 ,  H01L33/18 ,  H01L33/20 ,  Y10S977/755 ,  Y10S977/89 ,  Y10S977/95

Abstract: The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.

Abstract translation: 本发明涉及发光器件及相关部件，系统和方法。 一方面，本发明涉及发光二极管（LED）光提取效率。 非限制性示例，该应用教导了通过提供纳米棒发光二极管来提高发光二极管（LED）提取效率的方法; 提供量子阱; 并且在量子阱平面（x和y）中横向减小所述纳米棒LED的尺寸，从而提高LED提取效率。

公开(公告)号：US06674778B1

公开(公告)日：2004-01-06

申请号：US10044488

申请日：2002-01-09

Applicant: Shawn-Yu Lin ,  Walter J. Zubrzycki

Inventor： Shawn-Yu Lin ,  Walter J. Zubrzycki

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/10 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/3415

Abstract: A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Abstract translation: 描述了基于一维或二维光子带隙（PBG）结构的高效电泵浦边缘发射半导体激光器。 使用在光子带隙状态下操作的一对PBG镜来形成激光光腔。 通过围绕具有较低折射率覆层的高折射率的有源半导体层来实现横向约束。 包层可以在具有小导电孔的无源PBG反射镜和波导区域中电绝缘，用于将注入泵电流有效地引导到有源区域中。 有源层可以包括量子阱结构。 可以在无源区域中放宽量子阱结构，以提供从有源区域提供有效的激光。

公开(公告)号：US06297496B1

公开(公告)日：2001-10-02

申请号：US09447535

申请日：1999-11-23

Applicant: Shawn-Yu Lin ,  James G. Fleming ,  Brian W. Dodson

Inventor： Shawn-Yu Lin ,  James G. Fleming ,  Brian W. Dodson

IPC: H01L3100

CPC classification number: H01L31/09 ,  C09D5/32 ,  H01L31/02164

Abstract: A new class of photodetectors which include means for passive shielding against undesired thermal radiation is disclosed. Such devices can substitute in applications currently requiring cooled optical sensors, such as IR detection and imaging. This description is included for purposes of searching, and is not intended to limit or otherwise influence the interpretation of the present invention.

Abstract translation: 公开了一类新的光电探测器，其包括用于被动屏蔽以防止不期望的热辐射的装置。 这样的设备可以替代目前需要冷却的光学传感器的应用，例如IR检测和成像。 为了搜索而包含该描述，并不意图限制或以其它方式影响本发明的解释。

公开(公告)号：US20130161677A1

公开(公告)日：2013-06-27

申请号：US13810380

申请日：2011-07-19

Applicant: Shawn-Yu Lin ,  Yong Sung Kim ,  Mei-Li Hsieh

Inventor： Shawn-Yu Lin ,  Yong Sung Kim ,  Mei-Li Hsieh

IPC: H01L33/58

CPC classification number: H01L33/46 ,  G02B5/18 ,  G02B5/30 ,  G02B5/3008 ,  G02B5/3058 ,  G02B5/3083 ,  G02B5/32 ,  H01L33/58 ,  H01L2933/0083

Abstract: The invention is directed to an integrated polarized light emitting diode device that has a light emitting diode, a metal grating, an oxide layer, and a built-in photonic crystal rotator. Additional teachings include a method for making the integrated polarized light emitting diode, a method for improving the polarization selectivity and energy efficiency of a light emitting diode, and a method for rotating polarization of a light emitting diode.

Abstract translation: 本发明涉及一种具有发光二极管，金属光栅，氧化物层和内置光子晶体旋转器的集成偏振发光二极管器件。 附加的教导包括制造集成偏振发光二极管的方法，改善发光二极管的极化选择性和能量效率的方法，以及用于旋转发光二极管的偏振的方法。

公开(公告)号：US20110120554A1

公开(公告)日：2011-05-26

申请号：US12736278

申请日：2009-03-27

Applicant: Sameer Chhajed ,  Jong Kyu Kim ,  Shawn-Yu Lin ,  Mei-Ling Kuo ,  Frank W. Mont ,  David J. Poxson ,  E. Fred Schubert ,  Martin F. Schubert

Inventor： Sameer Chhajed ,  Jong Kyu Kim ,  Shawn-Yu Lin ,  Mei-Ling Kuo ,  Frank W. Mont ,  David J. Poxson ,  E. Fred Schubert ,  Martin F. Schubert

IPC: H01L31/0232 ,  B32B7/02 ,  B32B18/00 ,  G02B1/11 ,  H01L31/18 ,  B82Y30/00

CPC classification number: H01L31/02168 ,  C09D1/00 ,  C09D5/006 ,  G02B1/115 ,  H01L31/0203 ,  Y02E10/50 ,  Y10T428/24124 ,  Y10T428/24975 ,  Y10T428/249924 ,  Y10T428/249962

Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.

Abstract translation: 抗反射涂层的平均总反射率在400-1100nm波长范围内，平均全反射率小于10％，例如小于5.9％，例如4.9至5.9％，入射角范围为0 相对于防反射涂层的表面法线为-90度。 抗反射涂层在400-1600nm的整个波长范围内具有小于10％的总反射率，例如小于6％，例如小于4％，并且0- 相对于防反射涂层的表面法线为70度。

公开(公告)号：US06812482B2

公开(公告)日：2004-11-02

申请号：US09941820

申请日：2001-08-28

Applicant: James G. Fleming ,  Shawn-Yu Lin

Inventor： James G. Fleming ,  Shawn-Yu Lin

IPC: H01I3300

CPC classification number: G02B6/1225 ,  B82Y20/00

Abstract: A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20&mgr; spectral range.

Abstract translation: 公开了一类适用于分层材料组合物制造的工艺。 分层材料组合物通常是三维结构，其可以分解成一堆结构化层。 最着名的例子是光子晶格。 本发明组合了光刻和化学 - 机械抛光的特征，以允许直接和容易地制造例如在0.1-20mu光谱范围内具有光子带隙的光子晶格。

公开(公告)号：US5998298A

公开(公告)日：1999-12-07

申请号：US67614

申请日：1998-04-28

Applicant: James G. Fleming ,  Shawn-Yu Lin ,  Dale L. Hetherington ,  Bradley K. Smith

Inventor： James G. Fleming ,  Shawn-Yu Lin ,  Dale L. Hetherington ,  Bradley K. Smith

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  H01L33/00

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B6/132 ,  G02B2006/12176

Abstract: A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

Abstract translation: 公开了一种用于制造二维或三维光子带隙结构（也称为光子晶体，光子晶格或光子介质结构）的方法。 该方法使用微电子集成电路（IC）工艺在硅衬底上直接制造光子带隙结构。 用于形成结构的一层或多层阵列元件被沉积和图案化，其中使用化学机械抛光来平整每层以获得均匀性和层的精确垂直公差。 使用化学机械平面化可以使光子带隙结构形成在大面积上，层间均匀度约为2％。 气隙光子带隙结构也可以通过去除通过选择性蚀刻分离排列元件的间隔物材料来形成。 该方法可用于制造光子带隙结构，包括法布里 - 珀罗谐振器和用于波长在0.2-20μm范围内的滤光器。

公开(公告)号：US20090126783A1

公开(公告)日：2009-05-21

申请号：US12269398

申请日：2008-11-12

Applicant: Shawn-Yu Lin ,  James A. Bur ,  Zu-Po Yang ,  Lijie Ci ,  Pulickel M. Ajayan

Inventor： Shawn-Yu Lin ,  James A. Bur ,  Zu-Po Yang ,  Lijie Ci ,  Pulickel M. Ajayan

IPC: G02B5/22 ,  H01L31/00 ,  B05D5/06

CPC classification number: G02B5/003 ,  B82Y20/00 ,  G02B1/007 ,  H01L31/0543 ,  H02S10/30 ,  Y02E10/52

Abstract: An optical absorber includes vertically aligned carbon nanotubes with an ultra-low reflectance less than 0.16% and an absorption efficiency greater than 99.84%. The index of refraction and the absorption constant are controlled by independently varying the nanotube diameter and nanotube spacing. The nanotubes are mostly double-walled. The density of the nanotube arrays is very low, around 0.015 g/cm3.

Abstract translation: 光吸收器包括垂直排列的碳纳米管，超低反射率小于0.16％，吸收效率大于99.84％。 通过独立地改变纳米管直径和纳米管间距来控制折射率和吸收常数。 纳米管主要是双壁的。 纳米管阵列的密度非常低，约为0.015g / cm 3。

公开(公告)号：US06611085B1

公开(公告)日：2003-08-26

申请号：US09940962

申请日：2001-08-27

Applicant: James M. Gee ,  Shawn-Yu Lin ,  James G. Fleming ,  James B. Moreno

Inventor： James M. Gee ,  Shawn-Yu Lin ,  James G. Fleming ,  James B. Moreno

IPC: H01K102

CPC classification number: H01K1/50 ,  H01K1/04 ,  H01K3/02 ,  H01L33/02

Abstract: A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

公开(公告)号：US06358854B1

公开(公告)日：2002-03-19

申请号：US09296702

申请日：1999-04-21

Applicant: James G. Fleming ,  Shawn-Yu Lin

Inventor： James G. Fleming ,  Shawn-Yu Lin

IPC: H01L3300

CPC classification number: G02B6/1225 ,  B82Y20/00

Abstract: A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20&mgr; spectral range.

Abstract translation: 公开了一类适用于分层材料组合物制造的工艺。 分层材料组合物通常是三维结构，其可以分解成一堆结构化层。 最着名的例子是光子晶格。 本发明组合了光刻和化学 - 机械抛光的特征，以允许直接和容易地制造例如在0.1-20mu光谱范围内具有光子带隙的光子晶格。