公开(公告)号：US4957880A

公开(公告)日：1990-09-18

申请号：US346359

申请日：1989-04-28

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/268 ,  H01L21/32051 ,  H01L21/76879 ,  Y10S148/071 ,  Y10S148/09

摘要： In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

摘要翻译： 在半导体器件的制造方法中，在绝缘层上形成有连接层，在反应气体的气氛中，通过在具有波长的光中选择性地形成连接层的区域， 在200〜1000nm的范围内，并且在光照射区域中通过CVD法选择性地沉积连接层形成衬底，直到获得所需物质厚度。

公开(公告)号：US4817558A

公开(公告)日：1989-04-04

申请号：US72143

申请日：1987-07-10

申请人： Hitoshi Itoh

发明人： Hitoshi Itoh

IPC分类号： H01L21/205 ,  C23C16/14 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46 ,  C23C16/54 ,  H01L21/285 ,  H01L21/30 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/46

摘要： A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited, heating mechanism for heating the substrate supporting member to deposit the thin film, while heating the substrate, and a cover member covering, in a contacting or noncontacting manner, the whole surface of the substrate supporting member except a substrate bearing surface on which the substrate is to be set. The surface temperature of the cover member is kept lower than that of the substrate, so that an undesired film is restrained from being deposited on the surface of the cover member. Thus, a thin film of good quality can be deposited on the substrate surface with high efficiency.

摘要翻译： 一种薄膜沉积装置，其包括适于在其中容纳材料气体的反应容器用于薄膜沉积反应，位于反应容器中的预定位置的基板支撑构件，以便将基板设置在薄板上 要沉积薄膜，加热基板支撑构件以沉积薄膜同时加热基板的加热机构，以及以接触或非接触方式覆盖基板支撑构件的除基板轴承外的整个表面的盖构件 要在其上设置衬底的表面。 盖构件的表面温度保持低于衬底的表面温度，从而抑制不期望的膜沉积在覆盖构件的表面上。 因此，可以高效率地在基板表面上沉积质量好的薄膜。

公开(公告)号：US08562751B2

公开(公告)日：2013-10-22

申请号：US13351641

申请日：2012-01-17

申请人： Isao Gunji ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

发明人： Isao Gunji ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

IPC分类号： C23G1/00

CPC分类号： C23C16/4405

摘要： A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

摘要翻译： 基板处理装置的干洗方法包括通过氧化附着在基板处理装置的处理室内部的金属膜来形成金属氧化物; 通过使金属氧化物与β-二酮反应形成络合物; 并升华待除去的复合物。 含有氧和β-二酮的清洁气体在加热处理室内部的同时被供给到处理室中。 清洗气体中氧与β-二酮的流量比设定为使得金属氧化物的生成速度低于配合物的形成速度。

公开(公告)号：US20130136859A1

公开(公告)日：2013-05-30

申请号：US13807079

申请日：2011-06-24

申请人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Hitoshi Itoh

发明人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Hitoshi Itoh

IPC分类号： B05D5/12

CPC分类号： B05D5/12 ,  C23C16/40 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.

摘要翻译： 成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。 该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤 在氧化膜上含有第二金属。

公开(公告)号：US20130017328A1

公开(公告)日：2013-01-17

申请号：US13616308

申请日：2012-09-14

申请人： Hidenori MIYOSHI ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Hidenori MIYOSHI ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： C23C16/06

CPC分类号： H01L21/76814 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.

摘要翻译： 成膜方法包括在成膜装置的处理室内配置有形成有绝缘膜的晶片的步骤，以及将含有硅原子的复合气体和供给OH基团的气体供给到表面改性工序 处理室，使得Si-OH基形成在绝缘膜的表面上。 成膜方法还包括将含有含锰材料的成膜气体供给到处理室中的成膜步骤，使得在Si-OH基团上具有的绝缘膜的表面上形成含锰膜 通过CVD法形成。

公开(公告)号：US08349725B2

公开(公告)日：2013-01-08

申请号：US12920701

申请日：2009-02-20

申请人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

发明人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

IPC分类号： H01L21/4763

CPC分类号： H01L21/67207 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67253 ,  H01L21/67742 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.

摘要翻译： 本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接 导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。

公开(公告)号：US20120135612A1

公开(公告)日：2012-05-31

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08124492B2

公开(公告)日：2012-02-28

申请号：US12720831

申请日：2010-03-10

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/20

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US07809199B2

公开(公告)日：2010-10-05

申请号：US11565972

申请日：2006-12-01

申请人： Shinji Aoki ,  Hitoshi Itoh

发明人： Shinji Aoki ,  Hitoshi Itoh

IPC分类号： G06K9/34 ,  G06K9/36 ,  G06K9/46 ,  G06K9/20 ,  G06K9/32 ,  G06K15/02 ,  H04N1/393 ,  H04N1/36

CPC分类号： H04N1/3871 ,  H04N1/40068

摘要： Image forming apparatus, which prevents the occurrence of displacement of the positions of pixels between image data items forming a synthetic image, and eliminates distortion of a character and color shift in character regions and non-character regions. An image size adjustment section obtains, when synthesizing a plurality of image data items to create one image, a remainder by dividing the number of vertical and horizontal pixels of input image data by a least common multiple of the ratio of resolutions of a plurality of image data items, for vertical and horizontal directions of the image. The input image data is processed by means of the result of computing the remainder, so that the remainder becomes 0 when obtaining the remainder by dividing the number of vertical and horizontal pixels of the input image data by the least common multiple of the ratio of the resolutions of the image data items.

摘要翻译： 图像形成装置防止形成合成图像的图像数据项之间的像素位置的发生，并消除字符区域和非字符区域中的字符变形和颜色偏移。 当合成多个图像数据以产生一个图像时，图像尺寸调整部分获得通过将输入图像数据的垂直和水平像素的数目除以多个图像的分辨率的最小公倍数的余数 数据项，用于图像的垂直和水平方向。 通过计算剩余部分的结果来处理输入图像数据，使得当通过将输入图像数据的垂直和水平像素的数量除以该比例的最小公倍数来获得余数时，余数变为0 图像数据项的分辨率。

公开(公告)号：US07278595B2

公开(公告)日：2007-10-09

申请号：US10478605

申请日：2002-08-20

申请人： Hitoshi Itoh ,  Hiroki Tanaka

发明人： Hitoshi Itoh ,  Hiroki Tanaka

IPC分类号： B02C19/06

CPC分类号： B02C23/02 ,  B02C19/06

摘要： A particle feed apparatus is combined with a jet mill and has a particle feeder for feeding particles to an air injector that injects particles together with particle carrying air into the jet mill. The particle feed apparatus is a closed structure isolated from the environment. The use of the closed particle feed apparatus prevents the backflow of dust-loaded air that occurs in a milling system formed by combining a jet mill and an open particle feed apparatus. The use of the closed particle feed apparatus improves the working environment, enhances the milling ability of the jet mill and facilitates operations.

摘要翻译： 颗粒进料装置与喷射磨机组合，并具有用于将颗粒供给到空气喷射器的颗粒进料器，该喷射器将颗粒与颗粒携带空气一起注入喷射式粉碎机。 颗粒进料装置是与环境隔离的封闭结构。 使用封闭的颗粒进料装置防止在通过组合喷射式粉碎机和开放式颗粒进料装置形成的铣削系统中发生的灰尘负载空气的回流。 使用封闭的颗粒进料装置改善了工作环境，提高了喷射磨机的研磨能力，并且便于操作。