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62 条记录 (耗时 0.035 秒)

    Device for preventing mixing of extrinsic noise and protector
    21.
    发明授权
    Device for preventing mixing of extrinsic noise and protector 失效
    用于防止外来噪声和保护器混合的装置

    公开(公告)号：US06809609B1

    公开(公告)日：2004-10-26

    申请号：US09621641

    申请日：2000-07-21

    申请人： Junichi Shibata ,  Akira Hayakawa ,  Masatoshi Sugita

    发明人： Junichi Shibata ,  Akira Hayakawa ,  Masatoshi Sugita

    IPC分类号： H04B328

    CPC分类号： H03H7/09 ,  H03H7/1708 ,  H03H7/1775 ,  H03H7/38

    摘要： A two-staged coupling transformer comprised of an up-stream coupling transformer and a down-stream coupling transformer are successively provided between an input terminal and an output terminal, wherein respective primary windings are connected to the input side while secondary windings are connected to the output side. The up-stream coupling transformer and the down-stream coupling transformer are set to be of identical turns ratios and are connected by respectively converting each other.

    摘要翻译： 由上游耦合变压器和下游耦合变压器组成的两级耦合变压器连续地设置在输入端子和输出端子之间，其中相应的初级绕组连接到输入侧，而次级绕组连接到 输出端。 上游耦合变压器和下游耦合变压器设置为相同的匝数比，并通过分别互相连接。

    Method of supporting and driving cylindrical electro-photographic photoreceptor and imaging apparatus thereof
    23.
    发明授权
    Method of supporting and driving cylindrical electro-photographic photoreceptor and imaging apparatus thereof 失效
    支撑和驱动圆柱形电照相感光体及其成像装置的方法

    公开(公告)号：US5774767A

    公开(公告)日：1998-06-30

    申请号：US773419

    申请日：1996-12-27

    申请人： Junichi Shibata ,  Susumu Honma

    发明人： Junichi Shibata ,  Susumu Honma

    IPC分类号： G03G21/00 ,  F16C13/02 ,  G03G5/10 ,  G03G15/00 ,  G03G21/16

    CPC分类号： G03G15/751

    摘要： The present invention provides a method of supporting and driving an electro-photographic photoreceptor in which total deflection can be improved and vibration sound due to the total deflection can be prevented, and an imaging apparatus realizing the method. A sliding bearing 3 fixed to a supporting member 2 consisting of a box member is fitted into an inner circumferential surface of an end portion of a cylindrical substrate 1 in the axial direction thereof. An annular driving member 4 is fitted into the other end portion of the cylindrical substrate 1 in the axial direction thereof. A threaded hole is provided at the central portion of the driving member 4. When a screw 5 is inserted into the threaded hole, the driving member 4 is deformed in an outer diametrical direction thereof and fixed to the inner circumferential surface of the cylindrical substrate 1. The driving member 4 is caused to be rotated by a driving source (not shown) which is connected to the driving member 4 via a gear 8. The cylindrical substrate 1 is interlocked with the rotation of the driving member 4 and is thereby rotated. Since the cylindrical substrate 1 is directly supported by the sliding bearing 3 and the driving member 4, very little deflection is caused to the substrate 1 so that the generation of vibration sound due to the deflection can be prevented.

    摘要翻译： 本发明提供了一种支持和驱动可以改善总偏转并且可以防止由于总偏转引起的振动声音的电照相感光体的方法，以及实现该方法的成像装置。 固定在由箱体构成的支撑部件2上的滑动轴承3嵌合在筒状基板1的轴向的端部的内周面上。 圆筒状基板1的另一端部的轴向安装环状驱动部件4。 在驱动部件4的中央部设有螺纹孔。当将螺钉5插入到螺纹孔中时，驱动部件4沿其外径方向变形并固定在圆筒形基板1的内周面上 驱动部件4被驱动源（未图示）转动，驱动源通过齿轮8与驱动部件4连接。筒状基板1与驱动部件4的转动互锁，由此旋转。 由于圆柱形基板1由滑动轴承3和驱动构件4直接支撑，所以基板1的偏转非常小，从而可以防止由偏转引起的振动声的产生。

    Microwave filter
    24.
    发明授权
    Microwave filter 失效
    微波滤波器

    公开(公告)号：US4641116A

    公开(公告)日：1987-02-03

    申请号：US801995

    申请日：1985-11-25

    申请人： Junichi Shibata ,  Hiroshi Kojima

    发明人： Junichi Shibata ,  Hiroshi Kojima

    IPC分类号： H01P3/08 ,  H01P1/203 ,  H01P7/08

    CPC分类号： H01P1/20381

    摘要： A microwave bandpass filter having a wide bandwidth, low loss, and yet which requires only a relatively small circuit area. A generally annularly shaped unit-wavelength resonator is formed on a dielectric substrate, disposed between input and output matching circuits. The unit-wavelength resonator is formed by a pair of semi-annular strips disposed opposite one another and having opposing stubs defining therebetween a gap of predetermined width.

    摘要翻译： 一种具有宽带宽，低损耗但仍需要较小电路面积的微波带通滤波器。 在介质基片上形成一个大致圆环形的单位波长谐振器，设置在输入和输出匹配电路之间。 单位波长谐振器由一对彼此相对布置的半环形条形成，并且具有在其间限定预定宽度的间隙的相对短截线。

    Input device using detection of both capacitance and pressure, and capacitance-system hybrid touch panel equipped with pressure-sensitive function
    25.
    发明授权
    Input device using detection of both capacitance and pressure, and capacitance-system hybrid touch panel equipped with pressure-sensitive function 有权
    输入装置采用电容和压力检测，电容式混合触摸屏配有压敏功能

    公开(公告)号：US09542031B2

    公开(公告)日：2017-01-10

    申请号：US14128819

    申请日：2012-06-19

    申请人： Junichi Shibata ,  Ryomei Omote ,  Yoshihiro Kai ,  Yuko Endo

    发明人： Junichi Shibata ,  Ryomei Omote ,  Yoshihiro Kai ,  Yuko Endo

    IPC分类号： G09G5/00 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045

    CPC分类号： G06F3/0416 ,  G06F3/0414 ,  G06F3/044 ,  G06F3/045

    摘要： An input device of the present invention is configured in the following manner: an input part includes electrode parts, which are contactable arranged with facing each other and one of which is to be an operation object, and a pressure-sensitive layer disposed between the electrode parts facing each other; a charge/discharge waveform forming part includes a charge/discharge circuit having a constant current source, a switching element, a capacitor and a resistor, and forms a charge/discharge waveform with a capacitance detection part and a resistance detection part connected; a charge/discharge waveform calculating part detects the change of a capacitance and of a pressure in the input part based on the charge/discharge waveform formed by the charge/discharge waveform forming part, and calculates an operation state, an operation position and an operation pressure.

    摘要翻译： 本发明的输入装置以如下方式构成：输入部包括可彼此面对地布置并且其中一个作为操作对象的电极部分和设置在电极之间的压敏层 零件面对面; 充电/放电波形形成部分包括具有恒流源，开关元件，电容器和电阻器的充电/放电电路，并且与电容检测部分和电阻检测部分连接形成充电/放电波形; 充放电波形计算部根据由充放电波形形成部形成的充放电波形来检测输入部的电容和压力的变化，并计算运转状态，运转位置和运转 压力。

    Semiconductor device and method of manufacturing the same
    26.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08927416B2

    公开(公告)日：2015-01-06

    申请号：US13274039

    申请日：2011-10-14

    申请人： Takeshi Harada ,  Junichi Shibata ,  Akira Ueki

    发明人： Takeshi Harada ,  Junichi Shibata ,  Akira Ueki

    IPC分类号： H01L21/768 ,  H01L23/22 ,  H01L23/532

    CPC分类号： H01L23/53238 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film.

    摘要翻译： 第一绝缘膜形成在半导体衬底上，在第一绝缘膜中形成互连槽，互连槽的内部填充有金属膜，从而形成第一互连。 然后，在第一绝缘膜和第一布线上形成保护膜，并且将保护膜的表面暴露于反应性气体，从而在第一互连和保护膜之间的界面上形成反应层。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    29.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120032333A1

    公开(公告)日：2012-02-09

    申请号：US13274039

    申请日：2011-10-14

    申请人： Takeshi Harada ,  Junichi Shibata ,  Akira Ueki

    发明人： Takeshi Harada ,  Junichi Shibata ,  Akira Ueki

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film.

    摘要翻译： 第一绝缘膜形成在半导体衬底上，在第一绝缘膜中形成互连槽，互连槽的内部填充有金属膜，从而形成第一互连。 然后，在第一绝缘膜和第一布线上形成保护膜，并且将保护膜的表面暴露于反应性气体，从而在第一互连和保护膜之间的界面上形成反应层。