公开(公告)号：US09047893B1

公开(公告)日：2015-06-02

申请号：US14170487

申请日：2014-01-31

Applicant: HGST Netherlands B.V.

Inventor： Zheng Gao ,  Hardayal S. Gill ,  Ying Hong ,  Quang Le

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G11B5/3163 ,  G11B5/39 ,  G11B5/3912 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic sensor having a first sensor stack portion that includes a free layer, non-magnetic spacer or barrier layer and a portion of a pinned layer structure. The sensor has second sensor stack portion formed over the first sensor stack portion. The second sensor stack portion include includes a second portion of the pinned layer structure and a layer of antiferromagnetic material formed over the. The first sensor stack portion is configured with a width and stripe height that define the functional width and strip height of the sensor, whereas the upper portion can be made wider and deeper without affecting sensor performance. Because the patterning of the first sensor stack portion is performed on a thinner structure than would be necessary to pattern the entire sensor stack, the patterning can be performed with smaller dimensions and increased resolution.

Abstract translation: 一种磁传感器，其具有包括自由层，非磁性间隔物或阻挡层以及被钉扎层结构的一部分的第一传感器堆叠部分。 传感器具有形成在第一传感器堆叠部分上的第二传感器堆叠部分。 第二传感器堆叠部分包括被钉扎层结构的第二部分和形成在其上的反铁磁材料层。 第一传感器堆叠部分被配置为具有限定传感器的功能宽度和条带高度的宽度和条纹高度，而上部可以变得更宽和更深，而不影响传感器性能。 由于第一传感器堆叠部分的图案化是在比整个传感器堆叠图案所需的更薄的结构上执行的，所以可以以更小的尺寸和更高的分辨率执行图案化。

公开(公告)号：US08958180B1

公开(公告)日：2015-02-17

申请号：US14012595

申请日：2013-08-28

Applicant: HGST Netherlands B.V.

Inventor： Chando Park ,  Zheng Gao ,  Sangmun Oh ,  Susumu Okamura ,  James Mac Freitag

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B5/3909 ,  G11B5/3912

Abstract: Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.

Abstract translation: 本发明的实施例一般涉及具有包括钉扎层，间隔层，自由层和封盖结构的传感器结构的磁头。 自由层具有包含CoB的最上层，并且封盖结构包括X层，其中X是诸如Hf，Zr，Ti，V，Nb或Ta的元素。

公开(公告)号：US08619394B1

公开(公告)日：2013-12-31

申请号：US13689573

申请日：2012-11-29

Applicant: HGST Netherlands B.V.

Inventor： Chando Park ,  Sangmun Oh ,  Zheng Gao

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B2005/3996

Abstract: The present invention generally relates to a magnetic head having a thinner intermixing layer between a barrier layer and a magnetic layer. The method of making the magnetic head is also disclosed. The thinner intermixing layer in the magnetic head is formed by cooling the barrier layer in an atmosphere having a temperature of below 0 degrees Celsius prior to depositing the magnetic layer on the barrier layer. The thinner intermixing layer leads to a sharp interface between the barrier layer and the magnetic layer, which leads to an increased MR.

Abstract translation: 本发明一般涉及在阻挡层和磁性层之间具有较薄的混合层的磁头。 还公开了制造磁头的方法。 在将磁性层沉积在阻挡层上之前，通过在温度低于0摄氏度的气氛中将阻挡层冷却来形成磁头中较薄的混合层。 较薄的混合层导致阻挡层和磁性层之间的尖锐界面，这导致增加的MR。