公开(公告)号：US20190181248A1

公开(公告)日：2019-06-13

申请号：US16325981

申请日：2018-04-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Hongda SUN ,  Zhen SONG

IPC: H01L29/66 ,  H01L29/786

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

公开(公告)号：US20170117416A1

公开(公告)日：2017-04-27

申请号：US15037610

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Hongda SUN ,  Fengjuan LIU ,  Lungpao HSIN

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/24 ,  H01L29/225 ,  H01L29/227

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/10 ,  H01L29/1054 ,  H01L29/225 ,  H01L29/227 ,  H01L29/24 ,  H01L29/78696

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

公开(公告)号：US20160013060A1

公开(公告)日：2016-01-14

申请号：US14429279

申请日：2014-07-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangyong KONG ,  Hongda SUN

IPC: H01L21/283 ,  H01L29/66 ,  H01L21/311 ,  H01L29/45 ,  H01L27/32 ,  H01L29/51 ,  H01L29/423 ,  H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L21/283 ,  G02F2001/136295 ,  H01L21/31144 ,  H01L21/77 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/3244 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.

Abstract translation: 提供薄膜晶体管及其制造方法，阵列基板及其制造方法以及显示装置。 阵列基板包括：基底基板和设置在基底基板上的电极。 所述电极包括：在所述基底基板上的铝层或铝合金层; 以及布置在所述铝层或所述铝合金层上并且被配置为防止所述铝层或所述铝合金层产生小丘的第一阻挡层。 阵列基板可以消除在高温下形成在基底基板上的金属铝或铝合金产生小丘的不良现象。