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    Organic light emitting diode component and lamp
    21.
    发明授权
    Organic light emitting diode component and lamp 有权

    公开(公告)号：US10566563B2

    公开(公告)日：2020-02-18

    申请号：US15745017

    申请日：2017-07-21

    Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  CHENGDU BOE OPTOELECTRONICS TECHNOLOGY Co., LTD.

    Inventor： Dong Chen ,  Yinan Liang ,  Chao Kong

    IPC: H01L51/50 ,  C09K11/06 ,  H01L51/52 ,  H01L51/00

    Abstract: The present disclosure provides an organic light emitting diode component and a lamp containing the same, the organic light emitting diode component includes an organic light emitting diode, the organic light emitting diode includes an electron transport layer, an organic light emitting material layer and a hole transport layer, and the organic light emitting diode component further includes a magnetic field supply element, the magnetic field supply element supplies a magnetic field, in a case where the magnetic field supply element supplies the magnetic field, at least a part of the organic light emitting diode is located in the magnetic field, the electron transport layer of the organic light emitting diode includes a material with an electron mobility varying with changing of the magnetic field, and/or the hole transport layer of the organic light emitting diode includes a material with a hole mobility varying with changing of the magnetic field.

    Manufacturing method of mask plate assembly with colloid
    23.
    发明授权
    Manufacturing method of mask plate assembly with colloid 有权

    公开(公告)号：US10340455B2

    公开(公告)日：2019-07-02

    申请号：US15322140

    申请日：2016-02-25

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Can Zhang ,  Yinan Liang

    IPC: B05D7/14 ,  B29C65/00 ,  B29C65/78 ,  C23C14/04 ,  H01L51/00 ,  H01L51/56

    Abstract: The present disclosure provides a method for manufacturing a mask plate assembly, which includes providing a mask plate and a frame and securing the mask plate to the frame. The secured mask plate comprises a redundant portion extending out of the frame. The method further comprises removing at least a part of the redundant portion, and dispensing glue in a predetermined area of a surface of the mask plate, and curing the glue to form a colloid, wherein the colloid is higher than any other area on the surface of the mask plate where the colloid is not formed. The present disclosure further provides a mask plate assembly comprising a frame, and a mask plate secured to the frame, wherein a colloid is formed in a predetermined area of a surface of the mask plate, and the colloid is higher than any other area on the surface of the mask plate where the colloid is not formed. The present disclosure further provides an evaporation device and a method for manufacturing the display substrate.

    EVAPORATION METHOD AND EVAPORATION DEVICE
    25.
    发明申请
    EVAPORATION METHOD AND EVAPORATION DEVICE 审中-公开

    公开(公告)号：US20180066351A1

    公开(公告)日：2018-03-08

    申请号：US15322790

    申请日：2016-03-28

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Yinan Liang ,  Lujiang Huangfu

    IPC: C23C14/04 ,  C23C14/54

    CPC classification number: C23C14/042 ,  C23C14/24 ,  C23C14/54 ,  C23C14/545 ,  H01L51/00

    Abstract: There is disclosed an evaporation method, including: evaporating evaporation material and forming evaporation material particles towards one or more transfer substrates by means of an evaporation source, so as to form an intermediate material layer on a surface of the transfer substrate; heating the one or more transfer substrates to evaporate the intermediate material layer located on the transfer substrate towards a target substrate, a temperature of the heated transfer substrate being less than a temperature of the evaporation source. There is further disclosed an evaporation device.

    LOW TEMPERATURE POLYCRYSTALLINE SILICON TFT ARRAY SUBSTRATE AND METHOD OF PRODUCING THE SAME, DISPLAY APPARATUS
    27.
    发明申请
    LOW TEMPERATURE POLYCRYSTALLINE SILICON TFT ARRAY SUBSTRATE AND METHOD OF PRODUCING THE SAME, DISPLAY APPARATUS 有权
    低温多晶硅晶体管阵列基板及其制造方法，显示装置

    公开(公告)号：US20160268319A1

    公开(公告)日：2016-09-15

    申请号：US14769891

    申请日：2014-09-30

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Chunping Long ,  Yinan Liang ,  Zheng Liu ,  Zuqiang Wang ,  Xueyan Tian

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1288 ,  H01L27/1255 ,  H01L27/3262 ,  H01L2227/323

    Abstract: The present disclosure provides a low temperature polycrystalline silicon field effect TFT array substrate and a method for producing the same and a display apparatus. The method: using a stepped photo resist process to form a polycrystalline silicon active layer and a lower polar plate of a polycrystalline silicon storage capacitor simultaneously on a substrate in one lithographic process; forming a gate insulation layer on the polycrystalline silicon active layer and the lower polar plate of the polycrystalline silicon storage capacitor; forming a metal layer on the gate insulation layer and etching the metal layer to form a gate electrode and gate lines connected with the gate electrode, a source electrode, a drain electrode and data lines connected with the source electrode and the drain electrode; forming a passivation layer, a photo resist layer and a pixel electrode layer in sequence and patterning the passivation layer, the photo resist layer and the pixel electrode layer to form patterns of an interlayer insulation layer via hole and a pixel electrode in one lithographic process; forming a pixel definition layer on the pixel electrode. The present disclosure may reduce times of lithographic processes for the low temperature polycrystalline silicon field effect TFT array substrate, improve the yield and reduce the costs.

    Abstract translation: 本公开内容提供了一种低温多晶硅场效应TFT阵列基板及其制造方法和显示装置。 该方法：在一个光刻工艺中，使用阶梯式光刻胶工艺在衬底上同时形成多晶硅存储电容器的多晶硅有源层和下极板; 在多晶硅有源层和多晶硅储存电容器的下极板上形成栅极绝缘层; 在所述栅极绝缘层上形成金属层，并蚀刻所述金属层以形成与所述栅电极，源电极，漏电极以及与所述源电极和所述漏极连接的数据线连接的栅电极和栅极线; 依次形成钝化层，光致抗蚀剂层和像素电极层，并在一个光刻工艺中图案化钝化层，光致抗蚀剂层和像素电极层以形成层间绝缘层通孔和像素电极的图案; 在像素电极上形成像素定义层。 本公开可以减少低温多晶硅场效应晶体管阵列基板的光刻工艺的时间，提高产量并降低成本。

    Shift register, gate driving circuit and repairing method therefor, and display device
    28.
    发明授权
    Shift register, gate driving circuit and repairing method therefor, and display device 有权
    移位寄存器，门驱动电路及其修理方法及显示装置

    公开(公告)号：US09384686B2

    公开(公告)日：2016-07-05

    申请号：US14364176

    申请日：2013-05-22

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Yinan Liang

    IPC: G09G3/00 ,  G11C19/18 ,  G11C19/28 ,  G09G3/20

    CPC classification number: G09G3/007 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/08 ,  G11C19/184 ,  G11C19/28

    Abstract: A shift register (10), a gate driving circuit and a repairing method therefor, and a display device. The shift register (10) comprises a shift register module (21), a repairing module (22), a first connectable link (L1) arranged between the exciting signal input terminal (P100) of the shift register (10) and the exciting signal input terminals (P210, P220) of these two modules, and a second connectable link (L2) arranged between the output terminal (P101) of the shift register (10) and the output terminals (P211, P221) of these two modules; the shift register module (21) is configured to output a clock signal inputted at the first clock signal input terminal via its own output terminal (211) according to an exciting signal received at its own exciting signal input terminal (P210); the repairing module (22) is configured to output an exciting signal received at its own exciting signal input terminal (P220) after delaying the same by a half clock period via its own output terminal (P221) in a case in which a malfunction occurs in the shift register module (21). Since the shift register module (21) is replaced by the repairing module (22) in a case in which the shift register module (21) has a malfunction, the subsequent shift registers can operate properly.

    Abstract translation: 移位寄存器（10），门驱动电路及其修理方法以及显示装置。 移位寄存器（10）包括移位寄存器模块（21），修复模块（22），布置在移位寄存器（10）的激励信号输入端（P100）和激励信号之间的第一可连接链路（L1） 这两个模块的输入端子（P210，P220）和布置在移位寄存器（10）的输出端子（P101）和这两个模块的输出端子（P211，P221）之间的第二可连接链路（L2） 移位寄存器模块（21）被配置为根据在其自身的激励信号输入端子（P210）处接收的激励信号，经由其自身的输出端子（211​​）输出在第一时钟信号输入端子输入的时钟信号; 修理模块（22）被配置为在其发生故障的情况下经由其自身的输出端子（P221）将其自身的激励信号输入端子（P220）所接收的激励信号延迟半个时钟周期 移位寄存器模块（21）。 由于在移位寄存器模块（21）发生故障的情况下，由修理模块（22）替换移位寄存器模块（21），所以随后的移位寄存器可以正常工作。

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