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公开(公告)号：US10396186B2
公开(公告)日：2019-08-27
申请号：US15736799
申请日：2017-07-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo Chen , Quanhu Li , Jingang Fang
IPC: H01L29/66 , H01L21/443 , H01L21/4763 , H01L21/423 , H01L29/786 , H01L29/423 , H01L29/49 , H01L21/02 , H01L27/12 , H01L21/768 , H01L29/24 , H01L21/465 , H01L27/32
Abstract: A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.
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22.发明授权公开(公告)号：US10263115B2
公开(公告)日：2019-04-16
申请号：US15804016
申请日：2017-11-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo Chen , Youngsuk Song
IPC: H01L29/786 , H01L29/49 , H01L21/44 , H01L29/66 , H01L27/12
Abstract: A method for manufacturing a thin film transistor includes: providing a substrate having a first surface and a second surface which are opposed to each other; forming a metal layer on the first surface of the substrate and patterning the metal layer to form a source electrode and a drain electrode; forming a semiconductor layer on the metal layer; forming a first insulating area and a gate electrode on the semiconductor layer; forming a second insulating layer on the semiconductor layer and the gate electrode; and forming a source lead and a drain lead on the second insulating layer, wherein the source lead passes through the second insulating layer and the semiconductor layer and is coupled to the source electrode, and the drain lead passes through the second insulating layer and the semiconductor layer and is coupled to the drain electrode.
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公开(公告)号：US09437663B2
公开(公告)日：2016-09-06
申请号：US14785905
申请日：2015-03-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo Chen , Jun Cheng , Chunsheng Jiang , Baoxia Zhang
CPC classification number: H01L27/3272 , H01L27/12 , H01L27/322 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L51/5253 , H01L51/5262 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2251/303
Abstract: An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a pattern of an organic light-emitting layer (11); a pattern of an active layer (4a) located in a thin film transistor region and a pattern of an absorbing layer (4b) located in an open region, which are arranged in a same layer, wherein, the pattern of the absorbing layer (4b) is located in a light outgoing direction of the pattern of the organic light-emitting layer (11), and is made of a transparent material having an ultraviolet absorbing function. In this way, the pattern of the absorbing layer located in the open region can absorb ultraviolet light from outgoing light, so that damage to eyes caused by the outgoing light can be reduced; and the pattern of the active layer and the pattern of the absorbing layer are arranged in a same layer, which, as compared with a manner of separately arranging a layer of an ultraviolet absorbing layer in the array substrate, can reduce a thickness of the array substrate, which is conducive to lighting and thinning a display device.
Abstract translation: 提供阵列基板及其制造方法以及显示装置。 阵列基板包括：有机发光层（11）的图案; 位于薄膜晶体管区域中的有源层（4a）的图案和布置在同一层中的位于开放区域中的吸收层（4b）的图案，其中，吸收层（4b）的图案 ）位于有机发光层（11）的图案的光出射方向上，并且由具有紫外线吸收功能的透明材料制成。 以这种方式，位于开放区域中的吸收层的图案可以吸收出射光的紫外线，从而可以减少由出射光引起的对眼睛的损伤; 并且有源层的图案和吸收层的图案被布置在同一层中，与在阵列基板中分开布置一层紫外线吸收层的方式相比，可以减小阵列的厚度 衬底，这有利于照明和变薄显示装置。
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公开(公告)号：US20150214249A1
公开(公告)日：2015-07-30
申请号：US14353580
申请日：2013-06-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jun Cheng , Jiangbo Chen , Xiangyong Kong
IPC: H01L27/12 , H01L29/24 , H01L27/32 , H01L21/443 , H01L21/4763 , H01L29/786 , H01L29/66
CPC classification number: H01L27/1225 , H01L21/02565 , H01L21/02664 , H01L21/443 , H01L21/47635 , H01L27/1255 , H01L27/1259 , H01L27/3262 , H01L27/3265 , H01L29/24 , H01L29/66969 , H01L29/7869
Abstract: An array substrate, a display device and a manufacturing method. The array substrate includes a thin film transistor and a pixel electrode (9). The active layer (4) of the thin film transistor is formed by a first region (401) of the oxide semiconductor layer. The oxide semiconductor layer further includes a second region (402). The pixel electrode (9) and the second region (402) of the oxide semiconductor layer (9) are overlapped so as to form a storage capacitor. The second region (402) of the oxide semiconductor layer (9) constitutes a first electrode plate (402) of the storage capacitor; the pixel electrode (9) corresponding to the second region (402) of the oxide semiconductor layer (4) constitutes a second electrode plate (9) of the storage capacitor; and dielectric layers (7, 8) are disposed between the first electrode plate (402) and the second electrode plate (9).
Abstract translation: 阵列基板，显示装置及制造方法。 阵列基板包括薄膜晶体管和像素电极（9）。 薄膜晶体管的有源层（4）由氧化物半导体层的第一区域（401）形成。 氧化物半导体层还包括第二区域（402）。 氧化物半导体层（9）的像素电极（9）和第二区域（402）重叠以形成存储电容器。 氧化物半导体层（9）的第二区域（402）构成存储电容器的第一电极板（402） 与氧化物半导体层（4）的第二区域（402）对应的像素电极（9）构成存储电容器的第二电极板（9） 并且电介质层（7,8）设置在第一电极板（402）和第二电极板（9）之间。
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公开(公告)号：US20250093726A1
公开(公告)日：2025-03-20
申请号：US18577410
申请日：2023-02-16
Inventor： Jiangbo Chen , Zeyuan Li , Fanli Meng , Ji Peng , Hu Meng , Liye Duan
Abstract: An electronic printing system includes an imaging apparatus and an electronic paper that can be detached from each other and can be coupled together to perform one or more functionalities. The imaging apparatus includes a first electrode and a first passivation layer. The electronic paper includes a second electrode, an electro-optic layer on the second electrode, and a second passivation layer on a side of the electro-optic layer away from the second electrode. When the imaging apparatus and the electronic paper are coupled together, the first electrode, the first passivation layer, the second passivation layer, the electro-optic layer, and the second electrode are sequentially arranged in a stacked structure, the first electrode and the second electrode being configured to apply an electric field to the electro-optic layer. The first passivation layer and the second passivation layer can be detached from each other.
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Patent Agency Ranking
公开(公告)号：US20240274785A1
公开(公告)日：2024-08-15
申请号：US18022904
申请日：2022-04-14
Inventor： Jiangbo Chen , Fanli Meng , Qiuyun Tan , Zeyuan Li , Hu Meng , Wei Guo , Ding Ding
IPC: H01M4/04 , H01M4/139 , H01M10/058 , H01M50/105
CPC classification number: H01M4/0471 , H01M4/0404 , H01M4/0426 , H01M4/139 , H01M10/058 , H01M50/105
Abstract: Provided are a battery assembly and a manufacturing method thereof. the battery assembly includes: an anode unit, which includes an anode current collector and an anode on the anode current collector, an electrolyte layer on a side of the anode remote from the anode current collector; and a cathode unit on a side of the electrolyte layer remote from the anode; the battery assembly further includes: an interface layer formed at a contact interface between the anode current collector and the anode.
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公开(公告)号：US11948948B2
公开(公告)日：2024-04-02
申请号：US17406951
申请日：2021-08-19
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jiangbo Chen , Fanli Meng , Zeyuan Li , Yao Lu , Liye Duan , Yanzhao Li
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14614 , H01L27/14623 , H01L27/14659 , H01L27/14663
Abstract: A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.
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公开(公告)号：US11830895B2
公开(公告)日：2023-11-28
申请号：US17764435
申请日：2021-05-12
Applicant: BOE Technology Group Co., Ltd.
Inventor： Fanli Meng , Jiangbo Chen , Zeyuan Li
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14661
Abstract: The embodiments of the present disclosure provide a detection substrate and a ray detector, comprising a base substrate; a direct-conversion photosensitive device located on the base substrate; an indirect-conversion photosensitive device located between the base substrate and the layer where the direct-conversion photosensitive device is located; and a reading transistor located between the base substrate and the layer where the indirect-conversion photosensitive device is located. The reading transistor is electrically connected to the direct-conversion photosensitive device and the indirect-conversion photosensitive device respectively.
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29.发明授权公开(公告)号：US11735611B2
公开(公告)日：2023-08-22
申请号：US17355664
申请日：2021-06-23
Applicant: BOE Technology Group Co., Ltd.
Inventor： Fanli Meng , Jiangbo Chen , Zeyuan Li
IPC: H01L27/146 , H01L29/786 , G01T1/20
CPC classification number: H01L27/14616 , G01T1/2018 , H01L27/14603 , H01L27/14659 , H01L27/14663 , H01L27/14689 , H01L29/7869 , H01L29/78633 , H01L29/78666
Abstract: A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.
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公开(公告)号：US11604291B2
公开(公告)日：2023-03-14
申请号：US17352962
申请日：2021-06-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zeyuan Li , Jiangbo Chen , Fanli Meng
IPC: G01T1/24 , H01L27/146 , H04N5/341
Abstract: The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.
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